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WO/2024/015852A1 |
A spectroscopy system comprises a tunable laser including a gain chip, a collimating lens for collimating light from the gain chip, an end reflector, a focusing lens for focusing the collimated light on the end reflector, a thin film ban...
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WO/2024/014140A1 |
Provided is a surface emitting laser that is easily manufactured and is capable of simultaneously achieving lower resistance and higher light emission efficiency. The present technology provides a surface emitting laser comprising a re...
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WO/2024/015690A1 |
A laser assembly (10) includes a substrate (22); a plurality of spaced apart, lasers (20) grown on the substrate (22); and an electrical connector assembly (14). The lasers (20) are individually tested to identify if the tested lasers (2...
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WO/2024/013948A1 |
In the present invention, an initial setting circuit (11) holds an initial setting value corresponding to a preset target light amount of a semiconductor laser element (2). A differential amplifier (17) acquires, from a first optical det...
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WO/2024/012895A1 |
The optoelectronic semiconductor component (1) comprises a semiconductor body (2) having an active zone (23) and segments (3, 4), as well as a shielding structure (5). Two adjacent segments (3, 4) are separated by a trough (6) that penet...
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WO/2024/010847A1 |
An apparatus comprises an optical cavity formed on a substrate and defining a round-trip optical path, an interface positioning at least a portion of a gain medium to provide an active portion of the round-trip optical path over which th...
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WO/2024/009337A1 |
A multimode laser (1) is characterized by comprising: a semiconductor amplifier (2); and a laser resonator (7) formed between the semiconductor amplifier (2) and a loop mirror (6) that is composed of a waveguide formed on a semiconductor...
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WO/2024/008092A1 |
A table-lookup-type multi-band pulsed light parameter adjustment control system and method. The control system comprises: a multi-band light parameter setting module, a control module, a semiconductor light source drive module, a multi-p...
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WO/2024/008740A1 |
The invention relates to a semiconductor laser chip (101) comprising: * A substrate (105) comprising: - two side faces (107), - a lower face (109), and - an upper face (108); * at least two semiconductor lasers (102), these two lasers (1...
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WO/2024/008937A1 |
The invention relates to a device and a method for stabilizing the frequency of a laser, in particular a device and a method for stabilizing the frequency of a laser on the basis of the spectroscopy of a temperature-stabilized volume Bra...
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WO/2024/009822A1 |
The purpose of the present disclosure is to provide a metamaterial that is more practical and more useful. The present disclosure provides a metamaterial that has a structure in which structural units having air holes are arranged and ...
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WO/2024/005276A1 |
The present invention relates to a method for forming a multi-layered thin film in which a first thin film and a second thin film are alternately deposited on top of a flat substrate through an epitaxy process while the flat substrate is...
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WO/2024/004458A1 |
A light-emitting element drive circuit (21) comprises a first switch (SW1), a second switch (Q1), and a resonance capacitor (Cr1). A first end of the first switch is configured to be connected to a first end of a light source (LD1). The ...
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WO/2024/001437A1 |
An FMCW lidar based on chip integration. An external-cavity tunable laser (A) is used, the laser being formed by the hybrid integration of the following: a light-emission gain chip (100); a first optical waveguide (201), a second optical...
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WO/2024/005129A1 |
In order to provide a THz-QCL element which takes advantage of the characteristics of a ZnO-based semiconductor material, the present disclosure provides a quantum cascade laser element which has a semiconductor superlattice structure (a...
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WO/2024/000612A1 |
Disclosed in the present invention is a semiconductor laser, comprising: a light source module for outputting a single-mode seed light source; an optical wave beam-splitting waveguide chip for splitting the seed light source into a singl...
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WO/2024/002906A1 |
A VCSEL (10) having a main body (12), which has a resonator (14) for forming a particular laser mode, and which has an inner Bragg mirror and a coupling-out mirror which is adjacent to an outer face (16) of the main body (12), wherein an...
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WO/2024/000964A1 |
An optical module (200), comprising a light emitting assembly (500). The light emitting assembly (500) comprises a TEC (511b) and a tube base (510b); the TEC (511b) comprises a first substrate and a second substrate, the first substrate ...
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WO/2024/004677A1 |
This semiconductor laser element comprises: a semiconductor laminate that emits a laser beam; an emission-side protective layer disposed on a laser beam emission side end surface of the semiconductor laminate and having a first end surfa...
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WO/2024/003969A1 |
A compound represented by Formula (1) has excellent lasing properties. R1 and R2 represent an alkyl group; Het1 and Het2 are represented by Formulae (2) to (4); n1 and n2 are 1 to 5; and G1 and G2 represent H or a substituent.
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WO/2023/247720A1 |
A light-emitting semiconductor device (10) comprises a semiconductor layer stack (105) comprising a first semiconductor layer (110) of a first conductivity type, an active zone (115) for generating electromagnetic radiation, and a second...
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WO/2023/248779A1 |
The objective of the present invention is to reduce the size of a lighting device, for example. This lighting device comprises: a plurality of light emitting units which are arranged in an array, and each of which emits substantially p...
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WO/2023/249407A1 |
A lidar device according to the present invention may comprises: a transmission module comprising a laser output array and transmission optics, the laser output array comprising a first laser output sub-array, and the first laser output ...
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WO/2023/249560A1 |
A semiconductor vertical cavity surface emitting laser (VCSEL), the VCSEL comprising a first mirror region forming a lower distributed Bragg reflector and a second mirror region forming an upper distributed Bragg reflector, the upper dis...
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WO/2023/247377A1 |
The invention relates to a laser device (10) with a laser bench (12), on which are attached a semiconductor laser (14) for emitting a laser light along a laser axis (16), a first optical element (181) for forming the laser light and a te...
