Title:
FIELD EFFECT TRANSISTOR DEVICE HAVING BLOCKING REGION
Document Type and Number:
WIPO Patent Application WO/2024/087188
Kind Code:
A1
Abstract:
Disclosed in the present application is a field effect transistor device having a blocking region, which device is used for alleviating the problem in the prior art of a short-channel effect of a field effect transistor. The field effect transistor device comprises an active layer, wherein the active layer comprises a source region, a drain region and a channel region that is located between the source region and the drain region, and a carrier blocking region is provided in the channel region; and when the device is turned off, the carrier blocking region is used for blocking carriers moving from the source region to the drain region.
Inventors:
WANG MINGXIANG (CN)
XU HUIFANG (CN)
ZHOU GUOAO (CN)
ZHANG DONGLI (CN)
WANG HUAISHENG (CN)
XU HUIFANG (CN)
ZHOU GUOAO (CN)
ZHANG DONGLI (CN)
WANG HUAISHENG (CN)
Application Number:
PCT/CN2022/128337
Publication Date:
May 02, 2024
Filing Date:
October 28, 2022
Export Citation:
Assignee:
UNIV SOOCHOW (CN)
International Classes:
H01L29/78; H01L29/10
Foreign References:
| CN113363323A | 2021-09-07 | |||
| US6538284B1 | 2003-03-25 |
Attorney, Agent or Firm:
SUZHOU 3IN INTELLECTUAL PROPERTY AGENT CO., LTD. (CN)
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