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WO/2024/077811A1 |
Embodiments of the present disclosure provide an intermediate chip, and a processing method for a chip stacked package. The intermediate chip has a front surface and a back surface which are opposite to each other, the front surface of t...
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WO/2024/081473A1 |
Examples are disclosed relate to using an inhibitor with a silicon oxide ALD deposition process to refill recesses in STI regions. One example provides a method of processing a substrate. The method comprises depositing an inhibitor on t...
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WO/2024/081253A1 |
Disclosed herein are systems and methods for reducing startup time of an equipment front end module (EFEM). The EFEM may include an EFEM chamber formed between a plurality of walls, an upper plenum above the EFEM chamber, the upper plenu...
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WO/2024/078335A1 |
Disclosed are a semiconductor structure manufacturing method, and a semiconductor structure. The semiconductor structure manufacturing method comprises: providing a substrate; forming a protective layer in a first region of the substrate...
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WO/2024/078510A1 |
The present disclosure relates to a wafer system, a preparation method, a processing method, a power supply method, a device and a medium. The wafer system comprises at least one wafer processing apparatus and an auxiliary function appar...
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WO/2024/079610A2 |
Described herein is a method of aging a wet gel material. The method comprises aging a wet gel material by heating the wet gel material in an aging fluid at an aging temperature above the normal boiling point of the aging fluid. This is ...
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WO/2024/080180A1 |
This liquid material vaporizer comprises: a gas-liquid mixing section that mixes a liquid material and a carrier gas to generate a gas-liquid mixture; a carrier gas supply channel that supplies the carrier gas to the gas-liquid mixing se...
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WO/2024/080237A1 |
Provided is a siloxane compound that can be used as a siloxane-containing film precursor with which it is possible, in the formation of a silicon-containing film, to form a film by atomic layer deposition (ALD) even in high-temperature c...
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WO/2024/079996A1 |
The present invention relates to a method for producing a bonded light-emitting element wafer having removed therefrom a defective part, the method being characterized by comprising: a step in which a light-emitting element structure tha...
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WO/2024/079979A1 |
A wiring according to the present disclosure comprises a plurality of divided wirings through which AC current flows. The number of divided wirings is 4 or greater. If Sp denotes the inter-wiring space between two adjacent divided wiring...
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WO/2024/080833A1 |
The present invention provides a slurry composition for chemical mechanical polishing and a manufacturing method therefor, wherein the slurry composition is capable of achieving a high polishing rate for low dielectric constant films rel...
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WO/2024/077874A1 |
Disclosed in the present invention is a selective etching solution for a 3D NAND structural sheet of silicon nitride/silicon oxide; and the etching solution comprises a silane coupling agent, phosphoric acid, and water. The etching solut...
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WO/2024/079111A1 |
The invention consists of a device for holding, positioning and/or moving an object in a vacuum and comprises a base, an end effector having a substrate holder, a linear drive coupled to the end effector via a carriage, optionally a vert...
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WO/2024/080013A1 |
The present invention is a bonding defect removal method for a bonded wafer that is bonded to a transparent substrate by curing a thermosetting bonding member, said bonded wafer having a light-emitting element structure that has an activ...
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WO/2024/080253A1 |
The present disclosure relates to a method for producing a semiconductor device, the method comprising: a resin film formation step in which a resin film is formed on a semiconductor wafer, the resin film containing a resin that is decre...
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WO/2024/077768A1 |
A memory and a manufacturing method therefor. The memory comprises a plurality of transistors, and further comprises: a substrate (40); a plurality of silicon pillars (10), which correspond to the plurality of transistors on a one-to-one...
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WO/2024/079575A1 |
Provided is a semiconductor device having a novel configuration. This semiconductor device has: a first element layer having a bit line drive circuit; a second element layer having a first switch circuit, a first memory cell, and first w...
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WO/2024/081509A1 |
Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing p...
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WO/2024/050912A9 |
An apparatus and method for extracting an electron microscope sample. The apparatus comprises a body (1), a needle tube (2), and a first pressure adjustment mechanism (3). The body (1) is provided with a first channel (12) and a liquid s...
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WO/2024/081194A1 |
A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl c...
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WO/2024/077908A1 |
The present application relates to the technical field of chip packaging, and discloses a co-packaged optics structure and a manufacturing method therefor. The method comprises: providing a redistributed layer which is integrated with an...
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WO/2024/077827A1 |
The present disclosure relates to a semiconductor structure preparation method and a semiconductor structure. The semiconductor structure preparation method comprises: providing a substrate; according to a preset rule, forming, on the su...
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WO/2024/081453A1 |
Novel high purity dimethylaluminium chloride compositions are provided that are suitable for semiconductor applications, such as atomic layer etch and aluminum ion implantation. The reduction or minimization of specified gaseous impuriti...
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WO/2024/078682A1 |
The disclosure relates to a build-up substrate (110) for a power package (100). The build-up substrate (110) comprises an electrically insulating layer (120) and a plurality of electrically conductive pads (131a-e) encapsulated in the el...
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WO/2024/080148A1 |
Provided is a method for manufacturing a semiconductor device , the method involving: using a semiconductor element to be inspected as a first semiconductor element, and using a semiconductor element for acquiring teaching data as a seco...
