SEMICONDUCTOR LASER DEVICE

WIPO Patent Application WO/2024/075594

A1

This semiconductor laser device comprises: a semiconductor laser element (11) and a semiconductor laser element (12); a reflecting mirror (71) that reflects first laser light emitted from the semiconductor laser element (11); and a reflecting mirror (72) that reflects second laser light emitted from the semiconductor laser element (12). The semiconductor laser element (11) has a light emitting point (11e). The semiconductor laser element (12) has a light emitting point (12e). When the optical axis of the first laser light entering the reflecting mirror (71) is a first optical axis, the optical axis of the second laser light entering the reflecting mirror (72) is a second optical axis, and a direction passing through the light emitting point (11e) and perpendicular to the first optical axis is a first direction, a first distance from the light emitting point (11e) to the first optical axis in the first direction and a second distance from the light emitting point (11e) to the second optical axis in the first direction are different from each other. A third distance from the light emitting point (12e) to the second optical axis in the first direction is greater than the first distance.

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HATA MASAYUKI
WATANABE KENTA
YAMANAKA KAZUHIKO
HAYASHI SHIGEO

PCT/JP2023/034932

April 11, 2024

September 26, 2023

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NUVOTON TECH CORPORATION JAPAN (JP)

H01S5/0225; H01S5/02253; H01S5/02255; H01S5/02325; H01S5/40

US20190252863A1	2019-08-15
JP2013235943A	2013-11-21
JP2001516473A	2001-09-25
JP2020194955A	2020-12-03
CN106785883A	2017-05-31
JP2020204734A	2020-12-24

NII, Hiromori et al. (JP)

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