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WO/2023/199660A1 |
The present invention provides: a nitride semiconductor light emitting element that has good quality; and a method for producing a nitride semiconductor light emitting element that has good quality. A nitride semiconductor light emitti...
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WO/2023/201378A1 |
An LBM package and method for packaging an LBM using a stamped metallic mirror array that folds light beams, correct beam shapes, fold and/or redirect beam propagations. The mirror array can be integrated or assembled inside an LBM to pr...
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WO/2023/198865A1 |
The invention relates to an optical phased array having a signal input for supplying useful light of a first wavelength, and to a first modulation input for supplying modulation light of a second wavelength. A first waveguide array, havi...
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WO/2023/198605A1 |
A laser circuit (10) comprises a temperature sensor (85), a temperature compensating circuit (86) having an input coupled to the temperature sensor (85), a video digital-to-analog converter (23) and a laser (20) with a first and a second...
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WO/2023/194828A1 |
A pulsed laser diode driver includes multiple resonant laser diode driver cells, each cell including an inductor having a first inductor terminal to receive a source voltage, a source capacitor coupled between the first inductor terminal...
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WO/2023/194100A1 |
The invention relates to a method for producing an optoelectronic component (1), said method having the following steps: - providing a carrier (2); - applying a plurality of semiconductor chips (3) to the carrier (2), wherein the semicon...
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WO/2023/195129A1 |
Provided is a synthesized light generation device that achieves a compact size, has high production efficiency, and has reduced manufacturing costs. This synthesized light generation device comprises: a base substrate (100); an optical...
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WO/2023/193975A1 |
The invention provides a housing cap (1) for an electronics component (130). The housing cap comprises a main body (10) with an opening (12) which is closed by a window (60). The window (60) is connected to the main body (10) using a com...
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WO/2023/189131A1 |
This semiconductor light emitting device comprises: a substrate that has a first principal surface on one side and a second principal surface on the other side; a plurality of via electrodes embedded in the substrate at intervals such th...
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WO/2023/187777A1 |
Systems subsystems and methods for controlling temperature of a laser diode (LD) stack including at least one LD bar of at least one LD emitter, for achieving a desired temperature of the LD stack and corresponding emission wavelength of...
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WO/2023/188826A1 |
[Problem] To provide a light-emitting device having excellent reliability. [Solution] A light-emitting device 10 comprises a first base body 20, wherein: the first base body 20 has a first substrate 21, light-emitting elements 22 which a...
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WO/2023/188967A1 |
This semiconductor laser device comprises a semiconductor substrate, a light emitting unit, a contact layer, an insulating film, and a first electrode. The contact layer has an electrode connection surface facing the Z direction. The ins...
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WO/2023/190278A1 |
[Problem] To accurately correct variations of light-emitting elements and light-receiving elements. [Solution] A light detection device comprising: a plurality of light-emitting elements each of which emits a first light pulse signal; a ...
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WO/2023/188534A1 |
This semiconductor laser device comprises: at least one laser element that emits a laser beam; a housing part that houses thereinside the at least one laser element; a gas supply part that supplies gas from outside the housing part; and ...
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WO/2023/184857A1 |
A laser system and a laser driving method. The laser system may comprise: a main control chip (110); a laser emitter (100), wherein the laser emitter (100) has a reference laser power value; a laser driving circuit (120), which is connec...
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WO/2023/188427A1 |
According to a semiconductor laser evaluating method of the present invention, in a current-to-optical output characteristic, which is a relationship between an injection current of a semiconductor laser and an optical output thereof, wh...
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WO/2023/188405A1 |
A vertical cavity surface emitting laser (VCSEL) includes a distributed Bragg reflector (DBR) including a first dielectric layer and a second dielectric layer alternately arranged in a first axial direction; and a semiconductor section i...
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WO/2023/188426A1 |
This semiconductor device comprises: a substrate (101) formed from a semi-insulating compound semiconductor; a first photoactive element (102) formed above the substrate (101); a second photoactive element (103) formed above the substrat...
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WO/2023/189231A1 |
Provided is a nonlinear conversion processing device capable of applying nonlinear conversion processing to a light signal directly at low electric power consumption and a high speed. This nonlinear conversion processing device compris...
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WO/2023/189523A1 |
This surface-emitting laser element is provided with: a light-transmissive substrate; an n-type semiconductor layer; an active layer; a p-type semiconductor layer; an air-hole layer which is a photonic crystal layer included in the n-typ...
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WO/2023/185784A1 |
A laser and a laser projection device, relating to the technical field of photoelectricity. The laser comprises: a frame (100); the frame (100) comprising a bottom plate (101) and an annular side wall (102) located on the bottom plate (1...
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WO/2023/191788A1 |
A laser transmitter component including a photonic integrated circuit substrate including a plurality of laser transmitters coupled to at least one optical output, the laser transmitter component configured to emit a light beam from one ...
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WO/2023/190277A1 |
[Problem] To make it possible to accurately correct unevenness in a light-emitting element or a light-receiving element. [Solution] This light detection device comprises: a plurality of light-emitting elements that each emit a first ligh...
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WO/2023/184378A1 |
A laser, a lidar and a movable platform. The laser comprises: a substrate, the substrate comprising a first pad and second pads; a laser diode array, the laser diode array comprising M laser diodes, the M laser diodes sharing an N pole, ...
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WO/2023/186358A1 |
The invention relates to a laser (10) comprising a semiconductor body (2) and a terminal structure (3), wherein - the semiconductor body (2) has a first waveguide (21), a second waveguide (22) and a recombination zone (23) located thereb...
