Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/089571
Kind Code:
A1
Abstract:
Provided is a semiconductor device having favorable electrical properties. This semiconductor device has a transistor, a first interlayer insulating layer, and a second interlayer insulating layer on the first interlayer insulating layer. The transistor has a first conductive layer that functions as one among a source electrode and a drain electrode, and a second conductive layer that functions as the other among the source electrode and the drain electrode, the first and second interlayer insulating layers being provided between the first conductive layer and the second conductive layer. An opening section that reaches the first conductive layer is provided in the first and second interlayer insulating layers and the second conductive layer, and a semiconductor layer, a first gate insulating layer, and a first gate electrode are provided in said order so as to have regions positioned inside the opening section. A second gate electrode is provided between the first interlayer insulating layer and the second interlayer insulating layer so as to cover a side surface of the semiconductor layer. The second gate electrode has an oxide region that has a region contacting the semiconductor layer. The oxide region functions as a second gate insulating layer.
Inventors:
YAMAZAKI SHUNPEI (JP)
MATSUZAKI TAKANORI (JP)
ISAKA FUMITO (JP)
MATSUZAKI TAKANORI (JP)
ISAKA FUMITO (JP)
Application Number:
PCT/IB2023/060659
Publication Date:
May 02, 2024
Filing Date:
October 23, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/8234; H01L27/06; H01L27/088; H10B12/00
Domestic Patent References:
| WO2019008483A1 | 2019-01-10 |
Foreign References:
| US20220149166A1 | 2022-05-12 |
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