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Title:
CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
Document Type and Number:
WIPO Patent Application WO/2024/091099
Kind Code:
A1
Abstract:
Provided are cerium oxide particles for chemical mechanical polishing and a chemical mechanical polishing slurry composition comprising same. A combination of the characteristic cerium oxide particles of the present invention with a cationic polymer and a nitride film polishing inhibitor leads to the provision of a chemical mechanical polishing slurry composition that maximizes the silicon oxide film/nitride film selectivity ratio for an STI polishing process while enhancing the polishing speed of the oxide film, and a method for manufacturing semiconductor devices utilizing same.

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Inventors:
LEE JEONG HO (KR)
KIM SEOK JOO (KR)
Application Number:
PCT/KR2023/017049
Publication Date:
May 02, 2024
Filing Date:
October 30, 2023
Export Citation:
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Assignee:
SOULBRAIN CO LTD (KR)
International Classes:
C09G1/02; C01F17/235; C09K3/14; H01L21/306; H01L21/3105
Foreign References:
KR20220029512A2022-03-08
KR20130096393A2013-08-30
US20150102010A12015-04-16
US20170081552A12017-03-23
KR20020007607A2002-01-29
Attorney, Agent or Firm:
JIDAM IP LAW FIRM (KR)
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