Title:
SEMICONDUCTOR CRYSTAL WAFER MANUFACTURING DEVICE AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/089912
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a device and a method for manufacturing a semiconductor crystal wafer, the device and the method being capable of easily and reliably manufacturing a semiconductor crystal wafer of high quality. This method for manufacturing a SiC wafer that is a semiconductor crystal wafer comprises a groove machining step (STEP 100/fig. 1), a polishing step (STEP 110/fig.1), a cutting step (STEP 120/fig. 1), a first surface machining step (STEP 130/fig. 1), and a second surface machining step (STEP 140/ fig. 1), wherein, in the cutting step, before an SiC ingot 10 is cut in a slice shape by causing a plurality of wires 42 that are disposed in a plurality of grooves 11 to move forward while going around, a misalignment angle of the plurality of wires 42 relative to the plurality of grooves 11 is detected from a captured image that is captured by an imaging means 44 that is provided at a position that faces an ingot support means 43 that supports the SiC ingot 10 with the plurality of wires 42 interposed therebetween, said imaging means 44 capturing an image of the plurality of wires 42 that are disposed in the plurality of grooves 11, and an adjustment is made so that the misalignment angle becomes 0.
Inventors:
SAKAI SHINSUKE (JP)
CHIBA TETSUYA (JP)
CHIBA TETSUYA (JP)
Application Number:
PCT/JP2023/015046
Publication Date:
May 02, 2024
Filing Date:
April 13, 2023
Export Citation:
Assignee:
SUCCESS CO LTD (JP)
DRYCHEMICALS CO LTD (JP)
DRYCHEMICALS CO LTD (JP)
International Classes:
H01L21/304; B24B19/02; B24B27/06; B24B49/12; B24D5/00; B28D5/02; B28D5/04; B28D7/04
Foreign References:
| JP7045676B1 | 2022-04-01 | |||
| JP2005014126A | 2005-01-20 | |||
| JP2007245280A | 2007-09-27 | |||
| JP2001015458A | 2001-01-19 |
Attorney, Agent or Firm:
TAKITA SABURO LAW OFFICE (JP)
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