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WO/2023/052338A1 |
The invention relates to an edge-emitting laser diode which has a semiconductor hetero structure consisting of at least one active layer or layer sequence (4) between two wave-guiding semiconductor layers or layer sequences (3, 5) which ...
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WO/2023/053167A1 |
An optical semiconductor element comprising: a substrate (12); a mesa (14) formed on the substrate (12) and in which at least a part of a first cladding layer (16), an active layer (18), and a second cladding layer (20) are stacked in th...
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WO/2023/052760A1 |
An optical source comprises: a pump source operable to generate laser light at a first wavelength; a single mode optical fibre arranged to receive laser light at the first wavelength from the pump source, the optical fibre being fabricat...
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WO/2023/052053A1 |
The invention relates to an edge-emitting semiconductor laser diode, comprising the following features: - an epitaxial semiconductor layer stack (14) comprising an active one (15), in which during operation electromagnetic radiation is g...
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WO/2023/050592A1 |
A Powell prism (111), a linear laser device (11), a laser projection module (1) and a laser 3D camera, wherein the Powell prism (111) comprises a columnar prism body (1111), and a light-incident face (1112) of the columnar prism body (11...
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WO/2023/053484A1 |
Provided is a surface light-emitting element which enables a simplified configuration and in which a light emission wavelength is not constrained by a substrate used during production. A surface light-emitting element according to the ...
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WO/2023/052331A1 |
The invention provides a light generating system (1000) comprising m light generating devices (100) and a beam combiner body (500), wherein: the m light generating devices (100) are configured to generate device light (101), wherein the ...
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WO/2023/049139A1 |
A synthesizer is provided having a controller configured to receive a first signal. A digital-to-analog converter (DAC) is coupled to the controller and configured to generate a voltage bias based on the first signal. The voltage bias co...
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WO/2023/046431A1 |
A semiconductor light source (1) is disclosed. The semiconductor light source (1) comprises an optoelectronic semiconductor chip (2) configured to emit radiation (R), and a cover body (5) applied on the optoelectronic semiconductor chip ...
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WO/2023/046382A1 |
The invention relates to an optoelectronic device comprising - a transmitter (1) designed to emit electromagnetic radiation (2) and to be operated with an input voltage (UI), and - a receiver (3) designed to receive the electromagnetic r...
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WO/2023/046614A1 |
The invention relates to a method for generating a light-pulse sequence by means of at least two diode lasers (12, 14), comprising the steps of - generating an optical or electrical clock signal by generating a series of light pulses (20...
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WO/2023/047037A1 |
The invention relates to a semiconductor structure (150) for optoelectronic applications, comprising: - a first layer (10) made of a crystalline semiconductor material, said layer being placed on - an intermediate layer (50) including or...
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WO/2023/046473A1 |
In at least one embodiment, the optoelectronic semiconductor device (1) comprises: a carrier (2), a first semiconductor laser (31) configured to emit a first laser radiation (L1) and applied on the carrier (2), and a multi-mode waveguide...
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WO/2023/048007A1 |
The present invention comprises: a plurality of flat lead electrodes; a frame body which covers side parts of the plurality of lead electrodes and a separation part between the plurality of lead electrodes and has an opening that exposes...
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WO/2023/049297A1 |
Various semiconductor laser and optical amplifier designs and injection current control methods are disclosed that enable tailoring a distribution of the injection current along an active waveguide of the laser or the optical amplifier. ...
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WO/2023/045296A1 |
A pulse laser having a narrow pulse width, comprising a circuit substrate (2), a laser chip (3), capacitors (1), and a field effect transistor (4). The field effect transistor (4), the capacitors (1), and the laser chip (3) are all elect...
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WO/2023/046434A1 |
The invention relates to an integrated photonic chip (PIC) for generating at least one combined light emission. The integrated photonic chip (PIC) comprises a bank (LB) of lasers having different wavelengths, the bank being composed of a...
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WO/2023/048869A1 |
Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer including an insulating...
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WO/2023/046222A2 |
A beam shaping optical system for direct pumping of thin disk laser head with laser diode module. The present invention relates to a laser system. More particularly, the present invention relates to a diode pumped laser system. Even more...
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WO/2023/046373A1 |
An optoelectronic device is specified having – a transmitter (1) which is designed to emit electromagnetic radiation (2) and to be operated at an input voltage (UI), – a support (7) for the transmitter (1), said support (7) having a ...
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WO/2023/047130A1 |
A photonic device comprises a semiconductor substrate (136),an optical waveguide (104) formed over the semiconductor substrate, an etched facet (110) at an end of the waveguide, and a PECVD-deposited anti-reflection coating (117,119) dep...
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WO/2023/041283A1 |
The invention relates to an optoelectronic semiconductor component (1) comprising a semiconductor body (10) having a first region (101) with a first conductivity, a second region (102) with a second conductivity and an active region (103...
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WO/2023/041170A1 |
A compound transmitter structure (400) comprising: a substrate; an active waveguide structure comprising: a laser emitter (301) on a first area of the substrate; an optical modulator (302) on a second area of the substrate; and a monitor...
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WO/2023/040175A1 |
A vertical cavity surface emitting laser, comprising: light-emitting units (20) arranged in an array, wherein the light-emitting units arranged in an array are located on a surface of a substrate (10); a first passivation layer (40), the...
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WO/2023/042855A1 |
This semiconductor laser element (100) comprises: a semiconductor laser unit (1); a transition unit (2) which is adjacent to the semiconductor laser unit in a first direction (Y) and on which light emitted from the semiconductor laser un...
