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WO/2024/096992A1 |
Embodiments disclosed herein include a method for field adjusting calibrating factors of a plurality of RE impedance matches for control of a plurality of plasma chambers. In an embodiment, the method comprises collecting and storing in ...
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WO/2024/096898A1 |
Embodiments provided herein generally include apparatus and methods, controlled by flexible tuning algorithms, for generating a plasma in a plasma processing chamber. Flexible communications between equipment of the plasma processing sys...
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WO/2024/094304A1 |
The present invention relates to a method for heating of a substrate (20), in particular a substrate (20) of a thermal laser evaporation (TLE) system (10). Further, the present invention relates to a substrate heater (30) for heating a s...
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WO/2024/097506A1 |
A component for use in a semiconductor processing chamber is provided. A component body has a process facing surface, wherein the component body comprises at least one of iron, iron alloy, nickel, nickel alloy, titanium, and titanium all...
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WO/2024/097679A1 |
Systems and methods for increasing a heat transfer contact area associated with an edge ring are described. The edge ring includes a horizontal section having an inner diameter and an outer diameter. The inner diameter surrounds a substr...
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WO/2024/096998A1 |
Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, and a lid configured to seal the chamber. In an embodiment, a modular microwave plasma applica...
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WO/2024/092550A1 |
The present invention relates to a quality improvement method and apparatus for a semiconductor device, and a high-energy particle beam photolithography device. The method comprises: acquiring connected regions consisting of target pixel...
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WO/2024/097079A1 |
An electrode apparatus for an ion implantation system has a base plate having a base plate aperture and at least one securement region. A securement apparatus is associated with each securement region, and a plurality of electrode rods a...
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WO/2024/096513A1 |
The substrate processing device according to one embodiment of the present invention comprises: a chamber having sidewalls; a susceptor having a substrate mounted inside the chamber; an upper dome that covers the upper surface of the cha...
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WO/2024/097593A1 |
A method of method of treating a semiconductor substrate. The method may include, in a beamline ion implanter, exposing a substrate surface of the semiconductor substrate to a plasma clean and exposing the substrate surface to a hydrogen...
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WO/2024/097538A1 |
Exemplary semiconductor processing chamber faceplates may include a body having a first surface and a second surface opposite the first surface. The body may define a plurality of apertures that extend through one or both of the first su...
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WO/2024/097077A1 |
A seal for a substrate support in a substrate processing system includes first and second annular seal portions each having upper and lower edges. The second seal portion is located radially outside of the first seal portion. A height of...
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WO/2024/094644A1 |
A charged particle beam detector may include a plurality of detector segments designed to accommodate a field of view (FOV) of a charged particle beam apparatus. A first detector segment may form a first detector region configured to cap...
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WO/2024/096008A1 |
The present invention addresses the problem of providing a local observation method in which, when a first area-to-be-irradiated is irradiated with an electronic beam, a second area, which is influenced by same, can be locally observed, ...
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WO/2024/093697A1 |
A capacitively coupled plasma processor, comprising a reaction cavity (10). A base (20) and an upper electrode (24), which is arranged opposite the base (20) are comprised in the reaction cavity (10), wherein the base (20) is used for su...
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WO/2024/097143A1 |
A system and method of a tilt-column electron beam imaging system is disclosed. The system may include an imaging sub-system. The imaging sub-system may include a plurality of electron beam sources configured to generate a plurality of b...
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WO/2024/097505A1 |
A component for use in a semiconductor processing chamber is provided. A component body of a metal or metal alloy has a process facing surface. An intermediate aluminum oxide coating is on the process facing surface, wherein the intermed...
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WO/2024/088791A1 |
A microwave plasma reactor (1) according to the present invention comprises a plasma chamber (2), a workpiece holder (6), a gas flow system, one or more microwave generators, a plurality of microwave emitters (10) each comprising an ampl...
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WO/2024/091261A1 |
Examples of a substrate support assembly are provided herein. In some examples, the substrate support assembly has a ceramic electrostatic chuck having a first side configured to support a substrate and a second side opposite the first s...
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WO/2024/091857A1 |
Systems and methods for fast control of impedance associated with an output of a plasma source are described. One of the systems includes the plasma source that generates a radio frequency (RF) signal. The system further includes a load ...
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WO/2024/087153A1 |
A quality improvement method and apparatus for a semiconductor device, and a high-energy particle beam lithography device. The method comprises: by means of a preset pixel point recognition policy, recognizing, from i-th to j-th layers o...
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WO/2024/087395A1 |
A scanning method of a scanning electron microscope (100), and a scanning electron microscope (100). The scanning electron microscope (100) comprises a first detector (4) and a second detector (5) arranged opposite to each other. The sca...
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WO/2024/091844A1 |
Methods of filling a gap with a dielectric material including using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. A passivation plasma may remove inhibitor species ads...
