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WO/2023/141321A1 |
Provided herein is a semiconductor package and method of forming the same. The semiconductor package has a cap including a first window wafer with a first face and opposing second face, a second window wafer, and a perforated spacer wafe...
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WO/2023/139780A1 |
This method for designing a quantum cascade laser device involves designing a quantum cascade laser device having an active region (100) where a plurality of barrier layers (1, 3, 5, 7) and well layers (2, 4, 6) are formed in an alternat...
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WO/2023/139645A1 |
An optical beam scanning device (1) comprises a plurality of light sources (11, 21), a plurality of beam shapers (13, 23), a scanning mirror (40), and a scanning region correcting optical member (45). The plurality of light sources emit ...
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WO/2023/141628A1 |
In some implementations, an optical emitter includes a substrate with a surface that is off-cut relative to an orientation of a crystallographic plane of the substrate; a first set of layers disposed on the substrate and forming an activ...
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WO/2023/140224A1 |
This semiconductor laser device (100) comprises a heat sink (2), and a semiconductor laser element (1) that is joined to the heat sink (2) via a joining member (3) and is provided with a pad electrode (70). The semiconductor laser electr...
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WO/2023/140217A1 |
The present invention comprises: a photonic-crystal surface-emitting laser (PCSEL) element (110) that emits a laser beam (LB); a laser head (24) that condenses the laser beam (LB) with a condensing lens (27) at optical transmission paths...
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WO/2023/139057A1 |
A semiconductor component (10) for emitting laser light (12) comprises a main body (14), which has at least one mesa portion (16) with an emission region (18) for the laser light (12), assigned to which are a first mirror portion (20), a...
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WO/2023/140102A1 |
The present invention addresses the problem of providing an illumination system that enables an improvement in the maintainability of a lamp. An illumination system (100) comprises a pole (6), a base (7), a lamp (8), a light source unit ...
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WO/2023/134187A1 |
A semiconductor laser module (201) and a semiconductor laser (2), the semiconductor laser module (201) comprising: a heat sink base (100) having a first plane (120) and a second plane (140); laser chips (400) arranged on the first plane ...
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WO/2023/134280A1 |
A laser light source device (10) and an illumination system. The laser light source device comprises: a housing (11), wherein the housing (11) is provided with an opening (112); a wavelength conversion assembly (12), wherein the waveleng...
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WO/2023/135929A1 |
The present invention is to enable individual design of heat dissipation properties of a plurality of chips mounted in a single package. A package (100) comprises: a substrate (101); a plurality of plate members (111, 112); and a plura...
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WO/2023/136235A1 |
The present invention makes it possible to design the heat dissipation property of each of a plurality of chips, mounted in a single package, individually. A package (100) is provided with a substrate (101), a plurality of heat-dissipa...
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WO/2023/135629A1 |
A semiconductor laser (10) according to the present invention comprises a first clad layer (102), an active layer (104), and a second clad layer (106) in order on a substrate (101), a ridge part disposed in the waveguide direction in the...
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WO/2023/134438A1 |
A light beam processor, comprising: a first light beam amplifying device, a second light beam amplifying device and a light source generating device. The light source generating device is used for emitting a light source light beam to th...
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WO/2023/135596A1 |
The present application discloses an apparatus configured to measure characteristics of high power beams of laser energy used in material processing. In one embodiment, the apparatus includes a housing having a first compartment and a se...
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WO/2023/130794A1 |
A gallium nitride nano-superstructure (B), preparation methods therefor, and a gallium nitride-based laser provided with the gallium nitride nano-superstructure (B), the gallium nitride nano-superstructure (B) being used for realizing em...
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WO/2023/133392A2 |
Semiconductor laser architectures that provide weak index guiding of interband cascade lasers (ICLs) processed on a native III-V substrate and of ICLs grown on silicon or integrated on silicon by heterogeneous bonding. Weak index guiding...
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WO/2023/131536A1 |
A laser beam amplification system comprising a plurality of laser amplifiers configured to amplify a laser beam in series, wherein at least one of the laser amplifiers is supported by a plurality of actuators which are configured to move...
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WO/2023/130711A1 |
A multi-active-region semiconductor structure and a manufacturing method therefor. The multi-active-region semiconductor structure comprises: a (2k-1)th common confinement layer which is located between a kth active layer and a kth tunne...
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WO/2023/131742A1 |
Disclosed is a method (100) for fabricating a semiconductor device on a semiconductor substrate (202), wherein the semiconductor device is adapted to provide target lasing properties, the method comprises creating (102), a mask layer (20...
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WO/2023/132139A1 |
The present invention provides a surface-emitting laser capable of improving heat-dissipating properties. A surface-emitting laser according to the present invention comprises: a semiconductor multi-layer film reflecting mirror; a refl...
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WO/2023/131793A1 |
A laser comprising a gain medium, a pump for pumping the gain medium, a power circuit and an inertial load located between the power circuit and the pump. The power circuit may comprise a switching power amplifier for generating a pulse-...
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WO/2023/132042A1 |
An optical communication device (10) comprises: a high frequency substrate (11) that has a dielectric constant which is lower than the dielectric constant of a substrate formed from ceramic; a signal line (13) that is formed on a surface...
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WO/2023/124332A1 |
A laser projection device (1000), relating to the technical field of laser projection. The laser projection device (1000) comprises a light source assembly (1), an optical machine (2), and a lens (3). The light source assembly (1) is con...
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WO/2023/124344A1 |
A laser (10), comprising: a bottom plate (101), multiple light-emitting chip sets (103), at least one frame (102), at least one first electrically conductive layer (1023), and at least one second electrically conductive layer (1024). The...
