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WO/2024/091914A1 |
An apparatus, system and method for a substrate flipper capable of accommodating substrates of varying sizes. The apparatus, system and method may include a base housing providing a rotating feature extending outwardly from the base hous...
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WO/2024/088555A1 |
The disclosure relates to a semiconductor package (100) comprising: an integrated circuit (140) comprising at least one first connection terminal (141) and at least one second connection terminal (143); an encapsulant (150) encapsulating...
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WO/2024/089570A1 |
Provided is a new semiconductor device. This semiconductor device has: a memory cell circuit having a first transistor and a capacitive element; and a read-out circuit having a second transistor and a third transistor. An element layer i...
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WO/2024/090475A1 |
This substrate treatment device (100) comprises a chamber (201), a fan mechanism (3), a substrate holding unit (4), a substrate rotating unit (5), a first liquid mixture discharging unit (6), and a first super-heated steam blowing unit (...
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WO/2024/087955A1 |
A semiconductor device and a manufacturing method therefor, the semiconductor device comprising: a substrate (1); a semiconductor layer (2) provided on the substrate (1) and comprising a first semiconductor lamination layer and a second ...
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WO/2024/087109A1 |
An array substrate, a display panel, a display device, and a manufacturing method for an array substrate. The array substrate comprises: a base substrate (10); a plurality of data signal lines (20) provided on the base substrate (10); a ...
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WO/2024/091102A1 |
Provided are cerium oxide particles for chemical-mechanical polishing and a slurry composition for chemical-mechanical polishing comprising same. By means of a combination of cerium oxide particles, the characteristic of the present inve...
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WO/2024/087541A1 |
Disclosed in embodiments of the present disclosure are a manufacturing method for a semiconductor structure, a semiconductor structure, and a memory. The method comprises: providing a substrate, a metal layer and a sacrificial layer bein...
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WO/2024/088332A1 |
The present application relates to the technical field of communication devices, and discloses a chip assembly, an electronic device, and a manufacturing method for a chip assembly. The chip assembly comprises a wiring layer, a chip, at ...
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WO/2024/091395A1 |
Implementations of the present disclosure relate to apparatus, systems, and methods of using a transfer chamber. In one or more implementations, gaseous impurities are reduced in a transfer chamber. In one implementation, a method includ...
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WO/2024/087905A1 |
The present application relates to the technical field of printing. Provided are a laser transfer printing method and device, and a solar cell. The laser transfer printing method comprises: providing a transfer printing medium, and arran...
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WO/2024/091543A1 |
A molybdenum silicide layer is formed on a bottom surface in a recessed feature in a silicon or silicon-germanium substrate. The bottom surface may be a silicon or silicon-germanium. A first molybdenum layer may be deposited on or over t...
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WO/2024/087199A1 |
A display substrate and a display apparatus, which relate to the technical field of display. The display substrate comprises a plurality of display units separated from each other, and a plurality of connecting units. Each of the connect...
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WO/2024/091413A1 |
Methods for selectively depositing an epitaxial layer are provided. In some implementations, the selective epitaxial deposition process includes providing the co-flow of chlorosilane precursors with at least one of an antimony-containing...
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WO/2024/087189A1 |
Disclosed in the present application are an anti-radiation field effect transistor device and application thereof in an anti-radiation environment, which are used for solving the problem in the prior art of an anti-radiation method for a...
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WO/2024/091302A1 |
A semiconductor structure includes a stack of alternating doped semiconductor epitaxial layers and cap epitaxial layers formed on a substrate. Each doped semiconductor epitaxial layer includes silicon having carrier dopants, and each cap...
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WO/2024/091304A1 |
An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. Th...
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WO/2024/090384A1 |
Provided is a technology by which a chemical can be effectively fixed to the surface of a substrate. A substrate treatment device 1 comprises: an activating device 40 configured so that, in a state where a liquid is supplied to a surfa...
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WO/2024/087780A1 |
Disclosed in the embodiments of the present disclosure are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate, which comprises a core region and a stepped region; at least on...
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WO/2024/087373A1 |
A bonding structure and a manufacturing method therefor. The bonding structure comprises a first structural portion and a second structural portion. The first structural portion comprises a first base portion and a first connecting porti...
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WO/2024/089920A1 |
This method is for selecting abrasive grains containing cerium, and involves selecting the abrasive grains on the basis of the average positron lifetime as measured by a positron annihilation method. Abrasive grains according to the pres...
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WO/2024/090473A1 |
In the present invention a substrate-processing device (100) comprises a chamber (201); a substrate-holding unit (3), a processing-space-forming part (70), a substrate-rotating unit (4); a processing-liquid-supplying unit (600), and a su...
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WO/2024/091528A1 |
Embodiments of process kits for use in a substrate process chamber are provided herein. A process kit for a substrate process chamber including: a cover ring configured to extend over unprotected dicing tape of a tape frame substrate dur...
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WO/2024/087320A1 |
The present disclosure relates to the technical field of semiconductors, and provides a method for forming a semiconductor structure and a semiconductor structure. The method for forming a semiconductor structure comprises: providing a l...
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WO/2024/087394A1 |
The embodiments of the present disclosure relate to the field of semiconductors. Provided are a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure comprises: a substrate, which...
