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WO/2024/091322A1 |
Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and i...
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WO/2024/087787A1 |
The present disclosure relates to a semiconductor structure, a formation method therefor, and a memory. The formation method of the present disclosure comprises: providing a base, the base comprising a substrate, and one side of the subs...
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WO/2024/090208A1 |
Provided is a substrate processing method comprising: (a) preparing a substrate on a mounting table, the substrate having a silicon nitride-containing film in which a recess defined by a top, a side wall, and a bottom is formed, and a si...
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WO/2024/088437A1 |
The present invention relates to the technical field of conveying and feeding, and particularly to a pin-belt-type insertion pin feeding mechanism and an operating method thereof. The present invention provides a pin-belt-type insertion ...
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WO/2024/091101A1 |
Provided are: chemical mechanical polishing cerium oxide particles; and a chemical mechanical polishing slurry composition containing same. Provided are the chemical mechanical polishing slurry composition and a method for manufacturing ...
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WO/2024/091645A1 |
Systems, methods, and curriculum for simulating semiconductor production and associated methods of using the same on a wafer suitable to produce a semiconductor. One or more barriers of a central laboratory hub of the system separate sta...
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WO/2024/090252A1 |
This substrate treatment method includes: (a) a step of preparing a substrate, the substrate containing a first region including a first material and a second region including a second material which is different from the first material;...
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WO/2024/091643A1 |
An electronic device placement system includes a placement head including a spindle, a positioning system configured to move the spindle between a picking location and a placement location, a spindle assembly Z-drive, a piezo stage movab...
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WO/2024/090060A1 |
In step S5, before using a new brush for cleaning, an image of the cleaning surface of the brush is captured as a reference cleaning surface image. The cleaning is performed by applying the cleaning surface of the brush to a substrate. A...
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WO/2024/087392A1 |
Disclosed in the present disclosure is a dicing method for a multi-layer stacked wafer. The method comprises the following steps: forming a first stack structure located on a first base, and a second stack structure stacked on the first ...
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WO/2024/091321A1 |
Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and i...
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WO/2024/089850A1 |
This polishing liquid contains abrasive grains containing cerium oxide, at least one type of aromatic carboxylic acid compound selected from the group consisting of aromatic carboxylic acids and salts thereof, and halide ions. This polis...
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WO/2024/088767A1 |
The invention relates to a susceptor for a device for depositing a layer of semiconductor material onto a substrate wafer by means of deposition from the gas phase, the susceptor comprising a susceptor plate and a carrier ring for a subs...
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WO/2024/090278A1 |
The present invention provides a highly reliable semiconductor device by suppressing damage to a semiconductor element and changes in the properties thereof and suppressing the occurrence of insulation defects between conductor patterns ...
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WO/2024/087703A1 |
Provided in the present application are a transistor, an integrated circuit and a preparation method, and an electronic device. The transistor comprises a channel and a gate arranged on the channel. The gate comprises a coverage layer ar...
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WO/2024/089187A1 |
The invention relates to a piezoelectric-on-insulator (POI) substrate (130) comprising a carrier substrate (100) comprising a trapping layer (102) on a free surface (104) of the carrier substrate (100), a piezoelectric layer (106), an in...
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WO/2024/091793A1 |
Embodiments of the present technology include semiconductor processing methods. The methods may include providing a silicon-containing precursor and a dopant precursor to a processing region of a semiconductor processing chamber. A subst...
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WO/2024/091781A1 |
Exemplary semiconductor processing methods may include providing a resist precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. One or more light emitting diode ...
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WO/2024/091404A1 |
The present disclosure relates to methods, systems, and apparatus for monitoring temperature at multiple sites within a substrate processing chamber. A system for processing substrates includes: a process chamber comprising a processing ...
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WO/2024/089922A1 |
Provided is a selection method for abrasive grains, wherein the abrasive grains contain cerium and are selected on the basis of a short-life component value of the positron lifetime measured by means of a positron annihilation method. Pr...
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WO/2024/092057A1 |
A method includes obtaining, by a processing device, data indicative of locations of defects of a substrate. The method further includes generating an image indicating the locations of the defects. The method further includes providing t...
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WO/2024/091397A1 |
Methods and systems for inspecting a specimen are provided. One system includes an inspection subsystem configured for directing light to an area on the specimen and for generating output responsive to light from the area on the specimen...
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WO/2024/090846A1 |
The present invention relates to a vacuum-based thin film modifier, a thin film modifying composition comprising same, a thin film forming method using same, and a semiconductor substrate and semiconductor device manufactured therefrom, ...
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WO/2024/087894A1 |
An adhesive tape tearing module for a double-glass assembly, and an adhesive tape tearing machine. The adhesive tape tearing module comprises an adhesive tape tearing assembly; the adhesive tape tearing assembly comprises a second transf...
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WO/2024/087181A1 |
The present application relates to the technical filed of display, and discloses a display apparatus. The display apparatus comprises a first housing, a second housing, a flexible display panel, a reel, a connecting plate, a tensioning a...
