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WO/2023/083709A1 |
The invention relates to a component (10), comprising a semiconductor body (2) and at least one converter layer (3), wherein the semiconductor body (2) comprises at least one active region (20) having an active zone (23), the active zone...
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WO/2023/084711A1 |
A light module (1), in order to adjust the phase of light using a simple configuration, comprises: a light outputting means (20) for outputting light; a phase control means (17) for adjusting the phase of the light; and a detection means...
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WO/2023/084730A1 |
A wavelength-tunable laser device (10) comprises: a semiconductor photomultiplier (121) that outputs light on the basis of supplied power; a heater (124) that heats on the basis of the supplied power to control the wavelength of the ligh...
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WO/2023/085032A1 |
In order to provide a surface-emitting quantum cascade laser that facilitates an increase in output and from which a low-divergence operation can be expected, a PhC-QCL element 1000 of the present disclosure comprises: a first electrode ...
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WO/2023/084899A1 |
This light-emitting device 10 comprises a lead frame 12, a frame body 11 that has an opening 20 and is formed through integral molding with the lead frame 12, and an LED 28 that is connected to leads 12a, 12b of the lead frame 12 and is ...
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WO/2023/084848A1 |
A monitoring unit (3) comprises: a holder (3c); a light branching unit (3a) that branches laser light into first laser light and second laser light; and a light detecting unit (3b) that detects the second laser light. The light branching...
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WO/2023/085598A1 |
The present invention relates to a substrate processing apparatus and a substrate processing method, which can accurately measure temperature in even a low-temperature region, thus making it possible to efficiently manage heat. The subst...
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WO/2023/084415A1 |
The invention relates to a method for fabricating a semiconductor device. The method includes steps of providing a cavity structure, the cavity structure including a seed area including a seed material. The method further includes growin...
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WO/2023/083708A1 |
The invention provides a light generating system (1000) comprising n first vertical cavity surface emitting lasers (110) and a control system (300), wherein n≥1, wherein each of the n first vertical cavity surface emitting lasers (110)...
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WO/2023/079311A1 |
An ohmic contact structure has a compound semiconductor structure (400) comprising a compound semiconductor contact layer (120), a dielectric layer (118) on the compound semiconductor structure (400), a contact window (401) to access the...
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WO/2023/079934A1 |
[Problem] To prevent separation of the bonded portions of a first substrate having a light-emitting element and a second substrate, such as an LDD substrate. [Solution] A light-emitting device comprising a first substrate having a light-...
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WO/2023/079726A1 |
An optical semiconductor device (1) comprises: a semiconductor layer (2) in which a resonator (2r) is formed; a reflection film (2ce) covering both end surfaces (2fe) of the semiconductor layer (2); an electrode pad (31) formed of a stac...
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WO/2023/078931A2 |
A laser comprising a photonic component comprising a gain medium; and a waveguide platform comprising a Distributed Bragg Reflector, DBR, section. The photonic component is optically coupled to the waveguide platform. One or more thermal...
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WO/2023/079134A1 |
Method for generating random numbers, the method comprising driving, using a power source (105) and a control unit (151) controlling the power source, a surface emitting laser (101) in direct modulation mode, wherein the direct modulatio...
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WO/2023/078555A1 |
The invention relates to a Method for operating a frequency agile tunable self-injection locking laser system being formed by a laser device coupled to at least one optical resonator, wherein a diode current of a laser diode of the laser...
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WO/2023/078912A1 |
In at least one embodiment, the surface emitting semiconductor laser (100) comprises a semiconductor layer sequence (1) having an active layer (10) for generating laser radiation, a carrier substrate (2) on one side of the semiconductor ...
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WO/2023/072328A1 |
A laser device (10) comprising a vertical emission semiconductor laser component (12) for emitting laser radiation (13) and comprising a main body (14) having a first mirror portion (16), a second mirror portion (18), and an active layer...
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WO/2023/074436A1 |
The present invention reduces power consumption of this light emitting device. The light emitting device comprises a plurality of light emitting elements, a plurality of driving thyristors, a selection unit, a light emission current supp...
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WO/2023/074190A1 |
[Problem] To provide a semiconductor device and a distance measuring device in which it is possible to reduce parasitic inductance between a plurality of substrates. [Solution] A semiconductor device according to the present disclosure c...
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WO/2023/074182A1 |
This light-emitting device comprises: a first laser diode that has a plurality of emitters for emitting first laser beams; a second laser diode that has a plurality of emitters for emitting second laser beams and that is different from t...
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WO/2023/070799A1 |
A laser module and a laser device. The laser module comprises: a housing (10), a laser body (20), and a heat exchange assembly (30); the heat exchange assembly (30) comprises a heat exchange channel (31); the laser body (20) is provided ...
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WO/2023/072610A1 |
The present invention relates to a photonic device and more particularly to a photonic device that comprises a heterogenous laser source and heat-dissipating means that are configured to dissipate the heat liable to be emitted by the las...
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WO/2023/074285A1 |
[Problem] To provide a light emitting element array having a wiring structure that enables an increase in the response rate of light emitting elements. [Solution] A light emitting element array according to the present technology compris...
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WO/2023/076132A1 |
An optoelectronic device (20, 90, 120) includes a photonic integrated circuit (PIC) (24, 92, 94, 126), which includes a PIC substrate (34), having a first side mounted on a carrier substrate (26, 96), first electrical connection pads (70...
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WO/2023/070442A1 |
A packaging structure and method for a laser diode die, and a ranging apparatus and a movable platform. The packaging structure (300) comprises: a substrate (310), which comprises a first surface and a second surface opposite the first s...
