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WO/2024/095620A1 |
Provided is a surface emitting laser that can apply a desired loss to a transverse mode. A surface emitting laser according to the present invention comprises an active layer, a first structure having a concave mirror disposed on one s...
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WO/2024/095835A1 |
This semiconductor laser device comprises: an active layer that includes a barrier layer and well layers which are provided respectively on both sides of the barrier layer in the thickness direction of the barrier layer; and an n-type se...
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WO/2024/096421A1 |
Disclosed is a method for a light detection and ranging (LiDAR) device to measure the distance from the LiDAR device to an object. Specifically, the method may include a LiDAR device: outputting a first laser beam through a vertical-cavi...
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WO/2024/097110A1 |
A method of forming a semiconductor device includes etching a semiconductor layer to form a plurality of mesa stripes in the semiconductor layer. The plurality of mesa stripes extend in a first direction and include mesa sidewalls that e...
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WO/2024/095193A1 |
Some semiconductor gain chips used for both optically pumped and electrically pumped semiconductor lasers contain transparent layers for cooling or other purposes. These layers may cause unwanted etalon effect if one or more of the trans...
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WO/2024/095424A1 |
A beam splitter (3) divides a laser beam (2) to generate a first beam (5). An etalon (6) transmits therethrough a portion of the first beam (5), and reflects the remaining portion of the first beam (5) on an end surface thereof to genera...
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WO/2024/095504A1 |
Provided is a surface-emitting laser capable of achieving stabilization of a horizontal mode while suppressing a decline in productivity. A surface-emitting laser according to the present technology comprises: a first structure includi...
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WO/2024/095556A1 |
Provided is a fiber retention structure that can suppress production of heat by light not coupled to an optical fiber. A fiber retention structure 30 comprises: an optical fiber 20 that includes a front end 21, a first fixing part 22 tha...
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WO/2024/087176A1 |
The present application relates to the technical field of electronics. Provided are an integrated apparatus and a manufacturing method therefor, and an integrated circuit, a detection apparatus and a terminal, which are used for reducing...
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WO/2024/089024A1 |
The invention relates to a cooling method (10) for controlling the temperature of a cooling device (16) taking into account heating at least one machine component (12) of a process machine (14) during operation of the process machine (14...
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WO/2024/089701A2 |
A system for transmitting laser power to a remote receiver, comprising a laser diode, an optical system for collimating and focusing the laser beam onto the receiver, and a scanning system for directing the beam towards the receiver. The...
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WO/2024/083613A1 |
The invention relates to a semiconductor component (10) for emitting laser light, comprising a main body (11) and, arranged on a surface (18) of the main body (11), at least one mesa body (12) comprising a superficial emission region (13...
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WO/2024/082726A1 |
The present application provides a circuit structure, a driving circuit of a semiconductor laser, and a laser radar transmitting module. The circuit structure comprises a charging circuit and a discharging circuit; an input end of the ch...
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WO/2024/084693A1 |
A semiconductor laser light source device comprising a metal stem (1), a temperature control module (3) secured to the front surface of the metal stem (1), a first support block (4) secured to the temperature control module (3), a first ...
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WO/2024/084286A2 |
A system and method for assembly. In some embodiments, the method includes: optically aligning a transfer stamp with a platform wafer, the transfer stamp including a device coupon for bonding to the platform wafer, the device coupon incl...
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WO/2024/083995A1 |
The invention relates to an oscillator arrangement for generating THz radiation with an active laser layer structure (10) based on a semiconductor material for emitting laser light (107) of at least one wavelength, the main emission dire...
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WO/2024/083505A1 |
The invention relates to an optoelectronic module (1). The optoelectronic module (1) comprises a first semiconductor component (11), a second semiconductor component (12) and a third semiconductor component (13). The semiconductor compon...
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WO/2024/085477A1 |
The present invention relates to a vertical light-emitting nanorod laser diode and a manufacturing method therefor, and, more specifically, to a vertical light-emitting nanorod laser diode and a manufacturing method therefor, the diode b...
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WO/2024/085108A1 |
A semiconductor light-emitting element (1) emits light from a front end surface (1F) and comprises a semiconductor laminate (1S) having a waveguide, a first P-side electrode (71), and a pad electrode (73). The semiconductor light-emittin...
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WO/2024/085205A1 |
The present invention achieves a light-emitting device that emits light with a good polarization ratio. Provided is a light-emitting device comprising: a first sub-mount which has a ceramic substrate that contains AlN and a plurality of ...
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WO/2024/084898A1 |
Provided is a vertical cavity light emitting element having a low threshold current density, high luminous efficiency, and improved lifespan. A vertical cavity surface light emitting laser 10 comprises: a semiconductor DBR12; an n-type s...
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WO/2024/078268A1 |
A laser device, comprising a housing (100), a plurality of laser chip assemblies (200), and a shaping and homogenizing component (300). The housing (100) comprises a bottom plate (101) and a side wall (102). The side wall (102) is provid...
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WO/2024/074254A1 |
In one embodiment, the optoelectronic light source (1) comprises : - a first semiconductor laser (21) configured to emit a first laser beam (L1), and - a redirecting optical element (4), wherein the first laser beam (L1) runs from the fi...
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WO/2024/076950A1 |
An optics-integrated confinement apparatus system comprises a confinement apparatus chip having a confinement apparatus formed thereon and having at least one apparatus optical element disposed and/or formed thereon.
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WO/2024/076720A1 |
The process of heating up a cavity with a diode laser or light beam source with a booster current pulse followed by application of a drive to the diode to produce a continuous wave (CW) over time while the cavity cools (spontaneously or ...
