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WO/2023/166551A1 |
This ion milling device is provided with a first monitoring mechanism for measuring a quantity of sputtered particles generated by irradiating a specimen with an ion beam, and a second monitoring mechanism for capturing an image of a mac...
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WO/2023/167774A1 |
The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam deposition or etch process to correct asymmetry of depositing or etching between the inboard side and the outboard side of device str...
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WO/2023/150478A9 |
Described is a wafer chuck assembly comprising a platen with one or more plasma electrodes, and a radio frequency (RF) assembly comprising at least one RF conductor electrically coupled to the one or more plasma electrodes. The at least ...
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WO/2023/167414A1 |
A transmission electron microscope system according to an embodiment may comprise: an objective lens unit which is provided with a sample and analyzes the sample; a detection unit which is disposed below the objective lens unit and detec...
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WO/2023/167524A1 |
The present invention is installed between a hydrogen fuel cell and a hydrogen supply device to serve as a turbocharger/accelerator, whereby the hydrogen supplied to the hydrogen fuel cell is activated by high-density string electric fie...
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WO/2023/167522A1 |
The present invention is installed between a hydrogen fuel cell and a hydrogen supply device, wherein hydrogen supplied to the hydrogen fuel cell is activated by the strength of an ultra-high density line electric field and supplied in a...
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WO/2023/167526A1 |
The present invention is installed between a hydrogen fuel cell and a hydrogen supply device, wherein hydrogen supplied to the hydrogen fuel cell is activated by the strength of an ultra-high density line electric field and supplied in a...
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WO/2023/167854A1 |
A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A controller of the RF matching network receives the DC magnitu...
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WO/2023/167460A1 |
The present invention relates to a sliding-type anti-loosening fastening structure between a first member and a second member, wherein an unlocking cap slides to prevent a fixing bolt coupling the first member and the second member from ...
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WO/2023/166966A1 |
A substrate processing device 10 comprising: a vacuum processing chamber 16; a substrate holder 50 that holds a substrate S within the vacuum processing chamber 16; sealing that forms a closed space 82 between the substrate holder 50 and...
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WO/2023/161509A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/160959A1 |
A system and a method for controlling a beam spot of an Advanced Charge Controller module in an electron beam system. The Advanced Charge Controller module includes a MEMS minor configured to steer and shape the beam in order to perform ...
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WO/2023/161511A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/161501A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/161521A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/164006A1 |
Methods and systems for electron beam assisted fused deposition modeling can include a particle accelerator configured to generate a particle beam, a shield cone and a magnet configured to direct the particle beam in the shield cone form...
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WO/2023/162391A1 |
The present invention provides a laser-accelerated particle beam device and a laser-accelerated particle beam generation method which achieve a reduction in fluctuation of a light focusing position when an irradiation angle is changed. T...
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WO/2023/160874A1 |
The invention relates to a multi-beam particle microscope for reducing particle beam-induced traces on a sample at which a high voltage is present. The occurrence of additional residual gas in the sample chamber is reduced by the use of ...
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WO/2023/160741A1 |
The invention relates to a method and a device for coating powder- or granular-form particles by means of gas flow sputtering with a hollow cathode functioning as the target and arranged in an evacuable container together with an anode a...
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WO/2023/161510A1 |
High-power- (HP-) generator (10) configured to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/161503A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/161518A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/163854A1 |
An inductor strap for a radio frequency matching circuit of a substrate processing system comprises a first end and a second end each comprising a respective connector tab configured to connect to a terminal of a respective capacitor, an...
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WO/2023/161517A1 |
High-power- (HP-) generator (10) and a method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators ...
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WO/2023/160809A1 |
44019242 29475P-WO 23 ABSTRACT A deposition apparatus (110) for processing a substrate supported on a substrate support is provided. The deposition apparatus includes a vacuum chamber (112) having a lid assembly (114), one or more pump p...
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WO/2023/161502A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/161522A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/160836A1 |
According to one embodiment, a substrate support assembly for supporting a substrate is provided. The substrate support assembly, includes a table body having a surface configured to face the substrate; a table frame coupled to the table...
