SUBSTRATE PROCESSING METHOD

Title:

SUBSTRATE PROCESSING METHOD

Document Type and Number:

WIPO Patent Application WO/2024/090934

Kind Code:

A1

Abstract:

The present invention provides a substrate processing method. In the substrate processing method according to an embodiment, a substrate is processed by supplying process gas into a chamber, wherein a part of the process gas is excited into a state of plasma, the plasma removes a hard mask film formed on a substrate from the substrate, another part of the process gas reacts with a thin film formed on the substrate to form a passivation film on the surface of the thin film, and the process gas may be a CHF-based gas.

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Inventors:

LEE JUN HYEOK (KR)
PARK SANG JONG (KR)

Application Number:

PCT/KR2023/016489

Publication Date:

May 02, 2024

Filing Date:

October 23, 2023

Export Citation:

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Assignee:

PSK INC (KR)

International Classes:

H01L21/311; H01J37/32

Attorney, Agent or Firm:

KWON, Hyuk-Soo et al. (KR)

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