Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/084621
Kind Code:
A1
Abstract:
In the present invention, an epitaxial layer (2) is formed on a substrate (1). A field effect transistor (3) is formed on the epitaxial layer (2). A drain pad (8) is formed on the epitaxial layer (2). The drain pad (8) is connected to a drain electrode (5) of the field effect transistor (3). A reverse surface electrode (13) is formed on the reverse surface of the substrate (1) and is connected to a source electrode (6) of the field effect transistor (3). A wire (16) is bonded to the drain pad (8). A hollow (17) is formed in the substrate (1) directly below the drain pad (8). The hollow (17) is not formed directly below the bonded portion of the wire (16).
Inventors:
SUMINO TASUKU (JP)
SUZUKI SATOSHI (JP)
SUZUKI SATOSHI (JP)
Application Number:
PCT/JP2022/038906
Publication Date:
April 25, 2024
Filing Date:
October 19, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/812; H01L21/336; H01L21/338; H01L29/78
Domestic Patent References:
| WO2022102137A1 | 2022-05-19 | |||
| WO2020255259A1 | 2020-12-24 | |||
| WO2019150526A1 | 2019-08-08 |
Foreign References:
| JP2008226871A | 2008-09-25 | |||
| JP2002270822A | 2002-09-20 | |||
| JP2001267331A | 2001-09-28 | |||
| US20160343809A1 | 2016-11-24 |
Attorney, Agent or Firm:
TAKADA, TAKAHASHI & PARTNERS (JP)
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