Title:
NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/070351
Kind Code:
A1
Abstract:
A nitride-based semiconductor light-emitting device (100) emits light and comprises an N-type cladding layer (104), an N-side light guide layer (106), an active layer (107), an electron barrier layer (109), a P-type intermediate layer (110), a P-side light guide layer (111), and a P-type cladding layer (112). The average band gap energy of the electron barrier layer (109) is greater than the average band gap energy of the P-type cladding layer (112). The average band gap energy of the P-type intermediate layer (110) is greater than the average band gap energy of the P-side light guide layer (111), and less than the average band gap energy of the electron barrier layer (109). The average impurity concentration of the P-type intermediate layer (110) is lower than the average impurity concentration of the electron barrier layer (109) and higher than the average impurity concentration of the P-side light guide layer (111). The peak wavelength of the light emitted is less than 400 nm.
Inventors:
YOSHIDA SHINJI
TAKAYAMA TORU
OKAGUCHI TAKAHIRO
INOUE NOBORU
TAKAYAMA TORU
OKAGUCHI TAKAHIRO
INOUE NOBORU
Application Number:
PCT/JP2023/030351
Publication Date:
April 04, 2024
Filing Date:
August 23, 2023
Export Citation:
Assignee:
NUVOTON TECH CORPORATION JAPAN (JP)
International Classes:
H01S5/20; H01L33/32; H01S5/343
Domestic Patent References:
| WO2020158254A1 | 2020-08-06 |
Foreign References:
| JP2009158955A | 2009-07-16 | |||
| JP2008047688A | 2008-02-28 | |||
| JP2000091705A | 2000-03-31 | |||
| JP2021002575A | 2021-01-07 | |||
| JP2002335052A | 2002-11-22 | |||
| US20120076165A1 | 2012-03-29 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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