Title:
ANTI-RADIATION FIELD EFFECT TRANSISTOR DEVICE AND APPLICATION THEREOF IN ANTI-RADIATION ENVIRONMENT
Document Type and Number:
WIPO Patent Application WO/2024/087189
Kind Code:
A1
Abstract:
Disclosed in the present application are an anti-radiation field effect transistor device and application thereof in an anti-radiation environment, which are used for solving the problem in the prior art of an anti-radiation method for a field effect transistor being limited. The field effect transistor device comprises: a substrate; a spacer arranged on the substrate; and a semiconductor stack arranged on the spacer. The semiconductor stack comprises: an active layer arranged on the spacer, wherein the active layer comprises a source region, a drain region and a channel region that is located between the source region and the drain region; and a gate structure, which is fitted with the active layer, wherein in the direction perpendicular to the substrate, the spacer is arranged around the semiconductor stack, the spacer comprises an electric field adjustment portion which intrudes into the channel region in a thickness direction of the active layer, and the electric field adjustment portion runs through the channel region in a width direction of the active layer.
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Inventors:
WANG MINGXIANG (CN)
XU HUIFANG (CN)
ZHOU GUOAO (CN)
ZHANG DONGLI (CN)
WANG HUAISHENG (CN)
XU HUIFANG (CN)
ZHOU GUOAO (CN)
ZHANG DONGLI (CN)
WANG HUAISHENG (CN)
Application Number:
PCT/CN2022/128338
Publication Date:
May 02, 2024
Filing Date:
October 28, 2022
Export Citation:
Assignee:
UNIV SOOCHOW (CN)
International Classes:
H01L29/78; H01L21/762; H01L23/552
Foreign References:
| CN102610644A | 2012-07-25 | |||
| CN114823860A | 2022-07-29 | |||
| CN1779989A | 2006-05-31 | |||
| CN113035716A | 2021-06-25 | |||
| CN102194827A | 2011-09-21 | |||
| US20110204444A1 | 2011-08-25 |
Attorney, Agent or Firm:
SUZHOU 3IN INTELLECTUAL PROPERTY AGENT CO., LTD. (CN)
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