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WO/2023/074228A1 |
A semiconductor laser device according to the present invention is provided with a light emitting unit. The light emitting unit comprises an active layer, and an n-type semiconductor layer and a p-type semiconductor layer, between which ...
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WO/2023/075498A1 |
Disclosed is a laser apparatus comprising: a laser diode for outputting laser light having a variable pulse pattern; a pre-amp optical unit configured to amplify the laser light output from the laser diode to a first energy level, the pr...
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WO/2023/074811A1 |
This semiconductor package comprises a substrate, a securing member, and a joining member that joins the substrate and the securing member. The substrate has: a base portion having a first upper surface; and a frame portion positioned on...
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WO/2023/067927A1 |
This light source module comprises a stem including a base plate, a light source, a lead terminal electrically connected to the light source, and a heatsink. The light source is mounted on the stem. The base plate has a first through-hol...
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WO/2023/066761A1 |
A semiconductor component (10) for emitting light (12), comprising: - a main body (14), having at least one mesa body (16) with an emission region (18) for the light (12), with which mesa body a first mirror portion, a second mirror port...
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WO/2023/067673A1 |
An optical semiconductor (100) comprises a semiconductor substrate (8) and a semiconductor structure part (30), which includes an optical waveguide layer (2), formed on the semiconductor substrate (8). The semiconductor structure part (3...
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WO/2023/069618A1 |
A laser assembly (10) includes: (i) a first laser subassembly (16) that includes a first laser (26a) that generates a first laser beam (26b); a second laser (26f) that generates a second laser beam (26g); and a first beam combiner (26j )...
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WO/2023/067890A1 |
Provided is a surface emitting laser capable of achieving a decrease in resistance while suppressing a decrease in reliability. The present technology provides a surface emitting laser including: a first structure including a first mul...
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WO/2023/069771A1 |
Methods for fabricating a vertical cavity surface emitting laser (VCSEL) using epitaxial lateral overgrowth (ELO). The ELO layers comprise island-like III-nitride semiconductor layers grown on a substrate using a growth restrict mask, wh...
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WO/2023/064310A1 |
Methods and devices for driving a laser diode are disclosed herein. An example method includes a boost regulator outputting a maximum boost voltage to drive a laser diode that is configured to output light within a wavelength range of 49...
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WO/2023/063103A1 |
This fluorescent device (1) comprises: a substrate member (10); and a wavelength conversion member (20) which is provided to the substrate member (10) and has a fluorescent part (21), wherein the substrate member (10) and the wavelength ...
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WO/2023/061911A1 |
The invention provides a light generating system (1000) comprising (a) first light generating device (110), (b) a first laser (2100), and (c) a second laser (2200), wherein:- the first light generating device (110) is configured to gener...
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WO/2023/061969A1 |
A circuit (105) for monitoring an amount of charge provided from a charge storage device (115) to at least one radiation-emitting element (110) during a drive cycle is disclosed. The circuit is configured to: determine a charge storage c...
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WO/2023/058353A1 |
[Problem] To provide: a light-emitting device that enables light emitted from a light-emitting element to enter a lens suitably; a manufacturing method for the light-emitting device; and a distance measurement device. [Solution] This lig...
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WO/2023/058217A1 |
This nanowire laser is constituted by: a nanowire (102) formed on top of a substrate (101); and a one-dimensional photonic crystal (103a) and a one-dimensional photonic crystal (103b) formed respectively at one end side and another end s...
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WO/2023/058405A1 |
The present invention comprises: a first semiconductor layer that is provided on a substrate; an active layer that is provided on the first semiconductor layer; a second semiconductor layer that is provided on the active layer and is of ...
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WO/2023/057493A1 |
The invention relates to a laser element module comprising a first laser module comprising a first laser element and a first capacitor, wherein the first laser element is coupled in series with the first capacitor; a second laser module ...
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WO/2023/059889A1 |
An external cavity diode laser has been developed to achieve a linear frequency chirp over a broad bandwidth using a silicon photonic filter chip as the external cavity. By appropriately chirping the cavity phase using the gain chip and/...
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WO/2022/258756A9 |
A semiconductor chip (LD) with a structured chip back side (RS) is specified, the chip back side being configured for electrical and thermal linking of the semiconductor chip (LD), the semiconductor chip (LD) having emitter regions (E) c...
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WO/2023/057495A1 |
A method for alignment of optical components of a projector (110) for illuminating at least one object (112) with at least one illumination pattern (114) comprising a plurality of illumination features. The projector (110) comprises at l...
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WO/2023/058216A1 |
The present invention comprises, on a substrate (101) that is formed of a semi-insulating compound semiconductor, a first optical element (141), a second optical element (142), and an optical waveguide (143) that optically connects the f...
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WO/2023/053046A1 |
An optical analyzer (1) and an optical analysis system (2) therefor. The optical analyzer (1) comprises a body (10), a rotating member (11), an optical test device (12), and a driving device (13), wherein the body (10) has an accommodati...
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WO/2023/050740A1 |
Disclosed in embodiments of the present application are a vertical cavity surface emitting laser (VCSEL) having a small divergence angle, a chip, and a light source for use in an LIDAR system. The laser comprises: a lower Bragg reflectin...
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WO/2023/050739A1 |
Disclosed in the embodiments of the present application are a VCSEL having a small divergence angle, and a chip and a light source for a LIDAR system. The VCSEL comprises: an active layer, and a lower Bragg reflection layer and an upper ...
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WO/2023/056274A2 |
Thermal management may in some cases improve the optical output of a semiconductor laser diode array. For example, providing gaps such as air gaps, at suitable locations may influence the temperature distribution of laser diodes in a las...
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