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WO/2024/091318A1 |
A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the...
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WO/2024/091829A1 |
A method of milling a diagonal cut in a region of a sample, the method comprising: positioning the sample in a processing chamber having a charged particle beam column; moving the region of the sample under a field of view of the charged...
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WO/2024/091528A1 |
Embodiments of process kits for use in a substrate process chamber are provided herein. A process kit for a substrate process chamber including: a cover ring configured to extend over unprotected dicing tape of a tape frame substrate dur...
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WO/2024/091319A1 |
A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and af...
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WO/2024/088719A1 |
The invention provides an apparatus for generating a plasma from a process gas, the apparatus comprising: a) a power supply b) a hollow cathode arc tube comprising: i) an inert gas inlet ii) a cathode tube connected to the power supply a...
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WO/2024/088718A1 |
An electron-optical projection device for projecting a plurality of charged particle beams towards a sample, the device comprising: a stack of plates comprising beam directing elements configured to project the plurality of charged parti...
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WO/2024/091408A1 |
A cupped baffle plate for a showerhead of a substrate processing system includes: a baseplate to be disposed in a plenum of the showerhead to receive a fluid from a stem of the showerhead, the baseplate includes holes to receive standoff...
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WO/2024/091337A1 |
An apparatus for limiting the deposition and thermal distortion of an electrode is disclosed. The apparatus includes a fluid source in communication with a cooling channel that is embedded in the electrode. By circulating fluid through t...
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WO/2024/091404A1 |
The present disclosure relates to methods, systems, and apparatus for monitoring temperature at multiple sites within a substrate processing chamber. A system for processing substrates includes: a process chamber comprising a processing ...
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WO/2024/090934A1 |
The present invention provides a substrate processing method. In the substrate processing method according to an embodiment, a substrate is processed by supplying process gas into a chamber, wherein a part of the process gas is excited i...
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WO/2024/091305A1 |
The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing vol...
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WO/2024/091280A1 |
Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber that configured to adjust the timing and characteris...
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WO/2024/085938A1 |
Systems and methods provide a solution for efficiently generating high density plasma for a physical vapor deposition (PVD). The present solution includes a vacuum chamber for a PVD process. The system can include a target located within...
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WO/2024/083068A1 |
Provided in the embodiments of the present disclosure are an objective lens system for a scanning electron microscope, and a scanning focusing method. The objective lens system comprises a magnetic lens, a first deflection apparatus, a d...
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WO/2024/083437A1 |
Described herein is a method for die-to-die (D2D) image alignment using a defect map associated with an image. The method includes accessing a set of images of a substrate, which correspond to different image capture conditions. The loca...
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WO/2024/086606A1 |
Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support in...
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WO/2024/085410A1 |
The present invention relates to a plasma chamber and a wafer etching method using the plasma chamber. The plasma chamber of the present invention comprises: a housing having a reaction space therein in order to etch a wafer through plas...
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WO/2024/083470A1 |
A particle transfer system, including: a particle trap apparatus configured to trap a plurality of particles; and a particle conveyance structure configured to convey the particles in parallel from the particle trap apparatus to a substr...
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WO/2024/085975A1 |
A modular gas pallet assembly is disclosed herein, along with a cleaning unit and chemical mechanical polisher having the same. In one example, the gas pallet assembly includes three outlets and two or less inlets. The gas pallet assembl...
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WO/2024/086323A1 |
Disclosed are systems and methods relating to a vehicle for roadway construction which includes radiation shielding rollers, additional radiation shielding, and a particle source configured to generate a particle beam, a beam scan horn, ...
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WO/2024/085481A1 |
The present embodiment is an impedance adjustment circuit for adjusting impedance by adjusting equivalent capacitance, the impedance adjustment circuit including: a unit leg that changes equivalent capacitance according to connection to ...
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WO/2024/084762A1 |
In order to make it possible to improve the uniformity of plasma within a processing chamber of a plasma processing device, this plasma processing device comprises: a sample chamber 0112 that comprises, in the interior thereof, a sample ...
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WO/2024/084031A1 |
The present invention relates to a method and equipment for transferring an object from a donor substrate (30) towards a target substrate (40), the donor substrate (30) containing the objects that are to be transferred and have dimension...
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WO/2024/080530A1 |
The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to a plasma-resistant glass, an...
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WO/2024/077416A1 |
The present invention relates to a machining control method for a semiconductor device, and a high-energy particle beam lithography device. The machining control method for a semiconductor device comprises: acquiring an integrated circui...
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WO/2024/081473A1 |
Examples are disclosed relate to using an inhibitor with a silicon oxide ALD deposition process to refill recesses in STI regions. One example provides a method of processing a substrate. The method comprises depositing an inhibitor on t...
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WO/2024/081015A1 |
Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and imp...
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