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WO/2024/077586A1 |
The present invention relates to a machining control method for a semiconductor device, and a high-energy particle beam lithography device. The method comprises: by means of a pixel point recognition policy, recognizing, from an i-th lay...
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WO/2024/077761A1 |
A heat dissipation apparatus used in a gas-liquid mixed medium and a preparation method therefor, relating to the field of heat dissipation. The heat dissipation apparatus comprises a heat dissipation plate and a plurality of supporting ...
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WO/2024/081183A1 |
A substrate processing chamber includes a pedestal and a baffle. The pedestal is arranged in the substrate processing chamber. The pedestal includes a base portion and a stem portion. The base portion is greater in diameter than the stem...
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WO/2024/078665A1 |
A method according to the invention for applying an adhesive layer (28) to a module-carrier tape (12) provided with a multiplicity of chip modules (8) comprises the following steps, with surfaces (14) of the chip modules (8) being raised...
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WO/2024/078079A1 |
The present invention relates to the technical field of semiconductor accessory manufacturing, and provides a semiconductor device assembly and a preparation method therefor and the use thereof. The semiconductor device assembly comprise...
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WO/2024/078830A1 |
Disclosed herein are embodiments that relate to an electrostatic wafer clamps and methods for forming and modifying electrode structures for electrostatic wafer clamps. Wafer clamps include electrode structures in a dielectric layer with...
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WO/2024/077552A1 |
Disclosed in the present application are a 3D stacked packaging structure and a manufacturing method therefor. The 3D stacked packaging structure comprises a bottom-layer structure and a top-layer structure, wherein the top-layer structu...
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WO/2024/079116A1 |
Device for conveying a wafer-shaped article, comprising: a support having a support surface; one or more gas channels in the support having one or more outlets in the support surface; and one or more grooves in the support surface for re...
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WO/2024/077714A1 |
Embodiments of the present disclosure relate to the field of semiconductors, and provide a manufacturing method for a semiconductor structure, and a structure thereof. The manufacturing method for a semiconductor structure comprises: pro...
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WO/2024/078142A1 |
An online characterization method for a multi-junction solar cell comprises: by means of irradiating a multi-junction solar cell by using at least one characteristic light corresponding to subcells of the multi-junction solar cell so as ...
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WO/2024/080022A1 |
[Problem] To adjust energy of only ions of a specific type that are included in plasma. [Solution] This plasma treatment device comprises: a first electrode and a second electrode that face the inside of a treatment container which accom...
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WO/2024/079791A1 |
A surface inspecting device (1) according to the present invention comprises: a plate-shaped sample holding member (3) capable of holding a sample (2); a rotation drive unit (19) for rotating the sample holding member (3); a supporting m...
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WO/2024/080531A1 |
The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to a plasma-resistant glass, an...
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WO/2024/079880A1 |
This wafer stage 10 is provided with: a ceramic plate 20 which is provided, on the upper surface thereof, with at least a wafer stage part 22; a cooling plate 30 which is bonded to the lower surface of the ceramic plate 20, and has a coo...
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WO/2024/078073A1 |
Disclosed in the present disclosure are a semiconductor device, and a manufacturing method therefor. The semiconductor device comprises: a substrate, a buffer layer, a channel layer and a barrier layer which are stacked successively; a c...
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WO/2024/078125A1 |
A composite trench-type Schottky diode device and a fabrication method therefor. The device comprises a substrate (201), an epitaxial layer (202), a trench structure array (203), a Schottky metal layer (204), a front metal electrode laye...
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WO/2024/078946A1 |
Device comprising: a surface for supporting a wafer; a gas inlet in the surface; a plurality of suction devices for gripping the wafer above the surface and drawing or pulling the wafer towards the surface; a shared vacuum line in fluid ...
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WO/2024/078883A1 |
In a method to obtain information to control a manufacturing process for a stacked semiconductor device including several semiconductor layers requiring electrically interconnection, sample data of a semiconductor device sample to be ins...
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WO/2024/080249A1 |
The present disclosure relates to a resin film-forming material comprising a compound A that includes two or more first groups and has an ester bond and a compound B that includes two or more second groups capable of forming a bond with ...
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WO/2024/081210A1 |
Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a process chamber configured to process a substrate, a substrate support comprising a heat sink configur...
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WO/2024/079851A1 |
A semiconductor memory device according to an embodiment of the present invention includes: a first chip including a first pillar having a first memory cell and a second memory cell connected in series; a second chip including a second p...
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WO/2024/080189A1 |
Provided is a top ring with which it is possible to improve uniformity of polishing.　This top ring for holding a substrate comprises: a base member connected to a rotary shaft; a substrate suctioning member including a porous member ha...
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WO/2024/078175A1 |
Disclosed are a gas distributor, a gas delivery apparatus, and a film processing apparatus thereof. The gas distributor comprises a first surface and a second surface, which are oppositely disposed; a gas diffusion channel is provided in...
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WO/2024/079975A1 |
This device for manufacturing a semiconductor device (10) comprises a reference jig (40) larger than a semiconductor chip (60), and a mounting tool (15) that individually suctions and transfers the semiconductor chip (60) and the referen...
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WO/2024/077803A1 |
A method for preparing a semiconductor device. The method comprises: providing a substrate, wherein the substrate is provided with a first-type well region and a second-type well region; performing first ion doping, forming a second-type...
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