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WO/2023/248654A1 |
Provided is a surface-emitting laser with which it is possible to obtain desired characteristics while suppressing the occurrence of structural failure. A surface-emitting laser according to the present technology comprises a resonator...
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WO/2023/247288A1 |
The invention relates to a laser diode component (1), comprising - at least one semiconductor layer stack (2); - at least one first contact structure (6), which has at least one first contact element (7); - at least one second contact st...
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WO/2023/247129A1 |
A surface emitting semiconductor laser diode is specified herein, comprising: - a semiconductor layer sequence (1) with a p-doped side (2), an n-doped side (3) and an active layer (4) configured for emitting electromagnetic radiation arr...
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WO/2023/248628A1 |
The purpose of the present invention is to suppress concentration of an electric current, light, etc., in an electric current confining region, thereby improving reliability. The present invention provides a light-emitting element in w...
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WO/2023/245908A1 |
A semiconductor laser and a preparation method therefor. The semiconductor laser is provided with an isolation trench (200c) at the position of an epitaxial layer (200) corresponding to an extended waveguide structure (250c), and the iso...
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WO/2023/241993A1 |
Disclosed is a VCSEL (10) for emitting laser light, having a main element (12) which has a mesa portion (14) comprising a stack of different layers (19) stacked in a stacking direction (18), wherein an emission region (22) from which the...
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WO/2023/243298A1 |
[Problem] To provide a vertical cavity surface-emitting laser element and an array of vertical cavity surface emitting laser elements having excellent luminous efficiency and reliability by using a GaAs substrate. [Solution] A vertical c...
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WO/2023/243518A1 |
A nitride-based semiconductor light-emitting device (100) comprising: an N-type cladding layer (102); an N-side guide layer (103); an active layer (104); a P-type cladding layer (108); and a P-side guide layer (upper P-side guide layer (...
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WO/2023/243435A1 |
The present invention includes: a first semiconductor layer provided on a translucent substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a photonic crystal layer that is include...
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WO/2023/243318A1 |
In this optical sensor for sensing an object by receiving reflected light from the object with respect to irradiation light with which a sensing area is irradiated, a light-emitting unit (1) for providing irradiation light by light emiss...
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WO/2023/241265A1 |
A chip packaging body, a photosensitive module, a laser emitting module and a lidar, relating to the technical field of photoelectric packaging. Directly packaging a photonic bare chip (110) to a circuit board (100) by means of a transpa...
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WO/2023/243509A1 |
The purpose of the present invention is to provide a vertical-resonator-type light-emitting element that has an extended service life and high efficiency, and a method for manufacturing the same, with which it is possible to suppress any...
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WO/2023/238942A1 |
Provided is a laser system comprising a plurality of laser light sources and a plurality of collimating lenses. The system is further provided with a collection lens configured to receive a laser beam output from the plurality of collima...
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WO/2023/238531A1 |
A semiconductor element according to the present invention comprises: a substrate; two or more electron-conductive layers which are sequentially stacked on the substrate and contain a group III nitride semiconductor, while having composi...
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WO/2023/238655A1 |
A semiconductor light emitting element (1) according to the present invention comprises: a substrate (10); a first cladding layer (30) of a first conductivity type, the first cladding layer (30) being arranged above the substrate (10); a...
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WO/2023/238429A1 |
In the present invention, a lower distributed Bragg reflection layer is disposed on a first surface of a semiconductor layer. An active layer is disposed on the lower distributed Bragg reflection layer. An upper distributed Bragg reflect...
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WO/2023/238428A1 |
In the present invention, at least one mesa structure internally including a light emission portion is arranged on a first surface of a semiconductor layer. A heat transfer member formed of a heat transfer material is bonded to a second ...
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WO/2023/238923A1 |
The present invention comprises: a step for preparing a semiconductor substrate which is provided with a first substrate and a plurality of semiconductor parts that are formed in stripes on the first substrate by means of crystal growth;...
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WO/2023/236662A1 |
Chip integration of an external cavity semiconductor laser and a reflective semiconductor optical amplifier. An active RSOA chip (203, 232, 303, 403, 503, 603) and a passive photonic chip (206, 235, 308, 406, 507, 609) are butt-coupled a...
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WO/2023/238786A1 |
Provided is a light-emitting device capable of turning on a plurality of light sources with a simple configuration. This light-emitting device comprises: n (n>=2) light sources; n power supply circuits respectively provided to the n ligh...
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WO/2023/238621A1 |
Provided is a surface emission laser capable of reducing both series resistance and optical loss. A surface emission laser according to the present technology comprises: a first structure that includes a first reflecting mirror; a seco...
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WO/2023/236669A1 |
A hybrid integrated external-cavity diode laser device resistant to external optical feedback. The hybrid integrated external-cavity diode laser device is composed of an active gain amplification chip (201) and a passive photonic chip (2...
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WO/2023/234004A1 |
A laser light irradiation device (1) comprises a plurality of laser light sources (10), an optical fiber (30), and a coupling optical system (20). The coupling optical system (20) includes a reducing optical system (22). The reducing opt...
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WO/2023/234858A1 |
Various embodiments may provide a topological laser. The topological laser may include a photonic structure configured to generate a laser beam upon electrical pumping of the photonic structure. The laser beam may be based on photonic Ma...
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WO/2023/233525A1 |
Provided is an optical transmitter that has high manufacturing stability and reflection suppressing effect. This optical transmitter comprises a monolithic integration, on a single substrate, of: a distributed-feedback (DFB) laser which ...
