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WO/2024/095768A1 |
This substrate processing method for processing a substrate includes forming a reformed layer and a crack by irradiating a substrate with a laser beam, and involves: acquiring data relating to a cumulative number of substrates processed,...
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WO/2024/092483A1 |
Provided are a light-emitting substrate, a light-emitting device and a lighting device. The light-emitting substrate comprises: a base substrate, comprising a plurality of light-emitting regions and a plurality of non-light emitting regi...
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WO/2024/097569A1 |
Methods and systems for evaluating individual semiconductor metrology tool productivity based on both individual tool productivity metrics and fleet productivity metrics are described herein. Productivity metrics associated with each ind...
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WO/2024/096767A1 |
Methods and apparatuses for estimating a property of a semiconductor device using a quantum computing device are provided. A method comprises initializing a first system of equations based on one or more parameters relating to a spatiall...
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WO/2024/097005A1 |
In certain embodiments, a method includes forming, on a substrate by spin-on deposition, a layer stack of alternating layers of first and second carbon-containing materials. The layers of the first carbon-containing material include an a...
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WO/2024/093190A1 |
Embodiments of the present disclosure provide a semiconductor structure manufacturing method, and a semiconductor structure. The manufacturing method comprises: a substrate at least comprising mark regions and a blank region located betw...
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WO/2024/096277A1 |
The present invention relates to a polishing slurry composition. An embodiment pertains to a polishing slurry composition for organic membrane polishing, the composition including: polishing particles containing metal-coated metal oxide;...
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WO/2024/097585A1 |
A method of doping a substrate may include exposing a substrate surface of the semiconductor substrate to a plasma clean, performing a deposition of a dopant layer on the substrate surface using a plasma source, after the plasma clean, t...
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WO/2024/094304A1 |
The present invention relates to a method for heating of a substrate (20), in particular a substrate (20) of a thermal laser evaporation (TLE) system (10). Further, the present invention relates to a substrate heater (30) for heating a s...
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WO/2024/097891A2 |
Methods for maintaining stable resistivity of a high resistivity silicon-on-insulator (HR-SOI) wafer are presented. The HR-SOI wafer includes a HR-Si substrate having a resistivity that is higher than about 1000 ohm.cm and a dopant conce...
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WO/2024/097679A1 |
Systems and methods for increasing a heat transfer contact area associated with an edge ring are described. The edge ring includes a horizontal section having an inner diameter and an outer diameter. The inner diameter surrounds a substr...
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WO/2024/092903A1 |
The disclosure relates to a semiconductor structure and a preparation method therefor. The preparation method comprises: providing a substrate, wherein the substrate is provided with a first region and a second region; forming gate struc...
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WO/2024/095751A1 |
Provided is a light-detecting device which comprises a through conductor and in which degradation of electrical characteristics is suppressed even at an aspect ratio tailored for miniaturization or the like. The light-detecting device in...
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WO/2024/045864A9 |
Provided in the present application are a semiconductor device, a preparation method and an electronic device. The method comprises: forming, on a substrate, a plurality of stacked structures, which are arranged spaced apart from each ot...
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WO/2024/095109A1 |
Provided is a semiconductor device having reduced power consumption. Or, provided is a semiconductor device having high reliability. Or, provided is a semiconductor device in which increases in circuit layout area are suppressed. Or, pro...
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WO/2024/097903A1 |
Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of g...
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WO/2024/093124A1 |
A switch standard unit, a switch, and a layout design method. The switch standard unit comprises a switch input part, a switch output part and a connecting part, all of which are arranged in a framework area, wherein the switch input par...
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WO/2024/095760A1 |
Provided is a substrate processing apparatus capable of preventing adverse effects on a substrate due to a water repellant. A substrate processing apparatus 1 according to the present invention is configured such that, when a substrate W...
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WO/2024/095537A1 |
The present invention realizes a capacitor that comprises composite bulk members with outstanding mechanical strength. The present invention is a capacitor that comprises: a conductive substrate; a plurality of fiber-like conductive memb...
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WO/2024/092550A1 |
The present invention relates to a quality improvement method and apparatus for a semiconductor device, and a high-energy particle beam photolithography device. The method comprises: acquiring connected regions consisting of target pixel...
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WO/2024/092947A1 |
Embodiments of the present disclosure provide a semiconductor structure and a method for forming same. The semiconductor structure comprises a substrate, the substrate comprising a plurality of active regions arranged at intervals in a f...
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WO/2024/096006A1 |
According to the present invention, it is possible to provide an aqueous composition for etching, the aqueous composition comprising an oxidizing agent, an acid, and a corrosion inhibitor, and having a pH of 0 to 3. The aqueous compositi...
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WO/2024/095639A1 |
[Problem] To provide a light receiving element in which random noise is reduced. [Solution] A light receiving element according to an aspect of the present disclosure comprises a photoelectric conversion circuit that outputs a pixel sign...
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WO/2024/049506A3 |
An ink may be provided that includes a two-dimensional WS2 nanosheet and an organic solvent, such as water, and may be free of protective molecules and surfactants. Circuits may be provided that include this ink disposed onto a surface o...
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WO/2024/095856A1 |
This substrate processing system comprises: a processing module including a processing chamber, a substrate support unit, and a lifter; a vacuum transfer module that is connected to the processing module and includes a transport robot fo...
