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WO/2024/091314A1 |
A chemical mechanical polishing apparatus has a platen to support a polishing pad, the platen having a recess, a carrier head to hold a surface of a substrate against the polishing pad and comprising a retaining ring to retain the substr...
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WO/2024/088942A1 |
One aspect of the invention relates to a method for producing a semiconductor stack (10), comprising, from a first silicon layer (11), referred to as a support layer, the following steps: - forming a silicon carbide layer (12), extending...
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WO/2024/089912A1 |
The purpose of the present invention is to provide a device and a method for manufacturing a semiconductor crystal wafer, the device and the method being capable of easily and reliably manufacturing a semiconductor crystal wafer of high ...
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WO/2024/090081A1 |
[Problem] To provide an amplifier circuit, a comparator, and a solid-state imaging device that can suppress RTS noise. [Solution] An amplifier circuit according to the present disclosure comprises: an active load; and a plurality of inpu...
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WO/2024/089762A1 |
A wafer placement table 10 comprises: a ceramic plate 20; a cooling plate 30; a bonding layer 40; recessed grooves 21d; plug placement holes 24; and porous plugs 50. The ceramic plate 20 includes: a wafer placement part 21 having a refer...
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WO/2024/089571A1 |
Provided is a semiconductor device having favorable electrical properties. This semiconductor device has a transistor, a first interlayer insulating layer, and a second interlayer insulating layer on the first interlayer insulating layer...
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WO/2024/090442A1 |
A hydrostatic gas bearing device according to the present disclosure comprises: a movable member; and a fixed member. A recess is located on a bearing surface of a base of the movable member or the fixed member, and an opening of a gas s...
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WO/2024/090934A1 |
The present invention provides a substrate processing method. In the substrate processing method according to an embodiment, a substrate is processed by supplying process gas into a chamber, wherein a part of the process gas is excited i...
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WO/2024/090226A1 |
[Problem] To provide a film forming apparatus which is capable of forming a film that has a uniform film thickness, while suppressing contamination of the working environment during the film formation. [Solution] A film forming apparatus...
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WO/2024/091305A1 |
The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing vol...
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WO/2024/090756A1 |
The present invention relates to a gate valve, and a method for fastening a sealing plate. The gate valve according to one embodiment of the present invention has a structure enabling convenient replacement if sealing, which is a consuma...
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WO/2024/086959A1 |
Tasks To provide a sensor that can detect both visible light and infrared light, which shows sufficient resolution of infrared images and sensitivity of visible-light images. Means of Solution The sensor includes a dual band pass filter,...
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WO/2024/090275A1 |
This film forming method comprises: a step for preparing a substrate which has a first film and a second film that is formed of a material different from the material of the first film in different regions of the surface; a step for supp...
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WO/2024/091455A1 |
Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. The present disclosure discloses pulsed radiation sources used to measure a broad range of low to high temperatures in...
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WO/2024/091819A1 |
A method to deposit a multi-layer stack for device applications includes implementing a model driven target selection for deposition. One or more targets may be procured with an initial stoichiometric composition or elemental purity. The...
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WO/2024/090276A1 |
The disclosed substrate support comprises: a support body; a base; and a ceramic member. The support body is configured so as to support an object thereupon. The object includes a substrate. The support body has a dielectric body and an ...
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WO/2024/091098A1 |
Provided are: cerium oxide particles for chemical mechanical polishing; and a chemical mechanical polishing slurry composition containing same. The characteristic cerium oxide particles of the present invention can be combined with a sur...
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WO/2024/091099A1 |
Provided are cerium oxide particles for chemical mechanical polishing and a chemical mechanical polishing slurry composition comprising same. A combination of the characteristic cerium oxide particles of the present invention with a cati...
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WO/2024/088211A1 |
Disclosed are a packaging structure, a preparation method for a packaging structure, and an electronic device. The disclosed packaging structure comprises a base body, a first chip, a first conductive member and a first filling adhesive ...
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WO/2024/089181A1 |
The invention relates to a piezoelectric-on-insulator (POI) substrate (130) comprising a carrier substrate (100), a trapping layer (102) on a free surface (104) of the carrier substrate (100), a piezoelectric layer (114), in particular a...
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WO/2024/082359A1 |
The present disclosure provides a semiconductor dicing method. The semiconductor dicing method comprises: providing a semiconductor stacking member and a first carrier which are stacked; removing the first carrier and retaining the semic...
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WO/2024/084957A1 |
Provided are: a polishing method which can maintain a sufficiently high insulating-film polishing rate and selectivity and can be sufficiently inhibited from causing polishing flaws; and a method for producing a semiconductor component u...
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WO/2024/082529A1 |
Disclosed are a semiconductor structure and a manufacturing method for the semiconductor structure. The semiconductor structure comprises: a first structural member and a second structural member, which are stacked and welded to each oth...
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WO/2024/085938A1 |
Systems and methods provide a solution for efficiently generating high density plasma for a physical vapor deposition (PVD). The present solution includes a vacuum chamber for a PVD process. The system can include a target located within...
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WO/2024/085214A1 |
The present invention comprises: a template substrate that includes a growth suppression region and a first seed region aligned in a first direction; and a first semiconductor part that is positioned above the template substrate and that...