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WO/2023/041631A1 |
A driver circuit (10) is specified, comprising a first and a second supply terminal (11, 12), a first node (13), a discharging transistor (16) between the first node (13) and the first supply terminal (11) and a first number N of laser d...
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WO/2023/041673A1 |
The invention relates to an amplification device (20) configured to amplify an input signal (SE2), the device comprising: - a wavelength or frequency demultiplexer (22) configured to demultiplex the input signal (SE2) into N intermediate...
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WO/2023/042420A1 |
Provided is a surface light-emitting laser element capable of inhibiting an increase in driving voltage for performing switching for a surface light-emitting laser, irrespective of the size of a light-emitting region. The present techn...
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WO/2023/040256A1 |
A method for manufacturing a DFB laser having a deterministic grating coupling coefficient on the basis of a dielectric sidewall grating. The method comprises: S1, performing photoetching on a laser epitaxial substrate without an etching...
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WO/2023/042675A1 |
The present invention comprises: an n-type semiconductor layer formed on a first reflective mirror; an active layer made from multiple quantum wells formed on the n-type semiconductor layer; a final barrier layer formed on the final quan...
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WO/2023/041171A1 |
A compound laser structure comprising: a substrate; an active waveguide structure comprising: a laser emitter (301) on the substrate, the laser emitter (301) comprising a Bragg grating (318) on a first area of the substrate; and a monito...
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WO/2023/042461A1 |
This semiconductor light-emitting device is configured to have: a semiconductor light-emitting element (40) having at least one light-emitting region; a first accommodation part (10) on which the semiconductor light-emitting element (40)...
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WO/2023/041486A1 |
The invention provides amongst others a light generating system (1000) comprising a first light generating device (110), a second light generating device (120), and a luminescent material (200), wherein: (A) the first light generating de...
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WO/2023/035091A1 |
The present invention comprises a system which connects refrigerant gas cylinders to professional laser hair removal machines, replacing currently used refrigerant cylinders, and a connection device that allows several laser hair removal...
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WO/2023/035775A1 |
A wavelength locker (100), a tunable laser (200) and a wavelength locking control method. The wavelength locker (100) comprises an annular resonant cavity, a light input end (140), a first photoelectric detector (220), a second photoelec...
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WO/2023/037611A1 |
The present invention stabilizes a control signal for an element that supplies a drive current to a light-emitting element. According to the present invention, a drive device includes a switch element, a current-limiting element, a curre...
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WO/2023/037581A1 |
Provided is a surface-emitting laser having an oxidization constriction layer that is selectively oxidized isotropically. A surface-emitting laser according to the present technology comprises: a first multilayer reflecting mirror; a s...
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WO/2023/035740A1 |
A laser capable of reducing the difficulty of a wavelength tuning process, a fabrication method therefor, and a laser device. The laser comprises: an active light-emitting structure (100) used for emitting light; a silicon-based structur...
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WO/2023/038014A1 |
A light-emitting device comprising an optical waveguide package (100), a light-emitting element (10) positioned in an element mounting region (8), and a lid body (11) that covers the element mounting region. The optical waveguide package...
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WO/2023/037510A1 |
A wavelength locker according to the present disclosure comprises: a beam splitter for bifurcating input light into output light and bifurcated light; and a first monitor photodiode comprising a first reflective surface reflecting the bi...
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WO/2023/037039A1 |
Disclosed is an apparatus (100, 300, 400, 700, 500) for stacking and coating of very short cavity laser diode arrays (502, 602). The apparatus comprises an array holder fixture (102, 304, 406, 506, 702) to securely hold the very short ca...
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WO/2023/037604A1 |
This surface light emitting element comprises: a substrate that has a first surface and a second surface opposed to the first surface; an epitaxial growth layer that has a first semiconductor layer of a first conductivity type, an active...
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WO/2023/035549A1 |
A vertical cavity surface emitting laser and a preparation method therefor. In a same etching process, a first passivation layer (50) located above a side of an N-type ohmic layer (40) away from a substrate (10) is etched, and the first ...
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WO/2023/039288A1 |
A vertical cavity surface emitting laser (VCSEL) chip includes a structured light (SL) VCSEL array, and a fill VCSEL array. The SL VCSEL array includes a plurality of first VCSELs on a substrate. The fill VCSEL array includes a plurality...
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WO/2023/032904A1 |
A semiconductor laser module (10) comprises: a manifold (33) having a water channel (40) therein through which cooling water can be flown; a heatsink (11) disposed over the manifold (33); a first electrode disposed in a first region of t...
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WO/2023/033083A1 |
This optical device is provided, for example, with: a base; a light-emitting element which is provided on the base and which outputs laser light; multiple optical components which are provided on the base and which transmit laser light o...
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WO/2023/032504A1 |
This laser light emission device (10) comprises a first series connection body (DC1), a second series connection body (DC2), a capacitor (C1), and a second switch (Q2). The first series connection body comprises a coil (L1) and forward-c...
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WO/2023/033107A1 |
An optical waveguide package comprises: a substrate having a first surface; cladding that is located on the first surface, that has a second surface facing the first surface and a third surface located opposite the second surface, and th...
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WO/2023/030068A1 |
A laser projection device (1000), comprising a light source assembly (1), an optical machine (2) and a lens (3). The light source assembly (1) comprises a bottom plate (1011), a side wall (1012) and multiple light-emitting chips (102). T...
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WO/2023/032144A1 |
A DML driver (10) comprises: a PMOS transistor (M1p) having a gate connected to a bias voltage (V2), a source connected to a power supply voltage (V1), and a drain connected to an anode of a LD (1); a NMOS transistor (M1n) having a sourc...
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