Title:
POLISHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR COMPONENT
Document Type and Number:
WIPO Patent Application WO/2024/084957
Kind Code:
A1
Abstract:
Provided are: a polishing method which can maintain a sufficiently high insulating-film polishing rate and selectivity and can be sufficiently inhibited from causing polishing flaws; and a method for producing a semiconductor component using the polishing method. The polishing method comprises bringing a surface to be polished into contact with a polishing pad while supplying an abrasive material and polishing the surface by a relative motion of the two, wherein the abrasive material comprises abrasive grains and water and the polishing pad has a polishing layer including a polyurethane resin. The polyurethane resin contains a constituent unit derived from methylene diphenyl diisocyanate (MDI), the content of the methylene diphenyl diisocyanate is 30 mass% or higher with respect to the whole mass of the polishing layer, the polishing layer has a Shore A hardness of 90 degrees or less, the polishing layer has a water absorption of 5% or greater, and the surface to be polished includes an insulating film.
Inventors:
OTSUKA YUYA (JP)
AKAJI MASATOSHI (JP)
SHIBUYA TOMOHIRO (JP)
AKAJI MASATOSHI (JP)
SHIBUYA TOMOHIRO (JP)
Application Number:
PCT/JP2023/036045
Publication Date:
April 25, 2024
Filing Date:
October 03, 2023
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
B24B37/24; B24B37/00; C09G1/02; C09K3/14; H01L21/301; H01L21/304
Attorney, Agent or Firm:
IEIRI Takeshi (JP)
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