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WO/2023/186864A1 |
A single-mode cascade laser (1) that will lase at a pre-specified lasing wavelength and how to manufacture such a laser. A buried-heterostructure waveguide (5) is terminated to a precisely specified length of ≤ 100 μm by dry etching i...
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WO/2023/186390A1 |
The invention relates to a surface-emitting semiconductor laser diode having an epitaxial semiconductor layer stack (10), the epitaxial semiconductor layer stack (10) comprising: - a first wave guide layer (1) and a second wave guide lay...
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WO/2023/189247A1 |
The present disclosure provides new and innovative VCSEL devices and systems. In an example, a VCSEL device comprises a cavity mirror with a curved mirror surface of a VCSEL and a radius of curvature (ROC) of the curved mirror surface th...
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WO/2023/190336A1 |
In the present invention, a light-emitting element comprises: a light-emitting body that includes a first-type semiconductor unit that has a first side surface and a first-type electrical conductivity, an active part positioned below the...
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WO/2023/189268A1 |
This light-emitting device comprises, for example: a condenser lens which receives input of an array of a plurality of light beams that travel in a first direction and are aligned at intervals in a second direction; and a light-emitting ...
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WO/2023/188115A1 |
A semiconductor device (100) according to the present disclosure comprises: a semiconductor substrate (20); semiconductor layers (21, 22, 23, 24, 25, 27) formed on the semiconductor substrate (20); identification pattern regions (15, 16)...
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WO/2023/179937A1 |
A laser device (20) is provided, the laser device (20) comprising at least one first ridge structure (21), and at least one second ridge structure (22), wherein the first ridge structure (21) is configured to emit laser radiation, the se...
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WO/2023/181716A1 |
Provided are a surface-emitting laser, a surface-emitting laser array, and an electronic device in which the reliability of a transparent conductive film is increased. The present technology provides a surface-emitting laser in which a...
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WO/2023/180550A1 |
The invention relates to a stacked laser assembly comprising a first laser device with a light outlet side and a semiconductor body forming an resonator and having an active zone and two main sides and substantially perpendicular lateral...
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WO/2023/180788A1 |
The present invention concerns a waveguide amplifier comprising: - at least one embedding cladding material or layer, and - at least one rare-earth ion implanted silicon nitride material or layer embedded in the at least one embedding cl...
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WO/2023/179967A1 |
The invention relates to an optoelectronic component, having: - a support (5) and at least two lasers (1, 2) which are arranged on the support (5), wherein - the surface area of a common beam outlet window (6) of the optoelectronic compo...
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WO/2023/181658A1 |
Provided is a surface-emitting laser that makes it possible to reduce series resistance without requiring mesa formation. A surface-emitting laser according to the present technology is provided with: a first structure (ST1) including ...
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WO/2023/182101A1 |
[Problem] To prevent deterioration in light emission characteristics due to heat. [Solution] A semiconductor light emitting device provided with: a light emitting part; a sealing member that has a transmitting portion which transmits the...
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WO/2023/182156A1 |
A semiconductor light-emitting device (1) is provided with: a base (2) having a wiring member (10); a semiconductor laser bar (3); and a solder (4) disposed between the wiring member (10) and the semiconductor laser bar (3). A surface of...
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WO/2023/180294A1 |
The invention relates to an optoelectronic semiconductor laser component (1) comprising a semiconductor body (10) having: an active region (101) designed to emit electromagnetic radiation; a decoupling facet (10A) and a rear facet (10B) ...
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WO/2023/181639A1 |
[Problem] To provide a light emitting device and a distance measuring device in which the wiring for a light emitting element can be structured in a preferable manner. [Solution] A light emitting device of the present disclosure comprise...
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WO/2023/179939A1 |
A laser device (20) is provided, the laser device (20) comprising at least one ridge structure (21) that is configured to emit laser radiation, a sense circuitry (23), a power source (27), and a current source (45), wherein the ridge str...
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WO/2023/183074A1 |
A system enables optical communication with direct conversion of the electrical signal into an optical signal with an array of optical sources. The use of the array of optical sources can eliminate the need for a large serializer/deseria...
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WO/2023/183203A1 |
Various embodiments provide apparatuses, systems, and methods related to a heat sink with one or more removable inserts. Respective inserts may include one or more fins that define one or more channels for flow of cooling fluid. The fins...
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WO/2023/180553A1 |
The invention relates to a stacked laser arrangement, comprising: a first laser device (2) having a light exit side and a semiconductor body which forms a resonator and has an active zone and two main sides and side faces arranged substa...
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WO/2023/180369A1 |
The invention relates to an optoelectronic module (1) comprising a first semiconductor component (11) on an installation face (21A) of a first support (21), a second semiconductor component (12), and a third semiconductor component (13) ...
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WO/2023/182832A1 |
The present invention relates to: an optical system-in-package (O-SIP) in which an edge-emitting light-emitting laser diode and a driver IC are included in the package, a planar light circuit (PLC) chip is assembled directly on a redistr...
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WO/2023/181685A1 |
A light-emitting device according to an embodiment of the present disclosure comprises: a first conducting layer (10) of a first conductivity type; a first high-resistance section (51) provided in the first conducting layer (10) and cont...
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WO/2023/176205A1 |
This light-emitting device comprises a substrate that has an upper surface, a light-transmissive member that has a lower surface that faces the upper surface of the substrate, a plurality of surface emission–type laser elements that ar...
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WO/2023/174616A1 |
A semiconductor laser component (100) is specified, having an n-doped semiconductor layer (1), an active layer (2) and a p-doped semiconductor layer (4), the active layer (2) being disposed between the n-doped semiconductor layer (1) and...
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