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WO/2024/083493A1 |
A slit valve assembly for use in a vacuum chamber, for example in a vacuum chamber of a substrate processing system is proposed, wherein the slit valve assembly comprises a housing having sidewalls and at least one substrate transfer por...
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WO/2024/084621A1 |
In the present invention, an epitaxial layer (2) is formed on a substrate (1). A field effect transistor (3) is formed on the epitaxial layer (2). A drain pad (8) is formed on the epitaxial layer (2). The drain pad (8) is connected to a ...
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WO/2024/085489A1 |
A substrate processing apparatus according to an embodiment of the present invention comprises: a chamber provided with a side wall; a susceptor which is provided with an inclined side surface and on which a substrate is mounted in the c...
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WO/2024/085098A1 |
[Problem] When forming GSR elements directly onto an integrated circuit substrate (ASIC), it has been difficult to form micro-coils because of a) the method of forming inverted trapezoidal grooves, b) unevenness in the ASIC substrate sur...
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WO/2024/085024A1 |
The present invention is a lifting method for moving a fine structure that is formed on a supply substrate to a receiving substrate through laser lift-off, wherein a surface of the fine structure that faces the receiving substrate has a ...
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WO/2024/086295A1 |
A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer on the...
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WO/2024/086064A1 |
Semiconductor devices and methods of manufacturing the same are described. The method includes forming a source region and a drain region adjacent a superlattice structure on a substrate. The source region and the drain region comprise a...
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WO/2024/084757A1 |
A fluid supply system according to one aspect of the present disclosure supplies a fluid into a processing container in which a substrate is to be processed, said fluid supply system comprising: a processing fluid supply unit that suppli...
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WO/2024/086529A1 |
A method for fabricating a ferroelectric device includes providing a lower electrode layer on a substrate, forming a retention enhancement layer by oxidizing a surface of the lower electrode layer using a gas phase oxidation process, and...
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WO/2024/084366A1 |
Provided is a semiconductor device that enables miniaturization or higher integration. Provided is an oxide semiconductor suitable for the semiconductor device. Formed is an oxide semiconductor that has a small difference in thickness be...
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WO/2024/084725A1 |
A film forming apparatus (1) includes a chamber (101), a stage (190) that supports a substrate, a source gas supply unit that supplies source gas into the chamber (101), a high-frequency application unit (102) that generates plasma in th...
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WO/2024/085025A1 |
The present invention provides a reception substrate for transferring and receiving, through laser lift-off, a microstructure formed on a supply substrate. The reception substrate has a curable resin layer on the surface to which the mic...
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WO/2024/084778A1 |
The present invention achieves a high withstand voltage by means of an outer peripheral region having a small width. A semiconductor device according to the present invention comprises: a semiconductor substrate that has an element regio...
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WO/2024/082224A1 |
A III-nitride-based semiconductor packaged structure includes a lead frame, a first adhesive layer, a III-nitride-based die, a second adhesive layer, and a first conductive trace. The lead frame includes a die paddle and a lead. The firs...
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WO/2024/085083A1 |
Provided is a glass substrate that suppresses cracking during laser processing. A glass substrate (10) has a mark (100) provided on the surface thereof, and has a parameter (y) as stipulated in formula (1) of less than 1.4.
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WO/2024/037324A9 |
The present disclosure relates to the technical field of display, and provides a display substrate, a display device, and a display substrate manufacturing method, capable of solving the problem of short circuits between adjacent metal w...
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WO/2024/085055A1 |
The purpose of the present invention is to, when a substrate (or substrates) is (are) disposed on a substrate holder for holding the substrate(s), detect the position(s) of the substrate(s) disposed in various forms, in which, for exampl...
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WO/2024/084987A1 |
This substrate processing apparatus comprises: a processing vessel that has a carry in/out opening for substrates, and that accommodates the substrates; a lid that opens/closes the carry in/out opening; a gate opening/closing part that m...
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WO/2024/085410A1 |
The present invention relates to a plasma chamber and a wafer etching method using the plasma chamber. The plasma chamber of the present invention comprises: a housing having a reaction space therein in order to etch a wafer through plas...
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WO/2024/085213A1 |
The present invention comprises: a template substrate including a first seed region and a growth suppression region aligned in a first direction; and a first semiconductor part positioned above the template substrate. The first semicondu...
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WO/2024/085243A1 |
A semiconductor substrate comprising: a template substrate including a first seed region and a growth suppression region; and a first semiconductor part having a first base portion positioned above the first seed region and a first wing ...
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WO/2024/082403A1 |
A 3D memory array and a preparation method therefor, and an electronic device. The 3D memory array comprises a plurality of vertically stacked memory arrays and a plurality of vertically extending write word lines (120), wherein each mem...
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WO/2024/085915A1 |
The present disclosure relates to heat source arrangements, processing chambers, and related methods to facilitate deposition process adjustability. In one implementation, a processing chamber applicable for use in semiconductor manufact...
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WO/2024/082655A1 |
Provided in the embodiments of the present application are a high electron mobility transistor device and a manufacturing method therefor. The device (100) has a structural unit (10) or at least two structural units (10), which are repea...
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WO/2024/083019A1 |
The present invention relates to a cleaning composition, which specifically comprises: an alkaline compound, an alcohol amine, a corrosion inhibitor, a chelating agent and a solvent. The positive effects thereof lie in that residues left...
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