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WO/2024/089742A1 |
A control unit of the present invention (a substrate processing device which performs processing of removing a coating attached to a substrate) processes a substrate (W) by supplying an ozone gas into a chamber (32) in a state where a fi...
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WO/2024/091688A1 |
Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a blocking layer of molecules is used to achieve selective epitaxial deposition. In one implementation, a method of proc...
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WO/2024/087773A1 |
A three-side conveyor equipment for silicon wafers is provided, including an insertion container. A bottom conveyor belt and two side conveyor belts are arranged in the insertion container, the two side conveyor belts are arranged opposi...
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WO/2024/091601A1 |
The present disclosure generally relates to methods for forming silicon nitride layers and silicon nitride structures on substrates. In an embodiment, the method includes positioning a substrate having at least one feature thereon in a p...
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WO/2024/089182A1 |
The invention relates to a piezoelectric-on-insulator (POI) substrate (130) comprising a carrier substrate (100) comprising a trapping layer (102) on a free surface (104) of the carrier substrate (100), a piezoelectric layer (106), an in...
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WO/2024/090433A1 |
Provided are an information processing method, a computer program, and an information processing device that can be expected to effectively use data obtained from a target device. In an information processing method according to an embod...
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WO/2024/091424A1 |
Methods and systems measuring structural parameters characterizing a measurement target based on changes in measurement signal values and estimated changes in electrical properties, optical properties, or both, of the measurement target ...
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WO/2024/087334A1 |
Provided in the present invention are an interposer structure and a manufacturing method therefor. The manufacturing method comprises: providing a substrate; forming first open holes, and filling the first open holes with first conductiv...
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WO/2024/091478A1 |
Method of forming a semiconductor device are provided, In some implementations, the method includes positioning a substrate into a processing chamber, the substrate having an exposed non-crystalline surface and an exposed crystalline sur...
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WO/2024/086970A1 |
The present invention provides a fan-out type package structure and a preparation method therefor. The fan-out type package structure may comprise an encapsulation layer, and an antenna radio frequency module assembly and one or more ele...
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WO/2024/090268A1 |
This film formation method comprises the following (A) to (C): (A) a substrate is prepared, which has, in different regions of the surface thereof, a first film and a second film formed from a different material than the first film; (B) ...
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WO/2024/091105A1 |
Provided are: cerium oxide particles for chemical mechanical polishing; and a slurry composition for chemical mechanical polishing comprising same. Provided are: a slurry composition for chemical mechanical polishing that can significant...
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WO/2024/087063A1 |
A display substrate and a manufacturing method therefor, and a display device. The display substrate comprises a base structure layer; the base structure layer comprises a base material layer, a sacrificial layer, and an optical film lay...
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WO/2024/087620A1 |
Provided in the present disclosure are a preparation method for a solar cell, and a solar cell. The preparation method for the solar cell comprises the following steps: preparing a barrier layer (114) on a transparent conductive film (11...
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WO/2024/090403A1 |
Conventionally, it was not possible to obtain a conductive pillar module that is for manufacturing a semiconductor, that can be used for laying a secondary wiring on a substrate of a flip chip package and forming a redistribution layer (...
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WO/2024/088494A1 |
The disclosure relates to a semiconductor package (100) comprising an electronic chip (140);an encapsulant (150) encapsulating at least part of the at least one electronic chip (140); a first metal layer (110) placed upon at least one of...
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WO/2024/090212A1 |
This method for manufacturing a member having a gas flowpath includes: preparing a metal material inside of which a gas flowpath has been formed; and forming an anti-corrosion film on the inner surface of the gas flowpath using atomic la...
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WO/2024/091396A1 |
An apparatus includes a vacuum chamber, a first component, a second component that is movable relative to the first component, and a gas injector. The vacuum chamber includes a first vacuum zone and a second vacuum zone. The first compon...
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WO/2024/091322A1 |
Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and i...
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WO/2024/087787A1 |
The present disclosure relates to a semiconductor structure, a formation method therefor, and a memory. The formation method of the present disclosure comprises: providing a base, the base comprising a substrate, and one side of the subs...
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WO/2024/090208A1 |
Provided is a substrate processing method comprising: (a) preparing a substrate on a mounting table, the substrate having a silicon nitride-containing film in which a recess defined by a top, a side wall, and a bottom is formed, and a si...
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WO/2024/088437A1 |
The present invention relates to the technical field of conveying and feeding, and particularly to a pin-belt-type insertion pin feeding mechanism and an operating method thereof. The present invention provides a pin-belt-type insertion ...
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WO/2024/091101A1 |
Provided are: chemical mechanical polishing cerium oxide particles; and a chemical mechanical polishing slurry composition containing same. Provided are the chemical mechanical polishing slurry composition and a method for manufacturing ...
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WO/2024/091645A1 |
Systems, methods, and curriculum for simulating semiconductor production and associated methods of using the same on a wafer suitable to produce a semiconductor. One or more barriers of a central laboratory hub of the system separate sta...
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WO/2024/090252A1 |
This substrate treatment method includes: (a) a step of preparing a substrate, the substrate containing a first region including a first material and a second region including a second material which is different from the first material;...
