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WO/2023/216409A1 |
A thermally tuned laser chip and a manufacturing method therefor. The thermally tuned laser chip comprises a substrate (1), and multiple functional layers (2) that are sequentially grown on the substrate (1), wherein: a ridge waveguide o...
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WO/2023/216735A1 |
A high-speed directly modulated semiconductor laser device and a preparation method therefor. The semiconductor laser device comprises an optical waveguide (1) and an optical grating (2), which is formed by means of a one-step etching pr...
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WO/2023/219132A1 |
Provided is a semiconductor laser element (1) comprising a semiconductor laminated structure (20) that is formed on one surface a substrate (10), a first coating film (31) that is formed on an end surface (20F) on the front side of the s...
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WO/2023/216234A1 |
An electro-absorption modulated laser chip and a manufacturing method therefor, relating to the technical field of semiconductor photoelectric emission, and capable of solving the problems that signal distortion is caused by light crosst...
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WO/2023/218782A1 |
This light source device comprises: a light source that outputs light; a reflection unit (spatial optical modulator) that has an input part for a control signal and that is configured to be able to control a reflection angle distribution...
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WO/2023/217120A1 |
Provided in the present application is a multi-mode laser apparatus, which is applied in the field of optics. The multi-mode laser apparatus comprises a multi-mode laser device, a mode scrambler, a mode demultiplexer and Y Bragg gratings...
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WO/2023/218005A1 |
The present invention relates to a broad-area diode laser, BAL, with an integrated p-n tunnel junction. More particularly, the present invention relates to a high-performance broad-area diode laser in which, in order to improve the beam ...
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WO/2023/213710A1 |
The invention relates to an optoelectronic semiconductor laser component (1) comprising a semiconductor body (10) with an n-type region (101), a p-type region (102), and an active region (103) which is designed to generate electromagneti...
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WO/2023/213481A1 |
The invention relates to an optoelectronic semiconductor component (1). The optoelectronic semiconductor element (1) comprises a semiconductor body (10) which is provided to emit electromagnetic radiation in a main emission direction (E)...
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WO/2023/214468A1 |
A multi-chip optical module (2) obtained by packaging a plurality of IC chips (201A, 201B, 201C) mounted on a single substrate (101) includes: a lid component (203) that forms a housing space (S) for the plurality of IC chips (201A, 201B...
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WO/2023/213328A1 |
A longitudinal carrier modulation type high-power semiconductor light-emitting chip and a preparation method therefor. The longitudinal carrier modulation type high-power semiconductor light-emitting chip comprises: an active layer (1); ...
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WO/2023/213480A1 |
The invention relates to an optoelectronic semiconductor component (1) comprising a semiconductor body (10) with an n-type region (101), a p-type region (102), and an active region (103) which is designed to emit electromagnetic radiatio...
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WO/2023/215626A1 |
A system for eye tracking is disclosed. The system may detect illumination including a first wavelength emitted from one or more illumination sources. The illumination may propagate along a waveguide(s) to a termination node(s) associate...
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WO/2023/210676A1 |
A semiconductor light-emitting element (1) comprises an active layer (30), a P-type cladding layer (40), a contact layer (50), and an insulation film (60). A ridge (R) is formed in a region including the P-type cladding layer (40) and th...
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WO/2023/210550A1 |
In the present invention, partial damage to a light source is detected. A light source drive device according to the present disclosure has a light source control unit, and an abnormality detection unit. The light source control unit inc...
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WO/2023/208827A1 |
A method for operating a laser device (20) is provided, the method comprising providing an emitter structure (21) of the laser device (20) with a first amount of power by a driving circuit (22) of the laser device (20), wherein the emitt...
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WO/2023/206123A1 |
Disclosed in the present invention are a semiconductor laser and a display device thereof. The semiconductor laser comprises a first semiconductor layer, a second semiconductor layer, and an active layer located therebetween; a first wav...
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WO/2023/209939A1 |
An optical module according to the present invention is provided with: an optical semiconductor element (10) wherein an electrode pad (10b) is formed on the front surface; an insulating substrate (30) wherein electrode pads (30b, 30c) ar...
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WO/2023/211361A1 |
The present invention relates to an optical bench apparatus (100) for a heterogeneous laser integration. The optical bench apparatus (100) comprises a first chip (101) including a first substrate (102a), a first waveguide and an optical ...
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WO/2023/203661A1 |
This optical module comprises: a semiconductor laser (5); a light monitor (6) having a first light receiver (63) that receives laser light from the semiconductor laser (5), a light filter (64) that receives laser light from the semicondu...
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WO/2023/202779A1 |
A lidar apparatus includes a vibration means configured to apply vibrations to a laser part of a lidar sensor to provide sensor pitch variations of an amplitude modulo less than or equal to a resolution of the lidar sensor. The lidar app...
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WO/2023/203026A1 |
A semiconductor component (10) for emitting light comprising a main body (11), which has at least one mesa unit having at least one mesa portion comprising – arranged on a surface (18) of the main body (11) – an emission region (13) ...
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WO/2023/203774A1 |
A semiconductor laser device according to the present disclosure comprises: a stem; a thermoelectric element that is provided to a position which is on an upper surface of the stem and which is displaced to one side with respect to the c...
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WO/2023/204992A1 |
One example includes an atomic optical reference system. The system includes an optical system comprising a laser configured to generate an optical beam. The system also includes a vapor cell comprising alkali metal atoms that are stimul...
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WO/2023/202184A1 |
An optical module (100) and an optical communication device. The optical module (100) comprises a first housing (110), a second housing (120), an optoelectronic element (130) and a circuit board (140). The optoelectronic element (130) an...