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WO/2024/089359A1 |
The invention relates to a method for forming a respective layer of silicon carbide (20) on a plurality of silicon substrates, the method consecutively comprising: - placing a plurality of vertically stacked silicon base substrates (10) ...
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WO/2024/091389A1 |
An apparatus comprises an electrostatic chuck including a plate electrode and a column structure coupled with the plate electrode. A disk is coupled with the electrostatic chuck where the disk includes a first hole in a center of the dis...
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WO/2024/091933A2 |
A method of forming a heterostructure includes providing a substrate, forming a template layer of the heterostructure such that the template layer is supported by the substrate, and implementing a non-sputtered, epitaxial growth procedur...
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WO/2024/090139A1 |
[Problem] To provide a processing system which can efficiently process a plurality of objects to be processed by using a robot. [Solution] The present invention is configured to have: a cage 100 for processing which has a cage body 10 fo...
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WO/2024/087634A1 |
The present application relates to a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: an isolation tray (118) having a first conductivity type; an injection assistance structure comprisi...
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WO/2024/087538A1 |
Disclosed are a semiconductor structure and a manufacturing method therefor, and a memory. The manufacturing method comprises: providing a substrate (100), and forming, on the top surface of the substrate (100), a plurality of isolation ...
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WO/2024/091416A1 |
Embodiments of the present disclosure generally relate to apparatus and systems for in-situ film growth rate monitoring and include a system to monitor film growth on a substrate including a light source, a collimator, a dichroic mirror,...
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WO/2024/091314A1 |
A chemical mechanical polishing apparatus has a platen to support a polishing pad, the platen having a recess, a carrier head to hold a surface of a substrate against the polishing pad and comprising a retaining ring to retain the substr...
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WO/2024/088942A1 |
One aspect of the invention relates to a method for producing a semiconductor stack (10), comprising, from a first silicon layer (11), referred to as a support layer, the following steps: - forming a silicon carbide layer (12), extending...
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WO/2024/089912A1 |
The purpose of the present invention is to provide a device and a method for manufacturing a semiconductor crystal wafer, the device and the method being capable of easily and reliably manufacturing a semiconductor crystal wafer of high ...
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WO/2024/090081A1 |
[Problem] To provide an amplifier circuit, a comparator, and a solid-state imaging device that can suppress RTS noise. [Solution] An amplifier circuit according to the present disclosure comprises: an active load; and a plurality of inpu...
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WO/2024/089762A1 |
A wafer placement table 10 comprises: a ceramic plate 20; a cooling plate 30; a bonding layer 40; recessed grooves 21d; plug placement holes 24; and porous plugs 50. The ceramic plate 20 includes: a wafer placement part 21 having a refer...
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WO/2024/089571A1 |
Provided is a semiconductor device having favorable electrical properties. This semiconductor device has a transistor, a first interlayer insulating layer, and a second interlayer insulating layer on the first interlayer insulating layer...
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WO/2024/090442A1 |
A hydrostatic gas bearing device according to the present disclosure comprises: a movable member; and a fixed member. A recess is located on a bearing surface of a base of the movable member or the fixed member, and an opening of a gas s...
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WO/2024/090934A1 |
The present invention provides a substrate processing method. In the substrate processing method according to an embodiment, a substrate is processed by supplying process gas into a chamber, wherein a part of the process gas is excited i...
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WO/2024/090226A1 |
[Problem] To provide a film forming apparatus which is capable of forming a film that has a uniform film thickness, while suppressing contamination of the working environment during the film formation. [Solution] A film forming apparatus...
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WO/2024/091305A1 |
The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing vol...
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WO/2024/090756A1 |
The present invention relates to a gate valve, and a method for fastening a sealing plate. The gate valve according to one embodiment of the present invention has a structure enabling convenient replacement if sealing, which is a consuma...
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WO/2024/086959A1 |
Tasks To provide a sensor that can detect both visible light and infrared light, which shows sufficient resolution of infrared images and sensitivity of visible-light images. Means of Solution The sensor includes a dual band pass filter,...
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WO/2024/090275A1 |
This film forming method comprises: a step for preparing a substrate which has a first film and a second film that is formed of a material different from the material of the first film in different regions of the surface; a step for supp...
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WO/2024/091455A1 |
Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. The present disclosure discloses pulsed radiation sources used to measure a broad range of low to high temperatures in...
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WO/2024/091819A1 |
A method to deposit a multi-layer stack for device applications includes implementing a model driven target selection for deposition. One or more targets may be procured with an initial stoichiometric composition or elemental purity. The...
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WO/2024/090276A1 |
The disclosed substrate support comprises: a support body; a base; and a ceramic member. The support body is configured so as to support an object thereupon. The object includes a substrate. The support body has a dielectric body and an ...
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WO/2024/091098A1 |
Provided are: cerium oxide particles for chemical mechanical polishing; and a chemical mechanical polishing slurry composition containing same. The characteristic cerium oxide particles of the present invention can be combined with a sur...
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WO/2024/091099A1 |
Provided are cerium oxide particles for chemical mechanical polishing and a chemical mechanical polishing slurry composition comprising same. A combination of the characteristic cerium oxide particles of the present invention with a cati...
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