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WO/2024/009611A1 |
[Problem] To provide a multi-charged particle beam irradiation device in which a blanking aperture array mounting board can be appropriately replaced while suppressing the reduction in an operating rate, a multi-charged particle beam irr...
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WO/2024/009229A1 |
The invention relates to the technique of vacuum deposition of metal and ceramic coatings, in particular to a device for high-rate magnetron sputtering, and can be used in the manufacture of products with coatings of metals, glass, polym...
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WO/2024/007758A1 |
An electron source, a control method, a chip testing apparatus and a chip manufacturing apparatus. The electron source may comprise: a semiconductor layer; a first insulating medium layer provided on the semiconductor layer; an emitting ...
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WO/2024/010100A1 |
The present invention relates to a semiconductor manufacturing part including a boron carbide plasma-resistance member. An aspect of the present invention provides a semiconductor manufacturing part which includes boron carbide formed by...
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WO/2024/009913A1 |
A multi-electron beam image acquisition apparatus according to an embodiment of the present invention is characterized by comprising: a stage on which a substrate is placed; two-stage multiple first electrostatic deflectors that have mul...
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WO/2024/002219A1 |
Disclosed in the present application are a wafer bearing device and a semiconductor process apparatus. The wafer bearing device comprises a base, an edge protection ring assembly, a first measurement assembly and a driving assembly, wher...
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WO/2024/003987A1 |
This aberration correction device for correcting aberration of an optical system has a first multipole lens that generates a first hexapole field, a second multipole lens that generates a second hexapole field, a first deflector that gen...
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WO/2024/001822A1 |
The present invention relates to the technical field of semiconductors. Disclosed are a process chamber and a semiconductor process apparatus. The process chamber comprises a chamber body, wherein the chamber body is internally provided ...
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WO/2024/004718A1 |
This pattern matching method determines the pattern density of each of a plurality of inspection areas (A1 to A10) from design data, divides the pattern densities into a plurality of density groups (PG1 to PG3) in accordance with the num...
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WO/2024/006273A1 |
A method of manufacturing a dielectric barrier discharge (DBD) structure includes forming a patterned electrode layer around an outer perimeter of a substrate composed of a dielectric material. The patterned electrode layer includes mult...
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WO/2024/004444A1 |
A disclosed plasma processing device comprises a plasma processing chamber, a substrate support part, a ground frame, a power storage unit, a rectification and smoothing unit, a power supply output connector, and a power reception coil. ...
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WO/2024/006245A1 |
An imaging system for imaging a biological sample or another sample containing fluorescent molecules may include an optical system with a light source emitting light, wherein the light is directed by the optical system to the sample via ...
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WO/2024/002399A1 |
The present invention relates to a multi-mode low-voltage electron microscope operative in the accelerating voltage range of 3-50 kV and comprising in the following order based on the direction of a primary electron beam (12): an electro...
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WO/2024/002798A1 |
A method for controlling deflectors of a charged-particle inspection system is disclosed. The method comprises establishing a mapping relationship for each digital-to- analog converter (DAC) of a plurality of DACs included in a charged-p...
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WO/2024/005850A1 |
An edge ring system includes a moveable top ring and a cover ring configured to be arranged above and radially outward of the moveable top ring. The cover ring includes an annular body and a stepped portion extending radially inward from...
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WO/2024/006627A1 |
Embodiments relate to a plasma generator including a dielectric layer elongated in a longitudinal direction that extends,01 mm - 2mm in a thickness direction perpendicular to the longitudinal direction. The dielectric layer defines first...
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WO/2024/006229A1 |
A substrate includes a first outer surface, a second outer surface opposite the first outer surface, and a region having a volume extending from the first outer surface to the second outer surface. At least a portion of the volume of thi...
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WO/2024/006675A1 |
Systems and methods for calibrating radio frequency (RF) generators are described. One of the methods includes receiving a plurality of analog measurement signals from a plurality of RF sensors to output a plurality of digital signals. T...
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WO/2023/216958A9 |
Disclosed in the present application are a process chamber and a parallelism testing method. The process chamber comprises a chamber body and a chamber cover plate covering on the chamber body. A bearing device is provided with a bearing...
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WO/2024/006211A1 |
A silicon-based film is conformally deposited in a feature and controllably etched using remote plasma. The silicon-based film may be an amorphous silicon layer or a doped silicon layer comprising silicon oxide, silicon nitride, silicon ...
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WO/2024/006938A1 |
Provided are processes for development of photopatterned metal or metal oxide-based thin film photoresists post-EUV exposure for removal of non-volatile species and deterring etch stop. Repeated cycles of alternating treatment with an et...
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WO/2023/248129A1 |
Scanning transmission electron microscope, STEM, having a sample plane, the STEM comprising a primary electron beam source arranged to provide a primary electron beam to a sample located at the sample plane of the STEM. A STEM detector, ...
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WO/2023/248856A1 |
Provided is a GCIB device capable of changing the energy of ions to be emitted, without changing: the extraction electrode arrangement optimized at a specific voltage; the electrode arrangement of the GCIB device having a permanent-magne...
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WO/2023/246561A1 |
The present application relates to the semiconductor process technology. Disclosed in the present application are a semiconductor process apparatus and a bearing device therefor. The bearing device for the semiconductor process apparatus...
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WO/2023/249118A1 |
Provided are an emitter capable of emitting electrons in a highly efficient and stable manner for a long period, an electron gun and an electronic apparatus in which the emitter is used, and an emitter manufacturing method. An emitter ...
