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WO/2023/177719A1 |
A light emitting diode (LED) includes a semiconductor structure comprising at least one epitaxial layer that is configured to generate far-UVC light, and respective electrical contacts on first and second surfaces of the semiconductor st...
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WO/2023/175830A1 |
A semiconductor element (550) according to the present disclosure is characterized by comprising: an InP semiconductor substrate (101) of a first conductivity type; a multilayer semiconductor layer which is composed of a first semiconduc...
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WO/2023/175737A1 |
A compound semiconductor multilayer film (2–4) is formed on a compound semiconductor substrate (1) and has a ridge-shaped stripe (5) and a resonator end surface (6) that is a cleavage surface that is orthogonal to the long-side directi...
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WO/2023/174995A1 |
A light-emitting diode (100) is specified which comprises a semiconductor layer sequence (2) grown in a vertical direction and having an active layer (3), which is configured and provided to generate light (8) in an active region (5) dur...
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WO/2023/177119A1 |
The present invention relates to a dual modulation wavelength variable light source module, and more particularly, to a dual modulation wavelength variable light source module for electrically modulating the gain of an optical gain unit ...
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WO/2023/173738A1 |
An external optical injection locking laser, comprising a main laser (1), an input/output waveguide (3), and a slave laser (2) formed on a same substrate (9). The main laser (1) is configured to emit laser light into the input/output wav...
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WO/2023/178126A1 |
A tunable or swept laser architecture that is appropriate for swept source optical coherence tomography and other applications including spectroscopy employing a cat's-eye configuration with a preferably transmissive tilt tuned interfere...
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WO/2023/174669A1 |
A laser diode component (1) is described comprising a semiconductor layer stack (2) comprising - an active zone (4) for emitting laser radiation, - a radiation exit surface (7), where at least a part of the laser radiation exits the semi...
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WO/2023/174909A1 |
The invention relates to a laser source (1) for emitting multispectral light radiation (RLM) having a plurality of spectral lines separated by a determined spectral interval. The laser source (1) comprises a bank of tunable lasers (B), a...
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WO/2023/178275A1 |
The techniques described herein relate to a laser system, including: a plurality of fiber laser amplifiers; a beam combiner configured to combine laser light outputs from the plurality of fiber laser amplifiers; an optical delivery fiber...
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WO/2023/174573A1 |
A vertical emission cascade laser (10) comprising an in-plane waveguide formed by a lower cladding layer (14), active region layers (15) and an upper cladding layer (16). A disk-shaped side surface (33) laterally bounds the in-plane wave...
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WO/2023/175482A1 |
A surface emitting laser includes: a first reflector; a second reflector; a resonator between the first reflector and the second reflector, the resonator including an active layer; and a conductive layer. The resonator further includes: ...
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WO/2023/174717A1 |
The invention relates to a semiconductor component (10) for emitting light, comprising a main element (14) which has an emission region (18) for the light, the emission region being assigned a first mirror portion, a second mirror portio...
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WO/2023/174590A1 |
The invention relates to a photonic system (S) comprising a laser source (1) capable of emitting at least one multispectral light radiation. The photonic system comprises a photonic component (MRA1, MRA2) having a plurality of tunable op...
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WO/2023/174715A1 |
A method for providing a calibration number for optimizing an evaluation of a detection signal obtained from a self-mixing interference of a VCSEL (12) is proposed, including the steps of: – measuring (26) a threshold current at which ...
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WO/2022/226508A9 |
Provided are systems and methods for high-dimensional phase-locked microlaser arrays. In embodiments, systems and methods can comprise a main array of light sources resonating in a plurality of energy levels, including a fundamental mode...
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WO/2023/176308A1 |
The present invention, for example, increases the effective emission area of a light-emitting unit as much as possible. In this light-emitting device, a unit structure is formed of a plurality of light emission units. Each of the light...
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WO/2023/175827A1 |
The present invention comprises: a step for forming, on a semiconductor substrate (12), a first insulating film (20) having a first opening (20a); a step for forming, on the first insulating film (20), a first resist (24) having a second...
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WO/2023/176674A1 |
Provided are: a method for manufacturing a nitride semiconductor light-emitting element having good quality; and a nitride semiconductor light-emitting element having good quality. The method for manufacturing a nitride semiconductor l...
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WO/2023/171148A1 |
Provided is a surface-emitting laser capable of suppressing positional deviation between the center of a current constricting region and the center of a lens-shaped part in a plan view. The surface-emitting laser according to the prese...
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WO/2023/171629A1 |
A semiconductor light emitting element 1 comprises a semiconductor lamination 20, an electrode 16, and an electrode 17. The semiconductor lamination 20 includes an active layer 12 and a phase modulation layer 15. The phase modulation lay...
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WO/2023/171150A1 |
The purpose of the present invention is to provide a vertical resonator surface emission laser in which the optical output can be improved without increasing the operating voltage. The present invention provides a vertical resonator su...
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WO/2023/171450A1 |
In a second step, a function 213 of a real space after an amplitude distribution 211 is replaced with a target amplitude distribution 214 is converted into a function 223 of a wave number space including an amplitude distribution 221 and...
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WO/2023/172515A1 |
The system includes an optical resonator, a mount, and a fastener. The optical resonator is comprised of a material with a horizontal plane symmetry. The optical resonator includes a horizontal plane protrusion for mounting. The horizont...
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WO/2023/169739A1 |
The invention relates to a laser assembly (10). The laser assembly comprises an electrically contactable first waveguide layer (30), which has a first conductivity type, and a second waveguide layer (40), which has a second conductivity ...
