Title:
MEMORY AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/077768
Kind Code:
A1
Abstract:
A memory and a manufacturing method therefor. The memory comprises a plurality of transistors, and further comprises: a substrate (40); a plurality of silicon pillars (10), which correspond to the plurality of transistors on a one-to-one basis, wherein the silicon pillars (10) are located on the substrate (40), the plurality of silicon pillars (10) are arranged at intervals in a row direction and a column direction, a trench (60) is provided between every two adjacent columns of the silicon pillars (10), a plurality of recesses (50') are provided between every two adjacent trenches (60), and each recess (50') is located in the substrate (40) between two silicon pillars (10) that are adjacent in the column direction, and extends in the substrate (40) towards a region below the two silicon pillars (10) that are adjacent in the column direction; a plurality of bit lines (20), which extend in the column direction and are arranged at intervals in the row direction, wherein each bit line (20) is located in one column of recesses (50') and is connected to the bottoms of the silicon pillars (10), and the bit lines (20) are metal lines; and isolation layers (30), each isolation layer (30) being located between the bit line (20) and an inner wall of the recess (50'), and being in contact with at least part of the region of the substrate (40). The substrate (40) is a monocrystalline silicon substrate, the silicon pillars (10) are monocrystalline silicon pillars, and the isolation layers (30) are amorphous silicon or polycrystalline silicon film layers.
Inventors:
TIAN CHAO (CN)
PING YANLEI (CN)
ZHOU JUN (CN)
PING YANLEI (CN)
ZHOU JUN (CN)
Application Number:
PCT/CN2022/140175
Publication Date:
April 18, 2024
Filing Date:
December 19, 2022
Export Citation:
Assignee:
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
CXMT CORP (CN)
CXMT CORP (CN)
International Classes:
H01L21/768
Foreign References:
| CN109860105A | 2019-06-07 | |||
| CN109273456A | 2019-01-25 | |||
| CN107946193A | 2018-04-20 |
Attorney, Agent or Firm:
AFD CHINA INTELLECTUAL PROPERTY LAW OFFICE (CN)
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