Title:
3D STACKED PACKAGING STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/077552
Kind Code:
A1
Abstract:
Disclosed in the present application are a 3D stacked packaging structure and a manufacturing method therefor. The 3D stacked packaging structure comprises a bottom-layer structure and a top-layer structure, wherein the top-layer structure is stacked on the bottom-layer structure. Each of the bottom-layer structure and the top-layer structure comprises: a substrate layer; a diamond layer; which is grown on the substrate layer; a silicon wafer layer subjected to ion implantation, said silicon wafer layer being attached to the diamond layer; and a device layer, which is arranged on the silicon wafer layer. The substrate layer, the diamond layer, said silicon wafer layer, and the device layer are laminated together in sequence, and the substrate layer of the top-layer structure is in contact with the device layer of the bottom-layer structure. Through holes are provided between the bottom-layer structure and the top-layer structure, extend through the device layer, said silicon wafer layer, the diamond layer and the substrate layer of the top-layer structure, and extend through the device layer of the bottom-layer structure. The through holes are filled with an electrically conductive material.
Inventors:
CUI YINHUA (CN)
ZHENG WEI (CN)
WANG YAO (CN)
CHEN ZHIKUAN (CN)
HU CHUAN (CN)
CHEN ZHITAO (CN)
WANG CHANG'AN (CN)
ZHENG WEI (CN)
WANG YAO (CN)
CHEN ZHIKUAN (CN)
HU CHUAN (CN)
CHEN ZHITAO (CN)
WANG CHANG'AN (CN)
Application Number:
PCT/CN2022/125156
Publication Date:
April 18, 2024
Filing Date:
October 13, 2022
Export Citation:
Assignee:
INST OF SEMICONDUCTORS GUANGDONG ACADEMY OF SCIENCES (CN)
International Classes:
H01L23/52; H01L21/768
Domestic Patent References:
| WO2022027222A1 | 2022-02-10 |
Foreign References:
| US20130093091A1 | 2013-04-18 | |||
| CN114823576A | 2022-07-29 | |||
| CN107492533A | 2017-12-19 | |||
| US20050046002A1 | 2005-03-03 |
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
Download PDF: