Title:
SEMICONDUCTOR SUBSTRATE, APPARATUS AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/085214
Kind Code:
A1
Abstract:
The present invention comprises: a template substrate that includes a growth suppression region and a first seed region aligned in a first direction; and a first semiconductor part that is positioned above the template substrate and that includes a nitride semiconductor. The first semiconductor part has: a first protruding portion that extends from the first seed region to a position nearer the upper side than the growth suppression region; a growth suppression film in contact with the first protruding portion; a first base section positioned above the first protruding portion; and a first wing section that is connected to the first base section, and is positioned over a gap, apart from the growth suppression region.
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Inventors:
KAMIKAWA TAKESHI (JP)
KOBAYASHI TOSHIHIRO (JP)
SUDA NOBORU (JP)
OGURA HIROYUKI (JP)
SEIDA MITSUNARI (JP)
KOBAYASHI TOSHIHIRO (JP)
SUDA NOBORU (JP)
OGURA HIROYUKI (JP)
SEIDA MITSUNARI (JP)
Application Number:
PCT/JP2023/037823
Publication Date:
April 25, 2024
Filing Date:
October 19, 2023
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
H01L21/205
Domestic Patent References:
| WO2022145454A1 | 2022-07-07 | |||
| WO2020105362A1 | 2020-05-28 | |||
| WO2022181686A1 | 2022-09-01 | |||
| WO2009009612A2 | 2009-01-15 |
Foreign References:
| JP2019064873A | 2019-04-25 | |||
| JP2017535051A | 2017-11-24 | |||
| JP2015508941A | 2015-03-23 | |||
| JP2002289539A | 2002-10-04 | |||
| JP2019502273A | 2019-01-24 |
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
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