Title:
SELECTIVE ETCHING SOLUTION FOR 3D NAND STRUCTURAL SHEET OF SILICON NITRIDE/SILICON OXIDE
Document Type and Number:
WIPO Patent Application WO/2024/077874
Kind Code:
A1
Abstract:
Disclosed in the present invention is a selective etching solution for a 3D NAND structural sheet of silicon nitride/silicon oxide; and the etching solution comprises a silane coupling agent, phosphoric acid, and water. The etching solution for silicon nitride of the present invention can improve the etching selection ratio of silicon nitride to silicon oxide, selectively remove a silicon nitride layer, prolong the service life of the etching solution, and adapt to the etching of a laminated structure.
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Inventors:
LI SHAOPING (CN)
HE ZHAOBO (CN)
BAN CHANGSHENG (CN)
YE RUI (CN)
JIANG FEI (CN)
ZHANG TING (CN)
FENG FAN (CN)
FENG KAI (CN)
WANG SHUPING (CN)
PENG FEI (CN)
HE ZHAOBO (CN)
BAN CHANGSHENG (CN)
YE RUI (CN)
JIANG FEI (CN)
ZHANG TING (CN)
FENG FAN (CN)
FENG KAI (CN)
WANG SHUPING (CN)
PENG FEI (CN)
Application Number:
PCT/CN2023/083370
Publication Date:
April 18, 2024
Filing Date:
March 23, 2023
Export Citation:
Assignee:
HUBEI SINOPHORUS ELECTRONIC MAT CO LTD (CN)
International Classes:
C09K13/00; C23F1/00; H01L21/308
Foreign References:
| CN113544822A | 2021-10-22 | |||
| CN111363550A | 2020-07-03 | |||
| CN112996881A | 2021-06-18 | |||
| CN115011350A | 2022-09-06 | |||
| CN108690621A | 2018-10-23 | |||
| US20210108140A1 | 2021-04-15 | |||
| KR20170030774A | 2017-03-20 |
Attorney, Agent or Firm:
YICHANG THREE GORGES PATENT (CN)
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