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WO/2023/170188A2 |
A device includes a multiple-wavelength (e.g., dual wavelength) vertical-cavity surface-emitting laser (VCSEL) array including a first VCSEL set including one or more first VCSEL to emit first VCSEL radiation at a first wavelength, and a...
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WO/2023/170489A1 |
A surface-emitting laser device includes: a first reflector; a second reflector; and a resonator region between the first reflector and the second reflector. The resonator region includes: multiple active layers each having first crystal...
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WO/2023/170471A1 |
This invention concerns the design of an optical frequency comb, i.e. a laser whose spectrum consists of a series of discrete, equally spaced frequency lines, based on a quantum cascade laser (QCL), in particular to a waveguide design wh...
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WO/2023/168785A1 |
A nano Bessel laser beam emitter and a method for manufacturing the same. The nano Bessel laser beam emitter includes a first Bragg reflecting layer (100), a light-emitting layer (200) and a second Bragg reflecting layer (300), where the...
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WO/2023/165107A1 |
A laser radar, and a driving circuit and driving method therefor. The driving circuit comprises: a switch control unit, which is used for selectively controlling a light-emitting apparatus to emit light and to stop emitting light; a firs...
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WO/2023/164810A1 |
A laser emitter (10), a laser distance measurement device, a lidar, and a mobile platform. The laser emitter (10) comprises: a circuit board (13); a cover body (11), which is provided on a first surface of the circuit board (13) and form...
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WO/2023/166383A1 |
A pulsed laser diode driver includes a refresh circuit configured to generate a refresh current using a received input voltage. A current amplitude of the refresh current is controlled by the refresh circuit based on a voltage level of a...
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WO/2023/167076A1 |
[Problem] The purpose of the present invention is to provide a vertical cavity light emitting element which has high luminous efficiency and high output, and is capable of stably emitting light in a single mode. [Solution] A vertical cav...
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WO/2023/166545A1 |
A semiconductor element (100) of the present disclosure comprises: a semiconductor substrate (115); a first semiconductor layer (114) formed on the semiconductor substrate (115); an insulation film (113) formed on the first semiconductor...
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WO/2023/165693A1 |
An optical amplification device includes a semiconductor optical amplifier having an input path and an output path. The input path includes a first optical device and the output path includes a second optical device. At least one of the ...
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WO/2023/165072A1 |
A highly reliable low defect semiconductor light-emitting device and a preparation method therefor. The highly reliable low defect semiconductor light-emitting device comprises: a semiconductor substrate layer (100); an active layer (130...
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WO/2023/160865A1 |
The invention relates to an edge-emitting semiconductor laser diode comprising: - a substrate (1) having a first main face (6) and a second main face (7) opposite the first main face (6), - an epitaxial semiconductor layer stack (2) on t...
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WO/2023/163224A1 |
This optical receptacle comprises: a first optical surface (121) for allowing the entry of light emitted from a light-emitting element (113); a second optical surface (122) for allowing the light which has entered at the first optical su...
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WO/2023/163649A1 |
Various embodiments may relate to a laser device. The laser device may include a lattice structure defining a first laser cavity and a second laser cavity. The first laser cavity may be optically coupled to the second laser cavity via an...
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WO/2023/162839A1 |
In order to improve the luminous efficiency of an ultraviolet light-emitting element, ultraviolet light-emitting elements 100, 200 according to an embodiment of the present disclosure contain an AlGaN crystal or an InAlGaN crystal, and c...
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WO/2023/162929A1 |
A semiconductor laser element (10) is provided with: a first semiconductor layer of a first conductivity type; an active layer (23) that is arranged above the first semiconductor layer; a second semiconductor layer of a second conductivi...
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WO/2023/163890A1 |
Discretely tunable laser systems include a continuously tunable laser for outputting a beam tunable among selectable frequencies, the selectable frequencies are separated in frequency by discrete frequency intervals, the discrete frequen...
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WO/2023/163230A1 |
Provided is a laser diode that relates to the reduction of an oscillating threshold current. The laser diode comprises a nitride semiconductor substrate containing Al, and a semiconductor layering part disposed on the nitride semiconduct...
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WO/2023/160774A1 |
A dummy light module comprising a dual semiconductor optical amplifier, SOA, light source configured to emit two substantially identical light emissions, where each light emission has a first polarization, a polarization rotator to rotat...
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WO/2023/162505A1 |
The main purpose of the present invention is to provide a semiconductor device for enhancing adhesion between a semiconductor substrate and a resin material. The present technology provides a semiconductor device (10) comprising: a fir...
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WO/2023/160589A1 |
A semiconductor laser (1000, 1001, 1002, 1003, 1004, 1005, 1006, 1007, 1000a, 1000a1, 1000a2, 1000a3, 1000b, 1000b1, 1000b2, 1000b3, 1000b4, 1000b, 2400), comprising a semiconductor stack (10), a first electrode structure, a second elect...
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WO/2023/162463A1 |
The present invention increases reliability of connection in a light-emitting device connected to a laser driver. The light-emitting device comprises a solder wetting layer, an adhesion layer, and a solder barrier layer. In the light-e...
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WO/2023/162488A1 |
Provided is a surface emitting laser that has a light trapping structure and with which it is possible to reduce manufacturing cost. The present technology provides a surface emitting laser comprising a first and a second reflecting mi...
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WO/2023/158541A1 |
A semiconductor optical device (100) includes a first facet (110) bounding a first end of the semiconductor optical device (100). The semiconductor optical device further includes a waveguide (101) having a first end proximate the first ...
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WO/2023/157269A1 |
In the present invention, an optical module (1) comprises: a first variable reflectance mirror (21); a periodic wavelength filter (22); a wavelength spectral filter (23); gain media (24-1 to 24-n) provided for each wavelength, having mut...
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