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WO/2024/095536A1 |
Provided is a capacitor that uses a plurality of fibrous conductive members and has high bonding strength between a substrate and a composite bulk member. The capacitor comprises: a conductive substrate; a plurality of fibrous conductive...
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WO/2024/093138A1 |
Disclosed are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a semiconductor channel, which extends in a first direction and is a component of a transistor, wherein in the first dire...
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WO/2024/095441A1 |
A semiconductor wafer transport container according to one embodiment comprises a plastic container for accommodating a semiconductor wafer. The vicinity of the surface of the plastic at least at an inner surface of the plastic container...
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WO/2024/095610A1 |
The present invention improves the noise resistance of a capacitor element that is formed within a through hole. This electronic device is provided with: a substrate; a through hole which penetrates through the substrate; a capacitor e...
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WO/2024/010848A3 |
A device includes a substrate and a ferroelectric layer supported by the substrate. The ferroelectric layer includes an alloy of a III-nitride material. The alloy includes a Group IIIB element. The substrate includes silicon.
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WO/2024/095780A1 |
A substrate processing system (S) according to one aspect of the present disclosure comprises a processing fluid supply device (70), a substrate processing device (1), a supply line, and a temperature measurement unit. The processing flu...
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WO/2024/092459A1 |
The present disclosure relates to a process restriction strategy determination method and apparatus, and a server. The method comprises: in response to an operation of binding process restriction strategies to a target device, displaying...
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WO/2024/097593A1 |
A method of method of treating a semiconductor substrate. The method may include, in a beamline ion implanter, exposing a substrate surface of the semiconductor substrate to a plasma clean and exposing the substrate surface to a hydrogen...
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WO/2024/095259A1 |
A method for defect mitigation is disclosed. The method may include receiving defect data for one or more defects of one or more samples. The defect data may include a defect location, a defect size, a defect shape, or a relationship bet...
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WO/2024/096663A1 |
The present invention provides a high-pressure substrate processing apparatus comprising: an inner chamber accommodating a substrate to be processed; an outer chamber provided with an outer housing accommodating the inner chamber and an ...
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WO/2024/096077A1 |
Provided is a semiconductor substrate processing liquid having superior ability in removing organic matter on a substrate. One aspect of the present disclosure pertains to a semiconductor substrate processing liquid containing an aroma...
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WO/2024/093559A1 |
A photodetector (7), an optical receiving module (23) and an electronic device. The photodetector (7) comprises a hybrid substrate of bulk silicon and silicon-on-insulator; a transistor is formed on a silicon-on-insulator substrate; a fi...
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WO/2024/095923A1 |
This cleaning liquid for cleaning a substrate that has metal exposed on a surface thereof comprises a basic compound, an amino acid, and water, the cleaning liquid having the isoelectric point (pI) of the amino acid and the pH of the cle...
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WO/2024/097077A1 |
A seal for a substrate support in a substrate processing system includes first and second annular seal portions each having upper and lower edges. The second seal portion is located radially outside of the first seal portion. A height of...
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WO/2024/093969A1 |
Disclosed in the present disclosure are a semiconductor process chamber and a semiconductor process apparatus, relating to the field of semiconductor apparatus. The semiconductor process chamber comprises a cavity and a lower electrode s...
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WO/2024/096945A1 |
A cleaning apparatus includes at least one cleaning module (12) configured to treat electronic substrates (18) and a conveyor system (16) configured to transport the electronic substrates through the at least one cleaning module. The at ...
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WO/2024/092457A1 |
Provided are a method and apparatus for updating the state of a carrier, and a server. The method comprises: acquiring a use state, a withholding state and a clean state of a carrier (41); determining the next state of the carrier accord...
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WO/2024/092867A1 |
Embodiments of the present invention relate to the technical field of semiconductors, and provide a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a semiconductor channel extending in ...
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WO/2024/076941A3 |
A substrate handling apparatus according to one or more embodiments may include: a base, an elevating unit that is connected to the base to freely elevate and lower, an arm that is rotatably connected to the elevating unit, a disk that i...
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WO/2024/096229A1 |
A patterning method according to one embodiment of the present invention comprises the steps of: forming a first photoresist layer on a substrate; performing first segmented exposure on the first photoresist layer with first exposure ene...
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WO/2024/096660A1 |
The present invention provides a high-pressure substrate processing apparatus and a processing gas line used therefor. The high-pressure substrate processing apparatus comprises: an inner chamber having an inner housing formed to accommo...
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WO/2024/095718A1 |
Provided are: a film formation device capable of suctioning a substrate in a stable state to a suctioning member; a method for driving the film formation device; and a film formation method. The film formation device comprises: an elec...
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WO/2024/095997A1 |
This polishing device comprises: a polishing table that supports a polishing pad; a polishing head capable of pressing a substrate onto a polishing surface of the polishing pad; and a processor that estimates a polishing index of the pol...
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WO/2024/094613A1 |
A method for manufacturing a semiconductor device (10, 20) comprises forming (S100) a compound semiconductor layer (110) over a growth substrate (100), the compound semiconductor layer (110) comprising N, a further element E, wherein E i...
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WO/2024/095597A1 |
This semiconductor module comprises at least one substrate and a plurality of semiconductor switching elements. The substrate has a first electrode pattern, a second electrode pattern, and a third electrode pattern, the first electrode p...
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