Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/087394
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to the field of semiconductors. Provided are a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure comprises: a substrate, which is internally provided with conductive vias and contact layers, wherein the conductive vias are electrically connected to the contact layers, the conductive vias and the contact layers extend and are arranged in a first direction, each contact layer comprises at least a non-closed bending portion, and the section of the non-closed bending portion in a direction that is perpendicular to the first direction is in the shape of a bending line; and isolation layers, which are located in the substrate and cover side walls of the contact layers. The embodiments of the present disclosure can at least improve the performance of the semiconductor structure.
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Inventors:
WU LIN (CN)
Application Number:
PCT/CN2023/070536
Publication Date:
May 02, 2024
Filing Date:
January 04, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/538; H01L21/768
Foreign References:
| CN101582407A | 2009-11-18 | |||
| CN110301044A | 2019-10-01 | |||
| CN106992163A | 2017-07-28 | |||
| US20130187280A1 | 2013-07-25 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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