Title:
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/087320
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors, and provides a method for forming a semiconductor structure and a semiconductor structure. The method for forming a semiconductor structure comprises: providing a layer to be etched; forming a first mask material layer on said layer; performing at least two patterning processes on the first mask material layer, so as to form at least two mask patterns in the first mask material layer, the at least two mask patterns being independently arranged, and the first mask material layer being formed as a first mask layer; and, according to the first mask layer, etching the layer to be etched, and transferring the at least two mask patterns into the layer to be etched.
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Inventors:
YANG QIAN (CN)
Application Number:
PCT/CN2022/136225
Publication Date:
May 02, 2024
Filing Date:
December 02, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/308; H01L21/32; H01L21/3213; H10B12/00
Foreign References:
| US8916475B1 | 2014-12-23 | |||
| US20080076075A1 | 2008-03-27 | |||
| CN114068310A | 2022-02-18 | |||
| CN110911272A | 2020-03-24 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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