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WO/2023/198225A1 |
A lateral optical mode control high power semiconductor device, a preparation method therefor, and a semiconductor packaging structure. The lateral optical mode control high power semiconductor device comprises: a semiconductor substrate...
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WO/2023/199645A1 |
Provided is a surface emission laser which can suppress structural complications and control a polarization direction. A surface-emission laser according to the present technology comprises a resonator including first and second struct...
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WO/2023/200169A1 |
A VCSEL-based optical device having a common anode and a plurality of insulated cathode structures, and an optical module are disclosed. According to one aspect of the present embodiment, provided are: a VCSEL having a common anode struc...
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WO/2023/198429A1 |
The invention relates to an optoelectronic device assemblage (17) having – a substrate body (14) with a plurality of optoelectronic components (15), and a housing body (4, 5) connected to the substrate body (14), or – a substrate (23...
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WO/2023/198604A1 |
A laser circuit (10) comprises a switched-capacitor circuit (110), a video digital-to-analog converter (23) and a laser (20) with a first and a second terminal (21, 22). The first terminal (21) of the laser (20) is coupled to the switche...
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WO/2023/198866A1 |
A method of operating an optoelectronic laser device comprising the steps of: providing the optoelectronic laser device (1) comprising at least one first and at least one second laser ridge (3, 4) arranged on a semiconductor substrate (2...
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WO/2023/199459A1 |
An optical semiconductor device (110) of the present disclosure is configured such that an effective refractive index is nc and a wavelength is λ, and the optical semiconductor device includes an anti-reflection film (10) on an end surf...
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WO/2023/199372A1 |
This DML driver (2) is configured from a PMOS transistor (M1p), an NMOS transistor (M1n), an inductor (L1), a resistor (Rin), and an optical waveform compensation function unit (20) connected between a source and a ground of the NMOS tra...
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WO/2023/198607A1 |
A laser circuit (10) comprises a video digital-to-analog converter (23), a laser (20) with a first and a second terminal (21, 22), a first supply terminal (11) which is coupled via the video digital-to-analog converter (23) to the first ...
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WO/2023/199660A1 |
The present invention provides: a nitride semiconductor light emitting element that has good quality; and a method for producing a nitride semiconductor light emitting element that has good quality. A nitride semiconductor light emitti...
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WO/2023/201378A1 |
An LBM package and method for packaging an LBM using a stamped metallic mirror array that folds light beams, correct beam shapes, fold and/or redirect beam propagations. The mirror array can be integrated or assembled inside an LBM to pr...
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WO/2023/198865A1 |
The invention relates to an optical phased array having a signal input for supplying useful light of a first wavelength, and to a first modulation input for supplying modulation light of a second wavelength. A first waveguide array, havi...
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WO/2023/198605A1 |
A laser circuit (10) comprises a temperature sensor (85), a temperature compensating circuit (86) having an input coupled to the temperature sensor (85), a video digital-to-analog converter (23) and a laser (20) with a first and a second...
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WO/2023/194828A1 |
A pulsed laser diode driver includes multiple resonant laser diode driver cells, each cell including an inductor having a first inductor terminal to receive a source voltage, a source capacitor coupled between the first inductor terminal...
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WO/2023/194100A1 |
The invention relates to a method for producing an optoelectronic component (1), said method having the following steps: - providing a carrier (2); - applying a plurality of semiconductor chips (3) to the carrier (2), wherein the semicon...
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WO/2023/195129A1 |
Provided is a synthesized light generation device that achieves a compact size, has high production efficiency, and has reduced manufacturing costs. This synthesized light generation device comprises: a base substrate (100); an optical...
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WO/2023/193975A1 |
The invention provides a housing cap (1) for an electronics component (130). The housing cap comprises a main body (10) with an opening (12) which is closed by a window (60). The window (60) is connected to the main body (10) using a com...
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WO/2023/189131A1 |
This semiconductor light emitting device comprises: a substrate that has a first principal surface on one side and a second principal surface on the other side; a plurality of via electrodes embedded in the substrate at intervals such th...
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WO/2023/187777A1 |
Systems subsystems and methods for controlling temperature of a laser diode (LD) stack including at least one LD bar of at least one LD emitter, for achieving a desired temperature of the LD stack and corresponding emission wavelength of...
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WO/2023/188826A1 |
[Problem] To provide a light-emitting device having excellent reliability. [Solution] A light-emitting device 10 comprises a first base body 20, wherein: the first base body 20 has a first substrate 21, light-emitting elements 22 which a...
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WO/2023/188967A1 |
This semiconductor laser device comprises a semiconductor substrate, a light emitting unit, a contact layer, an insulating film, and a first electrode. The contact layer has an electrode connection surface facing the Z direction. The ins...
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WO/2023/190278A1 |
[Problem] To accurately correct variations of light-emitting elements and light-receiving elements. [Solution] A light detection device comprising: a plurality of light-emitting elements each of which emits a first light pulse signal; a ...
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WO/2023/188534A1 |
This semiconductor laser device comprises: at least one laser element that emits a laser beam; a housing part that houses thereinside the at least one laser element; a gas supply part that supplies gas from outside the housing part; and ...
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WO/2023/184857A1 |
A laser system and a laser driving method. The laser system may comprise: a main control chip (110); a laser emitter (100), wherein the laser emitter (100) has a reference laser power value; a laser driving circuit (120), which is connec...
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WO/2023/188427A1 |
According to a semiconductor laser evaluating method of the present invention, in a current-to-optical output characteristic, which is a relationship between an injection current of a semiconductor laser and an optical output thereof, wh...
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