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Title:
SILICON-CONTAINING FILM PRECURSOR, COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR MANUFACTURING SULFUR-CONTAINING SILOXANE, AND METHOD FOR MANUFACTURING SILICON-CONTAINING FILM
Document Type and Number:
WIPO Patent Application WO/2024/080237
Kind Code:
A1
Abstract:
Provided is a siloxane compound that can be used as a siloxane-containing film precursor with which it is possible, in the formation of a silicon-containing film, to form a film by atomic layer deposition (ALD) even in high-temperature conditions, by a sulfur-containing siloxane represented by formula (1) (where: R1 to R8 are, independently in each occurrence, a hydrogen atom, a C1-5 alkyl group, a C2-5 alkenyl group, a C2-5 alkynyl group, or a C1-5 alkoxy group; R1 to R8 may each bond with each other to form a ring; X1 to X3 are, independently in each occurrence, an oxygen atom or a sulfur atom; and n is an integer from 0 to 2).

Inventors:
TAIRA GENKI (JP)
UENO YOSHIHIDE (JP)
Application Number:
PCT/JP2023/036524
Publication Date:
April 18, 2024
Filing Date:
October 06, 2023
Export Citation:
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Assignee:
SUMITOMO SEIKA CHEMICALS (JP)
International Classes:
C23C16/42; C07F7/21; H01L21/316; H01L21/318
Domestic Patent References:
WO2007061134A12007-05-31
Foreign References:
JP2003238578A2003-08-27
Other References:
B. BECKER: "Contributions to the chemistry of silicon-sulphur compounds: LI. The insertion of sulphur into SiSi bonds of permethylpolysilanes", JOURNAL OF ORGANOMETALLIC CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 346, no. 3, 1 January 1988 (1988-01-01), AMSTERDAM, NL , pages 287 - 296, XP093159442, ISSN: 0022-328X, DOI: 10.1016/0022-328X(88)80128-1
K S DILANJAN SOYSA: "PYROLYSIS OF HEXAMETHYLCYCLOTRISILTHIANE AND TETRAMETHYLCYCLODISILTHIANE IN THE PRESENCE OF CYCLIC SILOXANES: EVIDENCE FOR THE INTERMEDIACY OF DIMETHYLSILATHIONE [:Si=s]", JOURNAL OF ORGANOMETALLIC CHEMISTRY, vol. 165, no. 1, 23 January 1979 (1979-01-23), pages C1 - C4, XP093159446, DOI: 10.1016/S0022-328X(00)81143-2
Attorney, Agent or Firm:
YAMAO, Norihito et al. (JP)
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