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WO/2023/247922A1 |
There is provided an electron beam emitting assembly comprising a cylindrical cathode element (32) and a current source (36), wherein an electrically conductive element (40, 94) connected to the current source (36) is positioned to conta...
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WO/2023/248234A1 |
A sterilization device (102) has been disclosed. The sterilization device (102) comprises a toroidal housing (104) having an outer wall (106), an inner wall (108), and a central cavity (302) to receive an object (306) to be sterilized. T...
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WO/2023/248287A1 |
According to the present disclosure, in order to enable evaluation of a semiconductor on the basis of characteristics that are equivalent to transistor (Tr) characteristics and are acquired in an earlier stage during a semiconductor manu...
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WO/2023/248272A1 |
The problem of an axisymmetric electron gun structure is that some of gas molecules flowing in from a relatively low-vacuum chamber reach a photoelectric film, thereby causing deterioration of an NEA surface, instability of an emission c...
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WO/2023/249164A1 |
The present invention relates to a plasma chamber having a swirl motion side gas feed, the plasma chamber comprising: a housing having a seating part on which a wafer is seated; a first swirl motion side gas feed that is provided on the ...
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WO/2023/247067A1 |
A multi-beam charged particle beam system and a method of operating a multi-beam charged particle beam system with higher precision is provided. The improvement relates to a multi-beam forming unit with a lower sensitivity to secondary e...
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WO/2023/249322A1 |
The present invention relates to a method for analyzing a silicon nitride substrate. More specifically, the method comprises: a step for manufacturing a silicon nitride substrate; a step for manufacturing an analysis sample by cutting th...
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WO/2023/248271A1 |
The present invention: improves the ratio of an emission angle current density to the total current of a field emission electron source in which a (100) plane of hexaboride single crystal or transition metal carbide single crystal is use...
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WO/2023/248320A1 |
In order that, according to a defocused state at the start of an AF operation, a just focus search range is adjusted and focus adjustment is completed quickly, precisely, stably, and automatically, the present invention provides a charge...
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WO/2023/230322A9 |
The present disclosure provides methods for treating, preventing, ameliorating, inhibiting or delaying the onset of injection site reactions associated with the subcutaneous administration of elamipretide, or a pharmaceutically acceptabl...
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WO/2023/244676A1 |
A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber and a support structure disposed within the processing chamber. The support structure forms a set of ducts. The plasma pr...
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WO/2023/244730A1 |
An autonomous pathogen detection and disinfection mobile platform having a small footprint, such that embodiments of the platform are deployable within interior spaces such as hospital, clinics, and other healthcare facilities. The platf...
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WO/2023/244653A1 |
Various embodiments herein relate to systems, apparatuses, and methods for modulation of station voltages during plasma operations. In some embodiments, a system comprises: a process chamber; at least one variable reactance element opera...
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WO/2023/243840A1 |
An impedance adjustment circuit for adjusting an impedance by adjusting an equivalent capacitance according to an embodiment of the present invention comprises: a capacitor; a unit leg configured to change the equivalent capacitance acco...
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WO/2023/243888A1 |
Embodiments provide an etching-resistant ceramic part and a method for manufacturing same, the etching-resistant ceramic part comprising a basic mixture consisting of yttria and a first metal compound, wherein the basic mixture comprises...
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WO/2023/245064A1 |
A plasma generation system is disclosed that includes a plasma generator and a magnetic field generator. The plasma generator includes a plasma chamber having a longitudinal Z-pinch axis. The plasma generator is configured to generate a ...
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WO/2023/245065A1 |
A plasma generation system includes a plasma confinement device, a precursor supply unit, and a power supply unit. The plasma confinement device includes an inner electrode, an outer electrode, and an electrically insulating insert. The ...
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WO/2023/244834A1 |
A container includes a deflector, disposed in an interior of a substrate container, having a longitudinal opening and a deflection surface and a gas distributor configured to provide a purging gas to purge an interior of a substrate cont...
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WO/2023/241992A1 |
The aim of the invention is to coat a mirror substrate (2) with a multilayer coating which is highly reflective to useful wavelengths and which comprises a plurality of individual layers to be sequentially applied. This is achieved in th...
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WO/2023/244379A1 |
Embodiments disclosed herein include semiconductor processing tools. In an embodiment, the semiconductor processing tool comprises a plasma source, and a chamber coupled to the plasma source. In an embodiment, a pump is coupled to the ch...
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WO/2023/242909A1 |
The present invention comprises: a mask sample table unit 113 comprising a holder 111 to which a sample 112 is adhered; a sample unit base 106 on which the mask sample table unit is mounted; and an ion source 103 that irradiates the samp...
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WO/2023/244412A1 |
Embodiments disclosed herein include a dynamic load simulator. Tn an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RE controller. In an embodiment, the smart RF controller compri...
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WO/2023/241870A1 |
Systems and methods of detecting a defect in a sample using a charged-particle beam apparatus are disclosed. The apparatus may include a charged-particle source configured to emit charged particles and a controller including circuitry co...
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WO/2023/242954A1 |
This charged particle beam device comprises: a sample stage that moves a sample; an imaging unit that acquires observation image data of the sample; an output unit that digitizes an operating state of the charged particle beam device, an...
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WO/2023/244857A1 |
A thruster includes a mass source, an ejection outlet, and a channel forming an ejection path from the mass source to the ejection outlet. Multiple annular current paths form loops such that current flow along the loops is transverse to ...
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