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WO/2024/076423A1 |
A display system includes an integrated laser and modulator device and a display assembly. The integrated laser and modulator device includes a laser component configured to facilitate light emission responsive to applied current and a m...
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WO/2024/075594A1 |
This semiconductor laser device comprises: a semiconductor laser element (11) and a semiconductor laser element (12); a reflecting mirror (71) that reflects first laser light emitted from the semiconductor laser element (11); and a refle...
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WO/2024/076443A1 |
Embodiments herein relate to a photonic integrated circuit (PIC). The PIC may include a transmit module and a receive module. An optical port of the PIC may be coupled to the transmit module or the receive module. A semiconductor optical...
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WO/2024/076393A1 |
The system and method for mounting a high power laser having a coefficient of thermal expansion that is thermally matched for the gain medium and the mount. In some cases, the gain medium is clamped by the mount along longitudinal edges ...
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WO/2024/075595A1 |
This semiconductor laser device (1) comprises: a housing (2) that has a flat bottom surface (6a); semiconductor laser elements (10–15) that are arranged in the housing (2); fast axis collimator lenses (30–35) that respectively collim...
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WO/2024/074941A1 |
A pulsed laser diode driver includes a source capacitor that receives a refresh current at a first terminal and develops a source voltage therefrom. A first terminal of an inductor is connected to the first terminal of the source capacit...
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WO/2024/068344A1 |
A photonic integrated circuit (10) comprises a pumping laser diode (100) that is designed to emit pumping radiation (11). The photonic integrated circuit (10) furthermore comprises a gain medium (105), which is suitable for absorbing the...
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WO/2024/070857A1 |
A light emitting device according to the present invention includes: a base having a mounting surface; a plurality of semiconductor laser elements each emitting a laser beam in a first direction and arranged on the mounting surface along...
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WO/2024/071244A1 |
This semiconductor module comprises a substrate, a plurality of semiconductor elements positioned on the substrate, and a control IC positioned on the substrate to control the plurality of semiconductor elements. Further, each of the plu...
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WO/2024/066582A1 |
A light-emitting chip assembly and a laser packaging assembly, belonging to the technical field of optoelectronics. The light-emitting chip assembly is configured to emit laser light; a light-emitting chip has a first surface (M1) and a ...
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WO/2024/070252A1 |
This light source device comprises: one or more first light source parts, one or more second light source parts, and a light-shielding member disposed between the first light source parts and the second light source parts. The first ligh...
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WO/2024/067760A1 |
An integrated laser (100) and a preparation method therefor, which relate to the technical field of semiconductor devices. The integrated laser (100) comprises a substrate (110), wherein the substrate (110) is divided into a master laser...
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WO/2024/067218A1 |
A projection device (1000), comprising a light source (100), an optical modulation assembly (200), and a lens (300). The light source (100) comprises a laser (10). The laser (10) comprises a bottom plate (101), a frame body (102), a plur...
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WO/2024/069755A1 |
An optical semiconductor device (100) according to the present disclosure comprises a semiconductor laser unit (70) and an optical modulator unit (72) that are formed on a common semiconductor substrate (1). The semiconductor laser unit ...
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WO/2024/070351A1 |
A nitride-based semiconductor light-emitting device (100) emits light and comprises an N-type cladding layer (104), an N-side light guide layer (106), an active layer (107), an electron barrier layer (109), a P-type intermediate layer (1...
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WO/2024/069606A1 |
Silicon photonic crystal (10; 10'; 10") comprising periodic silicon structures (12) contiguous with voids (14), and a silicon resonant cavity (16) consisting of silicon nanowires (18) entirely made of silicon with uniform doping, said na...
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WO/2024/072664A1 |
A system for reducing or eliminating wavelength variations of laser light is provided. The system comprises a semiconductor-based laser source emitting laser light, an optical scanner, and one or more optical elements disposed between th...
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WO/2024/068284A1 |
In at least one embodiment, the method for producing a semiconductor laser (100) comprises: - providing a semiconductor body (10) having a first region (1) of a first conductivity type, a second region (2) and an active region (3) for pr...
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WO/2024/066412A1 |
Provided in the present invention are an infrared light-emitting diode and a manufacturing method therefor. The infrared light-emitting diode comprises, from bottom to top, a substrate, an n-type semiconductor layer, a first waveguide la...
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WO/2024/063402A1 |
The present invention relates to a heater block capable of precise control of a heating temperature and a substrate device including the heater block. The heater block may include: a first laser module having multiple laser cells; a seco...
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WO/2024/064746A1 |
An integrated photonic architecture for coherent signal generation and processing. This architecture can enhance coherent transceiver performance for many applications, including remote sensing, LiDAR, high-speed data communication, and ...
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WO/2024/061682A1 |
The invention concerns an edge emitting laser device, comprising an n-cornered mesa shaped substrate, whereas n is an even number. An elongated gain region with an active area, in particular a quantum well or a multi-quantum well is loca...
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WO/2024/062787A1 |
Provided is a light source device that is capable of combining and emitting a plurality of wavelengths of laser light, has a simple structure, and enables a decrease in device size. The light source device comprises: a stem; a pluralit...
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WO/2024/061717A2 |
The invention relates to an optoelectronic arrangement (1). The optoelectronic arrangement (1) comprises a semiconductor body (10) configured to emit coherent electromagnetic radiation in a main emission direction (10E), an optical defle...
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WO/2024/062979A1 |
Provided is a semiconductor laser element in which carrier loss can be reduced. A semiconductor laser element according to the present invention has, in the following order in the upward direction, an n-side semiconductor layer, an activ...
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