Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2024/087541
Kind Code:
A1
Abstract:
Disclosed in embodiments of the present disclosure are a manufacturing method for a semiconductor structure, a semiconductor structure, and a memory. The method comprises: providing a substrate, a metal layer and a sacrificial layer being sequentially deposited on the substrate; forming a first patterned photoresist layer on the sacrificial layer; and etching along the first photoresist layer, removing the sacrificial layer, and etching the metal layer to form a plurality of wire structures, each wire structure comprising two first sections extending in parallel in a first direction and a second section connected to the two first sections.
Inventors:
JIANG LIWEI (CN)
Application Number:
PCT/CN2023/089259
Publication Date:
May 02, 2024
Filing Date:
April 19, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/82; H01L21/027; H10B12/00
Foreign References:
| CN114093820A | 2022-02-25 | |||
| CN115020411A | 2022-09-06 | |||
| KR20210144096A | 2021-11-30 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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