Title:
Power semiconductor device
Document Type and Number:
Japanese Patent JP6334655
Kind Code:
B2
Abstract:
A power semiconductor device includes a substrate (2), a main body (3), and an electrode unit (4). The main body (3) includes an active portion (31) disposed on the substrate (2), an edge termination portion (32), and an insulating layer (34) disposed on the edge termination portion (32) . The edge termination portion (32) includes a first-type semiconductor region (321), a second-type semiconductor region (321) and a top surface (320). The first-type semiconductor region (321) is adjacent to the active portion (31) and has a first-type doping concentration decreased from the top surface (320) toward the substrate (2). The electrode unit (4) includes a first electrode (41) disposed on the insulating layer (34), and a second electrode (42) disposed on the substrate (2).
Inventors:
Juan Qi Fan
Lee Khun Yen
Chun Cheer Fei
One Chung
Lee Khun Yen
Chun Cheer Fei
One Chung
Application Number:
JP2016226847A
Publication Date:
May 30, 2018
Filing Date:
November 22, 2016
Export Citation:
Assignee:
Joushun Technology Co., Ltd.
International Classes:
H01L29/06; H01L21/336; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| JP2012160752A | ||||
| JP2008187125A | ||||
| JP2011049393A | ||||
| JP2012164854A | ||||
| JP2012104577A | ||||
| JP2007173418A |
Foreign References:
| WO2013132568A1 | ||||
| US20130181280 | ||||
| US20100001344 |
Attorney, Agent or Firm:
Atsushi Aoki
Jun Tsuruta
Tomohiro Minamiyama
Akira Kawai
Kenichi Nakamura
Yuichi Sakai
Jun Tsuruta
Tomohiro Minamiyama
Akira Kawai
Kenichi Nakamura
Yuichi Sakai