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Title:
SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/078335
Kind Code:
A1
Abstract:
Disclosed are a semiconductor structure manufacturing method, and a semiconductor structure. The semiconductor structure manufacturing method comprises: providing a substrate; forming a protective layer in a first region of the substrate; forming a gate oxide layer in a second region of the substrate, and oxidizing the protective layer into an oxide layer during the process of forming the gate oxide layer.

Inventors:
HU MINRUI (CN)
TANG YI (CN)
Application Number:
PCT/CN2023/121918
Publication Date:
April 18, 2024
Filing Date:
September 27, 2023
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/28; H01L29/423; H10B12/00
Foreign References:
CN115547819A2022-12-30
CN115084178A2022-09-20
US20020022357A12002-02-21
CN110164865A2019-08-23
CN112382612A2021-02-19
CN107045981A2017-08-15
KR20030086836A2003-11-12
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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