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WO/2023/158007A1 |
The present invention relates to a vessel holder, used for microscopes and the like, fixed by means of a conical screw. More specifically, the vessel holder can be closely attached to a stage by means of a single screw while being accura...
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WO/2023/158227A1 |
A plasma generation device according to one embodiment may comprise: a chamber in which plasma is generated; at least one sensor arranged inside the chamber; a voltage application unit for applying, to the sensors, three or more sinusoid...
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WO/2023/156117A1 |
A vacuum layer deposition apparatus comprising a vacuum coating chamber with an inner space; a material source constructed to generate electrically positively charged particles of a material to be deposited on a substrate in said inner s...
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WO/2023/155969A1 |
The invention relates to a circuit arrangement (10) for providing direct current for a plasma source, in particular for generating non-thermal arcs and glow discharges, and a plasma source as well as a method for operating the circuit ar...
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WO/2023/158006A1 |
The present invention relates to a stage assembly having a vent structure for preventing condensation and, more particularly, to a stage assembly having a vent structure for preventing condensation in which a flow channel is formed in a ...
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WO/2023/158675A1 |
A layered assembly for use in a controlled atmosphere chamber includes a plurality of substrates and an electrically functioning layer embedded between two adjacent substrates of the plurality of substrates, the electrically functioning ...
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WO/2023/158005A1 |
The present invention relates to a Scotch yoke-type stage assembly. More specifically, the Scotch yoke-type stage assembly simplifies the structure and reduces parts so that all operational parts can be mounted within a space that is sma...
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WO/2023/158491A1 |
A method for reducing variability between features of a substrate is described. The method includes generating, by a single radio frequency (RF) generator, an RF signal. The method further includes modifying, by the single RF generator, ...
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WO/2023/155078A1 |
A method of in-line inspection of a substrate is described. The method includes scanning a primary electron beam (105) over a first surface portion of a substrate, the substrate being a large area substrate with a grain structure, partic...
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WO/2023/158490A1 |
Systems and methods for central frequency tuning are described. One of the methods includes receiving a voltage signal from an output of a match coupled to a low frequency (LF) radio frequency (RF) generator and a high frequency (HF) RF ...
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WO/2023/158582A1 |
Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the pro...
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WO/2023/158478A1 |
Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (<1 %) on a substrate in a processing chamber. The method begins by obtaining a referenc...
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WO/2023/154114A1 |
An edge ring for use in a plasma chamber includes a first pair of edge ring segments with each one of the first pair of edge ring segments having a first thickness and a second pair of edge ring segments with each one of the second pair ...
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WO/2023/154663A1 |
Various embodiments herein relate to apparatuses and methods for evaluating plasma uniformity using computer vision. In some embodiments, a method comprises obtaining signals from one or more camera sensors optically coupled to one or mo...
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WO/2023/154115A1 |
A confinement ring for use in a process chamber includes a tubular extension that is configured to surrounds a process region in the process chamber. An upper end of the tubular extension is configured to connect to a showerhead of the p...
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WO/2023/152305A1 |
The invention relates to a method for producing perforated metal strips having a metallic coating, wherein metal strips and in particular steel sheet strips with a perforation or a hole pattern are fed to a coating device and are passed ...
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WO/2023/153822A1 |
A substrate treatment apparatus according to an embodiment of the present invention comprises: a chamber which has a side wall; a susceptor on which a substrate is mounted in the chamber; an upper dome which covers the top surface of the...
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WO/2023/154613A1 |
Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is a...
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WO/2023/154233A1 |
A balun transformer for use in powering an electrode coil of a semiconductor chamber is provided. In one example, the balun transformer includes a primary coil having a primary winding between a primary first end and a primary second end...
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WO/2023/152978A1 |
The present invention suppresses a reduction in resolution that is likely to occur when a scanning region is expanded in a charged particle beam device equipped with an aberration corrector. A charged particle source (ES) generates charg...
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WO/2023/150542A1 |
The present disclosure provides to electron microscopy grids and methods, kits, and systems for using and fabricating thereof. More particularly, the present disclosure provides electron microscopy grids comprising a single first layer c...
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WO/2023/150026A1 |
The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle rel...
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