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WO/2023/231353A1 |
A laser chip (600) preparation method, a laser chip (600), and an optical module (200). The method comprises: growing, on a substrate layer (610) of an InP material, a substrate (620) comprising an aluminum indium gallium arsenide (AlInG...
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WO/2023/233589A1 |
A temperature control module (4) is mounted on a metal stem (1). A support block (5) is mounted on the temperature control module (4). The back surface of a dielectric substrate (6) is bonded to a side surface of the support block (5). O...
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WO/2023/233541A1 |
A vertical cavity surface emitting laser includes an oxide substrate having a first face and a second face at an opposite side from the first face; a semiconductor section disposed on the first face; a dielectric filter layer disposed be...
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WO/2023/233850A1 |
Provided is a surface light emitting element having a conduction structure that electrically connects, with excellent electrical conductivity, an electrode and a second structure including a light emitting region, and that can suppress l...
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WO/2023/233531A1 |
Provided are an EA modulator (50) and an EA-DFB laser, the EA modulator including a low-dielectric material (51) between a signal electrode pad (17) and a GND electrode pad (16) and having a structure such that the occurrence of stepping...
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WO/2023/164039A9 |
A lithium niobate (LN) external cavity laser apparatus (10) includes a III/V gain element (14) and a Vernier mirror structure which includes two or more microresonators (18, 20) where: one or more of the Vernier microresonators are tuned...
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WO/2023/234306A1 |
This termination circuit substrate comprises a dielectric substrate, a ground conductor portion, a signal conductor portion, a first resistor portion, and a second resistor portion. The ground conductor portion includes, positioned in or...
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WO/2023/235339A1 |
Systems, devices, and methods for a laser diode assembly (102) including: a laser diode (120) configured to emit a laser beam (200); and a housing (124) configured to receive at least a portion of the laser diode (120), where the housing...
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WO/2023/233818A1 |
The present invention provides a surface light emitting element which has a current injection structure that is capable of suppressing vignetting and absorption of light. A surface light emitting element according to the present techno...
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WO/2023/233567A1 |
An optical device according to the present invention comprises a first semiconductor layer (104) and a second semiconductor layer (105), between which an active region (131) is sandwiched, and which are formed to be in contact with a lat...
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WO/2023/232950A1 |
The present invention relates to a single-photon source, a wafer comprising a plurality of single-photon sources, and a method for producing a single-photon source. The single-photon source comprises at least one waveguide portion, a qua...
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WO/2023/235333A1 |
Provided herein are apparatuses, systems, and methods for addressing an array. The apparatuses may comprise an array of spots of light and a beam deflector comprising a plurality of elements. Systems and methods may comprise using the ap...
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WO/2023/233778A1 |
This nitride light-emitting element comprises: a GaN substrate; an n-type semiconductor layer containing an n-type nitride-based semiconductor and arranged on the GaN substrate; a p-type semiconductor layer containing a p-type nitride-ba...
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WO/2023/227189A1 |
Described is a distributed feedback laser (400, 500), the laser comprising: a light emissive structure (601); and a waveguide (401, 402, 501, 502, 503) located so as to receive light from the light emissive structure (601), the waveguide...
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WO/2023/228268A1 |
This laser module (1) comprises a semiconductor laser (11) that oscillates using one circularly polarized light among right circularly polarized light and left circularly polarized light, and a quarter wavelength plate (15) that is dispo...
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WO/2023/227257A1 |
The invention relates to a method for the spectral positioning of a photonic system, the photonic system carrying out the steps of conditioning a control signal (V) in order to produce a digital control signal, carrying out a first step ...
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WO/2023/228346A1 |
The semiconductor optical integrated element according to one aspect generates and outputs laser light. The semiconductor optical integrated element comprises a laser-active layer, an optical modulation-active layer, an optical amplifica...
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WO/2023/225902A1 |
A transmitting module, a detection apparatus and a terminal device. The transmitting module comprises an array light source and an optical shaping assembly, wherein the optical shaping assembly comprises a spherical lens and/or an aspher...
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WO/2023/229017A1 |
A laser device comprising: a package (100) having a base (110) and a lens (130); and a laser oscillator (150) housed in the package (100). The base (110) has a first recessed portion (112) and a mounting surface (125) of a surface-mounti...
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WO/2023/228367A1 |
An optical semiconductor device according to the present disclosure comprises: a stem having a first surface and a second surface on the reverse side from the first surface; a semiconductor laser provided on the first-surface-side of the...
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WO/2023/228403A1 |
This optical device comprises a gain region (101) that constitutes a waveguide-type semiconductor laser and a waveguide-type optical modulation region (102) that modulates laser light from the semiconductor laser. The semiconductor laser...
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WO/2023/226610A1 |
A coherent array laser structure and a preparation method. The coherent array laser structure comprises an array light source, a first resonant cavity and a second resonant cavity, wherein a high-reflection area and a low-reflection area...
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WO/2023/228234A1 |
A semiconductor laser (100) comprises a ridge (5) that is formed in an n-type semiconductor substrate (1) and an embedded layer (25) that is embedded so as to cover both sides in an x direction perpendicular to a y direction, which is th...
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WO/2023/226808A1 |
Provided in the present disclosure is a polygonal microcavity chaotic laser, comprising a semiconductor microcavity (11), having a cross section of a regular polygon or of a regular polygon with arc edges, and used for forming total inte...
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WO/2023/228851A1 |
A protective case (1) comprises a protective cover (10) and a transparent plate (18). A bottom surface opening (10j) is provided in a first bottom surface (10a) of the protective cover (10). A front surface opening (10a) is provided in a...
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