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WO/2024/091643A1 |
An electronic device placement system includes a placement head including a spindle, a positioning system configured to move the spindle between a picking location and a placement location, a spindle assembly Z-drive, a piezo stage movab...
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WO/2024/090060A1 |
In step S5, before using a new brush for cleaning, an image of the cleaning surface of the brush is captured as a reference cleaning surface image. The cleaning is performed by applying the cleaning surface of the brush to a substrate. A...
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WO/2024/087392A1 |
Disclosed in the present disclosure is a dicing method for a multi-layer stacked wafer. The method comprises the following steps: forming a first stack structure located on a first base, and a second stack structure stacked on the first ...
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WO/2024/091321A1 |
Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and i...
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WO/2024/089850A1 |
This polishing liquid contains abrasive grains containing cerium oxide, at least one type of aromatic carboxylic acid compound selected from the group consisting of aromatic carboxylic acids and salts thereof, and halide ions. This polis...
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WO/2024/088767A1 |
The invention relates to a susceptor for a device for depositing a layer of semiconductor material onto a substrate wafer by means of deposition from the gas phase, the susceptor comprising a susceptor plate and a carrier ring for a subs...
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WO/2024/090278A1 |
The present invention provides a highly reliable semiconductor device by suppressing damage to a semiconductor element and changes in the properties thereof and suppressing the occurrence of insulation defects between conductor patterns ...
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WO/2024/087703A1 |
Provided in the present application are a transistor, an integrated circuit and a preparation method, and an electronic device. The transistor comprises a channel and a gate arranged on the channel. The gate comprises a coverage layer ar...
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WO/2024/089187A1 |
The invention relates to a piezoelectric-on-insulator (POI) substrate (130) comprising a carrier substrate (100) comprising a trapping layer (102) on a free surface (104) of the carrier substrate (100), a piezoelectric layer (106), an in...
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WO/2024/091793A1 |
Embodiments of the present technology include semiconductor processing methods. The methods may include providing a silicon-containing precursor and a dopant precursor to a processing region of a semiconductor processing chamber. A subst...
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WO/2024/091781A1 |
Exemplary semiconductor processing methods may include providing a resist precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. One or more light emitting diode ...
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WO/2024/091404A1 |
The present disclosure relates to methods, systems, and apparatus for monitoring temperature at multiple sites within a substrate processing chamber. A system for processing substrates includes: a process chamber comprising a processing ...
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WO/2024/089922A1 |
Provided is a selection method for abrasive grains, wherein the abrasive grains contain cerium and are selected on the basis of a short-life component value of the positron lifetime measured by means of a positron annihilation method. Pr...
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WO/2024/092057A1 |
A method includes obtaining, by a processing device, data indicative of locations of defects of a substrate. The method further includes generating an image indicating the locations of the defects. The method further includes providing t...
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WO/2024/091397A1 |
Methods and systems for inspecting a specimen are provided. One system includes an inspection subsystem configured for directing light to an area on the specimen and for generating output responsive to light from the area on the specimen...
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WO/2024/090846A1 |
The present invention relates to a vacuum-based thin film modifier, a thin film modifying composition comprising same, a thin film forming method using same, and a semiconductor substrate and semiconductor device manufactured therefrom, ...
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WO/2024/087894A1 |
An adhesive tape tearing module for a double-glass assembly, and an adhesive tape tearing machine. The adhesive tape tearing module comprises an adhesive tape tearing assembly; the adhesive tape tearing assembly comprises a second transf...
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WO/2024/087181A1 |
The present application relates to the technical filed of display, and discloses a display apparatus. The display apparatus comprises a first housing, a second housing, a flexible display panel, a reel, a connecting plate, a tensioning a...
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WO/2024/089359A1 |
The invention relates to a method for forming a respective layer of silicon carbide (20) on a plurality of silicon substrates, the method consecutively comprising: - placing a plurality of vertically stacked silicon base substrates (10) ...
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WO/2024/091389A1 |
An apparatus comprises an electrostatic chuck including a plate electrode and a column structure coupled with the plate electrode. A disk is coupled with the electrostatic chuck where the disk includes a first hole in a center of the dis...
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WO/2024/091933A2 |
A method of forming a heterostructure includes providing a substrate, forming a template layer of the heterostructure such that the template layer is supported by the substrate, and implementing a non-sputtered, epitaxial growth procedur...
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WO/2024/090139A1 |
[Problem] To provide a processing system which can efficiently process a plurality of objects to be processed by using a robot. [Solution] The present invention is configured to have: a cage 100 for processing which has a cage body 10 fo...
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WO/2024/087634A1 |
The present application relates to a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: an isolation tray (118) having a first conductivity type; an injection assistance structure comprisi...
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WO/2024/087538A1 |
Disclosed are a semiconductor structure and a manufacturing method therefor, and a memory. The manufacturing method comprises: providing a substrate (100), and forming, on the top surface of the substrate (100), a plurality of isolation ...
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WO/2024/091416A1 |
Embodiments of the present disclosure generally relate to apparatus and systems for in-situ film growth rate monitoring and include a system to monitor film growth on a substrate including a light source, a collimator, a dichroic mirror,...
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