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WO/2023/248983A1 |
This semiconductor light-emitting unit comprises a semiconductor light-emitting device and a heat-dissipating body that is attached to the semiconductor light-emitting device. The semiconductor light-emitting device is provided with a se...
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WO/2023/249025A1 |
The present invention relates to a side window cap that, on a substrate on which a light emitting element has been mounted, covers the light emitting element in a sealing manner, wherein: the cap has a cross sectional shape of an inverte...
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WO/2023/248366A1 |
A semiconductor optical integrated element according to the present disclosure is provided with: an InxGa1-xAsyP1-y layer (wherein 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1) which is formed on the outermost surface of a semiconductor multilayer bo...
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WO/2023/248915A1 |
A pair of mirrors (51 and 52) that bend the travelling direction of a laser beam by 90 degrees are disposed between a first laser module (LM1) and a second laser module (LM2). The pair of mirrors (51 and 52) have a shape that includes a ...
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WO/2023/248412A1 |
This wavelength-variable laser (10) comprises, in this order, a substrate (101), a waveguide layer, and cladding (104). Said laser further comprises: an active layer (103) disposed in a section of the waveguide layer; a wavelength select...
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WO/2023/246472A1 |
A laser projection module (10), comprising an illumination light source (11) and a micro-lens array (12), the micro-lens array (12) comprising a plurality of micro-lenses (12a), the plurality of micro-lenses (12a) being arranged at a fir...
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WO/2023/245907A1 |
The present disclosure relates to the technical field of semiconductors, and provides an anti-reflection laser and a preparation method therefor. The anti-reflection laser comprises a substrate, and a semiconductor layer and a conductive...
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WO/2023/248329A1 |
This semiconductor device comprises: a substrate (101) formed of a semi-insulating compound semiconductor; a first photoactive element (102) formed above the substrate (101); a second photoactive element (103) formed above the substrate ...
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WO/2023/248895A1 |
This semiconductor light emitting device is provided with a base, a conductive heat sink that is provided standing on the base, a first substrate and a second substrate that are mounted spaced apart from each other on the heat sink, a se...
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WO/2023/248654A1 |
Provided is a surface-emitting laser with which it is possible to obtain desired characteristics while suppressing the occurrence of structural failure. A surface-emitting laser according to the present technology comprises a resonator...
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WO/2023/247288A1 |
The invention relates to a laser diode component (1), comprising - at least one semiconductor layer stack (2); - at least one first contact structure (6), which has at least one first contact element (7); - at least one second contact st...
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WO/2023/247129A1 |
A surface emitting semiconductor laser diode is specified herein, comprising: - a semiconductor layer sequence (1) with a p-doped side (2), an n-doped side (3) and an active layer (4) configured for emitting electromagnetic radiation arr...
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WO/2023/248628A1 |
The purpose of the present invention is to suppress concentration of an electric current, light, etc., in an electric current confining region, thereby improving reliability. The present invention provides a light-emitting element in w...
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WO/2023/245908A1 |
A semiconductor laser and a preparation method therefor. The semiconductor laser is provided with an isolation trench (200c) at the position of an epitaxial layer (200) corresponding to an extended waveguide structure (250c), and the iso...
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WO/2023/241993A1 |
Disclosed is a VCSEL (10) for emitting laser light, having a main element (12) which has a mesa portion (14) comprising a stack of different layers (19) stacked in a stacking direction (18), wherein an emission region (22) from which the...
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WO/2023/243298A1 |
[Problem] To provide a vertical cavity surface-emitting laser element and an array of vertical cavity surface emitting laser elements having excellent luminous efficiency and reliability by using a GaAs substrate. [Solution] A vertical c...
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WO/2023/243518A1 |
A nitride-based semiconductor light-emitting device (100) comprising: an N-type cladding layer (102); an N-side guide layer (103); an active layer (104); a P-type cladding layer (108); and a P-side guide layer (upper P-side guide layer (...
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WO/2023/243435A1 |
The present invention includes: a first semiconductor layer provided on a translucent substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a photonic crystal layer that is include...
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WO/2023/243318A1 |
In this optical sensor for sensing an object by receiving reflected light from the object with respect to irradiation light with which a sensing area is irradiated, a light-emitting unit (1) for providing irradiation light by light emiss...
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WO/2023/241265A1 |
A chip packaging body, a photosensitive module, a laser emitting module and a lidar, relating to the technical field of photoelectric packaging. Directly packaging a photonic bare chip (110) to a circuit board (100) by means of a transpa...
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WO/2023/243509A1 |
The purpose of the present invention is to provide a vertical-resonator-type light-emitting element that has an extended service life and high efficiency, and a method for manufacturing the same, with which it is possible to suppress any...
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WO/2023/238942A1 |
Provided is a laser system comprising a plurality of laser light sources and a plurality of collimating lenses. The system is further provided with a collection lens configured to receive a laser beam output from the plurality of collima...
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WO/2023/238531A1 |
A semiconductor element according to the present invention comprises: a substrate; two or more electron-conductive layers which are sequentially stacked on the substrate and contain a group III nitride semiconductor, while having composi...
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WO/2023/238655A1 |
A semiconductor light emitting element (1) according to the present invention comprises: a substrate (10); a first cladding layer (30) of a first conductivity type, the first cladding layer (30) being arranged above the substrate (10); a...
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WO/2023/238429A1 |
In the present invention, a lower distributed Bragg reflection layer is disposed on a first surface of a semiconductor layer. An active layer is disposed on the lower distributed Bragg reflection layer. An upper distributed Bragg reflect...
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