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WO/2024/087403A1 |
Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method therefor, and a storage system. The semiconductor structure comprises: a substrate; a dielectric layer, located on the substrate; conducti...
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WO/2024/087677A1 |
The present application provides a single diffusion break apparatus, which comprises: a first single diffusion break unit of a P-type metal oxide semiconductor and a second single diffusion break unit of an N-type metal oxide semiconduct...
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WO/2024/087466A1 |
Disclosed are a semiconductor structure, and a manufacturing method for the semiconductor structure. The semiconductor structure comprises: a substrate, a conductive through hole, a contact layer and an isolation layer. The conductive th...
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WO/2024/091319A1 |
A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and af...
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WO/2024/091487A1 |
Disclosed is a technique for transporting and arranging electronic components, using an optical system utilizing a laser beam to produce an optical trap in a fluid near a target site of a backplate, where a primary optical axis of the la...
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WO/2024/091977A1 |
Methods and apparatus for transient protection of a sensitive surface of a substrate are described. Methods that facilitate transient protection of a sensitive surface of substrate include depositing a sacrificial capping layer on a sens...
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WO/2024/089921A1 |
Provided is a selection method for abrasive grains, wherein the abrasive grains contain cerium and the abrasive grains are selected on the basis of the crystallite diameter thereof. Also provided are abrasive grains containing cerium and...
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WO/2024/089742A1 |
A control unit of the present invention (a substrate processing device which performs processing of removing a coating attached to a substrate) processes a substrate (W) by supplying an ozone gas into a chamber (32) in a state where a fi...
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WO/2024/091688A1 |
Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a blocking layer of molecules is used to achieve selective epitaxial deposition. In one implementation, a method of proc...
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WO/2024/087773A1 |
A three-side conveyor equipment for silicon wafers is provided, including an insertion container. A bottom conveyor belt and two side conveyor belts are arranged in the insertion container, the two side conveyor belts are arranged opposi...
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WO/2024/091601A1 |
The present disclosure generally relates to methods for forming silicon nitride layers and silicon nitride structures on substrates. In an embodiment, the method includes positioning a substrate having at least one feature thereon in a p...
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WO/2024/089182A1 |
The invention relates to a piezoelectric-on-insulator (POI) substrate (130) comprising a carrier substrate (100) comprising a trapping layer (102) on a free surface (104) of the carrier substrate (100), a piezoelectric layer (106), an in...
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WO/2024/090433A1 |
Provided are an information processing method, a computer program, and an information processing device that can be expected to effectively use data obtained from a target device. In an information processing method according to an embod...
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WO/2024/091424A1 |
Methods and systems measuring structural parameters characterizing a measurement target based on changes in measurement signal values and estimated changes in electrical properties, optical properties, or both, of the measurement target ...
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WO/2024/087334A1 |
Provided in the present invention are an interposer structure and a manufacturing method therefor. The manufacturing method comprises: providing a substrate; forming first open holes, and filling the first open holes with first conductiv...
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WO/2024/091478A1 |
Method of forming a semiconductor device are provided, In some implementations, the method includes positioning a substrate into a processing chamber, the substrate having an exposed non-crystalline surface and an exposed crystalline sur...
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WO/2024/086970A1 |
The present invention provides a fan-out type package structure and a preparation method therefor. The fan-out type package structure may comprise an encapsulation layer, and an antenna radio frequency module assembly and one or more ele...
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WO/2024/090268A1 |
This film formation method comprises the following (A) to (C): (A) a substrate is prepared, which has, in different regions of the surface thereof, a first film and a second film formed from a different material than the first film; (B) ...
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WO/2024/091105A1 |
Provided are: cerium oxide particles for chemical mechanical polishing; and a slurry composition for chemical mechanical polishing comprising same. Provided are: a slurry composition for chemical mechanical polishing that can significant...
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WO/2024/087063A1 |
A display substrate and a manufacturing method therefor, and a display device. The display substrate comprises a base structure layer; the base structure layer comprises a base material layer, a sacrificial layer, and an optical film lay...
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WO/2024/087620A1 |
Provided in the present disclosure are a preparation method for a solar cell, and a solar cell. The preparation method for the solar cell comprises the following steps: preparing a barrier layer (114) on a transparent conductive film (11...
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WO/2024/090403A1 |
Conventionally, it was not possible to obtain a conductive pillar module that is for manufacturing a semiconductor, that can be used for laying a secondary wiring on a substrate of a flip chip package and forming a redistribution layer (...
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WO/2024/088494A1 |
The disclosure relates to a semiconductor package (100) comprising an electronic chip (140);an encapsulant (150) encapsulating at least part of the at least one electronic chip (140); a first metal layer (110) placed upon at least one of...
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WO/2024/090212A1 |
This method for manufacturing a member having a gas flowpath includes: preparing a metal material inside of which a gas flowpath has been formed; and forming an anti-corrosion film on the inner surface of the gas flowpath using atomic la...
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WO/2024/091396A1 |
An apparatus includes a vacuum chamber, a first component, a second component that is movable relative to the first component, and a gas injector. The vacuum chamber includes a first vacuum zone and a second vacuum zone. The first compon...
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