Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND STORAGE SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/087403
Kind Code:
A1
Abstract:
Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method therefor, and a storage system. The semiconductor structure comprises: a substrate; a dielectric layer, located on the substrate; conductive structures, located in the dielectric layer and penetrating through the dielectric layer; interconnection layers, located on the dielectric layer, wherein the interconnection layers are each provided with an interconnection conductive pattern and a pseudo conductive pattern, the interconnection conductive pattern is located on each conductive structure and is connected to the conductive structure, and the pseudo conductive pattern is located between the interconnection conductive patterns; and an interlayer insulating layer, covering the interconnection layers, wherein the interlayer insulating layer is provided with an air gap between two adjacent conductive patterns in the interconnection layers.
Inventors:
XUE DONGYANG (CN)
Application Number:
PCT/CN2023/073847
Publication Date:
May 02, 2024
Filing Date:
January 30, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/522; H01L21/768; H01L23/528
Foreign References:
| CN115513171A | 2022-12-23 | |||
| JP2005136152A | 2005-05-26 | |||
| TW200404353A | 2004-03-16 | |||
| CN103247597A | 2013-08-14 | |||
| CN111696914A | 2020-09-22 | |||
| US20020014697A1 | 2002-02-07 | |||
| US20090263951A1 | 2009-10-22 | |||
| US6333221B1 | 2001-12-25 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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