METHOD FOR PRODUCING BONDED LIGHT-EMITTING ELEMENT WAFER

WIPO Patent Application WO/2024/079996

A1

The present invention relates to a method for producing a bonded light-emitting element wafer having removed therefrom a defective part, the method being characterized by comprising: a step in which a light-emitting element structure that is to become a micro LED, and a substrate to be bonded, which is transparent with respect to an LLO transfer laser beam, are bonded to each other by an adhesive which absorbs the LLO transfer laser beam, thereby obtaining a bonded wafer; a step in which the bonded wafer is optically examined for defective parts so as to form map data for removal; and a step in which, on the basis of the map data for removal, a defective part in the bonded wafer is irradiated with a laser beam for removal, a portion of the light-emitting element structure included in the defective part is sublimated, and thereby, the portion of the light-emitting element structure included in the defective part is removed and a bonded light-emitting element wafer is obtained. Accordingly, the present invention provides a method for producing a bonded light-emitting element wafer, the method being capable of producing a bonded light-emitting element wafer by selectively removing a defective part of a light-emitting element structure which is to become a micro LED and is bonded to a bonding-subject wafer by an adhesive.

ISHIZAKI JUNYA (JP)

PCT/JP2023/030243

April 18, 2024

August 23, 2023

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SHINETSU HANDOTAI KK (JP)

H01L33/00; B23K26/36; H01L21/02; H01L21/304; H01L33/08

US20210048473A1	2021-02-18
JP2009021572A	2009-01-29
JP2008527719A	2008-07-24
JP2019040192A	2019-03-14
US20180374738A1	2018-12-27
JP2014222221A	2014-11-27
JP2017104908A	2017-06-15

YOSHIMIYA Mikio et al. (JP)

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