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WO/2023/126359A1 |
A linear tunable laser comprising: a first tunable resonator, a second tunable resonator, an interferometer, an optical amplifier, and a power splitter. The first tunable resonator comprises a waveguide. The interferometer comprises a pl...
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WO/2023/128606A1 |
Disclosed is an apparatus for heat treating a substrate, the apparatus comprising: a process chamber in which a flat substrate to be heat treated is positioned; and a beam irradiation module which comprises a plurality of VCSEL devices, ...
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WO/2023/129474A1 |
Systems and methods can employ an emitter with adaptive active illumination in combination with a receiver that images a field of view illuminated by the emitter. An example active illumination camera system may comprise a light source t...
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WO/2023/126202A1 |
:The invention provides a light generating system (1000) comprising a first light generating device (110), a second light generating device (120), a third light generating device (130), a luminescent material (200), and a control system ...
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WO/2023/126155A1 |
The invention relates to an encapsulated optoelectronic component having a housing and at least one optoelectronic component, which is arranged in a cavity which is formed by a main element and is covered on an upper side by a cover elem...
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WO/2023/128607A1 |
Disclosed in the present invention is an apparatus for heating a flat substrate comprising: a module support plate having a plurality of unit module areas on the upper surface thereof; a plurality of VCSEL modules having a plurality of V...
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WO/2023/127036A1 |
A laser diode (2) and a modulator (3) are provided to a semiconductor substrate (1). The modulator (3) has a modulator electrode (8) and modulates laser light emitted from the laser diode (2). A plurality of lead-out electrodes (9) are l...
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WO/2023/118949A1 |
The present invention discloses an narrow linewidth and frequency tunable cat-eye external cavity diode laser comprises a laser diode emitting source configured to emit a light beam within an optical path; a first deflector collimating l...
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WO/2023/119366A1 |
This semiconductor laser (10) comprises, in the following order, a waveguide structure equipped with a first semiconductor layer (112), an active layer (113), and a second semiconductor layer (114), a p-type semiconductor layer (115_1) a...
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WO/2023/122711A1 |
An optical engine having an optically transparent substrate with a lens on a first major surface and an optoelectronic element on an opposed second major surface is described. The optical engine has a sealed optical path and is capable o...
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WO/2023/120587A1 |
This microlens array comprises: a plurality of first lenses each having a pick height no less than a first pick height; and a second lens having a pick height lower than the first pick height. In addition, the microlens array includes: a...
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WO/2023/119363A1 |
This light-emitting device is provided with: a wave guide-type light-emitting element (102) formed on a cladding layer (101); a core (104) formed on the cladding layer (101) and constituting a port (103) opposite to an output port of the...
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WO/2023/117592A1 |
The invention relates to a laser component (20) comprising at least one first laser diode (21) and at least one second laser diode (22), at least one optical element (23) having an entry surface (24) and an exit surface (25), and a monol...
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WO/2023/118305A1 |
A method for monitoring an optical signal (15) extracted from an optical cavity (42), such as a laser cavity (22), comprising the steps: - receiving at least a portion of the optical signal (15) as an incident signal (1); - converting th...
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WO/2023/117718A1 |
According to a first aspect, the present disclosure relates to distributed feedback (DFB) laser comprising a planar substrate (101); a laser section (110) comprising a front facet (111), an active layer (102) substantially parallel to th...
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WO/2023/117232A1 |
Disclosed is a semiconductor laser (1) with a vertical emission direction (11), comprising: - a first active region (20) and a first photonic crystal (25), wherein during operation of the semiconductor laser (1), first radiation emitted ...
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WO/2023/115926A1 |
A semiconductor structure and a preparation method therefor. The semiconductor structure comprises: a semiconductor substrate layer (1); an N-type waveguide structure (2), which is located on the semiconductor substrate layer (1); and an...
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WO/2023/119768A1 |
A laser diode device (100) comprises: a substrate (10); a pedestal (16); a laser diode chip (20); and a cover (30). The substrate has a base material (11) that includes a first main surface (11a) and a second main surface (11b) opposite ...
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WO/2023/117355A1 |
The invention relates to a photonic semiconductor laser having the following features: - an epitaxial semiconductor layer sequence (1) having an active layer (2) which is designed to generate electromagnetic radiation of a first waveleng...
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WO/2023/115381A1 |
A method for realizing single-exciton gain in semiconductor nanocrystals by using circularly polarized lasers, relating to the technical field of lasers. The method comprises the following steps: preparing a thin film sample from semicon...
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WO/2023/119367A1 |
A semiconductor laser (10) according to the present invention comprises: a waveguide structure that is provided with a first semiconductor layer (112), an active layer (113), and a second semiconductor layer (114) in the stated order; a ...
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WO/2023/120277A1 |
An organic electroluminescent element according to the present invention comprises a compound represented by formula (1).
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WO/2023/118389A1 |
The invention provides a frequency comb laser device comprising a laser cavity having an optical gain material for coupling light to a waveguide comprising a dispersive material; a reflector at the end of the optical gain material and a ...
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WO/2023/119364A1 |
This optical device comprises: a semiconductor layer (102) which is constituted by a group III-V compound semiconductor and which is formed on a cladding layer (101); and a light-receiving element (152) which is formed on the semiconduct...
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WO/2023/110389A1 |
The invention relates to a method for producing a diode laser having a laser bar (3), wherein a metallic layer (24) is used which has a nub structure with raised places (26) and which is located between the n-side (10) of the laser bar a...
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