Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/087634
Kind Code:
A1
Abstract:
The present application relates to a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: an isolation tray (118) having a first conductivity type; an injection assistance structure comprising a plurality of grooves filled by a filler; a first well region (112) which has the first conductivity type, continues extending downward from the bottom of the injection assistance structure, and is located below the isolation tray (118); and a second well region (114), which has the first conductivity type, and is located below the isolation tray (118) and above the first well region (112); the injection assistance structure passes through the second well region (114) in a vertical direction, and the second well region (114) is in direct contact with the first well region (112) and the isolation tray (118). In the present application, providing the injection assistance structure allows for forming a deeper first well region, and thus a deeper transverse voltage-resistant structure (isolation tray, second well region, and first well region), capable of withstanding a higher voltage.
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Inventors:
HE NAILONG (CN)
ZHANG SEN (CN)
SHAO HONG (CN)
ZHANG HUAGANG (CN)
ZHANG SEN (CN)
SHAO HONG (CN)
ZHANG HUAGANG (CN)
Application Number:
PCT/CN2023/098220
Publication Date:
May 02, 2024
Filing Date:
June 05, 2023
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/78; H01L21/762; H01L29/06
Foreign References:
| CN114823872A | 2022-07-29 | |||
| CN107403839A | 2017-11-28 | |||
| CN111354677A | 2020-06-30 | |||
| CN216624288U | 2022-05-27 | |||
| US20180182747A1 | 2018-06-28 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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