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WO/2024/059276A1 |
A spring-loaded seal band for protecting a bonding layer of a substrate support, the spring-loaded seal band includes an annular body having a first length when the spring-loaded seal band is in an uncompressed state. The annular body co...
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WO/2024/051405A1 |
A spray assembly, a semiconductor device, and a wafer processing method. An annular spray plate is provided, multiple independent spray regions are formed in an annular region of the spray plate, and the flow rate, concentration and the ...
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WO/2024/054903A1 |
A charged particle guide includes a plurality of electrically conductive segments radially spaced apart from one another about an opening defined axially through the segments, wherein the opening defines a central axis passing centrally ...
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WO/2024/054943A1 |
A device may include a plasma chamber in fluid communication with an ancillary reaction chamber and an integrated reformer. The integrated reformer may be in fluid communication with the ancillary reaction chamber. The ancillary reaction...
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WO/2024/054254A1 |
A power supply system includes a RF power source configured to generate an output signal at an output frequency, a signal source configured to generate a perturbation signal, an extremum seeking frequency controller configured to generat...
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WO/2024/053179A1 |
An output window unit which comprises a window foil that allows an electron beam to pass therethrough toward the outside of a housing and a support member fixed to the housing and supporting the window foil, wherein the support member co...
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WO/2024/054026A1 |
Disclosed is a plasma generation device using a resonant waveguide. The plasma generation device is characterized by comprising: an annular or elliptical central waveguide including a plurality of slots on the inner surface thereof; a fi...
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WO/2024/053073A1 |
An ion milling device has: a sample stage (2) on which is installed a section milling holder that holds a sample (2) and a shielding plate (3); an ion gun (4) that emits a non-convergent ion beam toward the sample; and a shielding plate ...
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WO/2024/054270A1 |
A RF generator includes a RF power source configured to generate an output signal at an output frequency, and an extremum-seeking frequency controller configured to generate a frequency control signal. The frequency control signal varies...
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WO/2024/054405A1 |
An array of localized auto-focus sensors provides direct measurement of the working distance between each microscope column in the array and the substrate being imaged below. The auto-focus sensors measure the working distance between ea...
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WO/2024/054025A1 |
A plasma generator by means of a resonant waveguide is disclosed. The plasma generator comprises: an annular or elliptical central waveguide that includes a plurality of slots on the inner side surface thereof; a first incident waveguide...
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WO/2024/054438A1 |
Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected ...
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WO/2024/054411A1 |
The present disclosure is directed to an antenna array. The antenna array includes a plurality of dielectric windows coupled to a support structure comprising a plurality of gas ports, a primary frame comprising a primary conduit connect...
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WO/2024/054344A1 |
A gas cooling cover for an exhaust connector of a substrate processing system includes a first cover portion configured for arrangement around a first portion of the exhaust connector of the substrate processing system and including a fi...
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WO/2024/053074A1 |
This ion milling device comprises: a specimen stage (103) on which a specimen is to be placed; a specimen table (102) and a shielding-plate-fixing part (106) which are supported by the specimen stage; a shielding plate (105) fixed to the...
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WO/2024/054380A1 |
Methods and apparatus for multi-sensor determination of a state of semiconductor equipment are provided In some embodiments disclosed herein, semiconductor manufacturing equipment may include: a plurality of sensors comprising one or mor...
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WO/2024/052986A1 |
This observation assistance device for a sample comprises: an observation position display unit that displays, in association with an image display unit, the positions of a plurality of captured images in which a sample is image-captured...
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WO/2024/054334A1 |
Embodiments disclosed herein include an impedance matching network. In an embodiment, the impedance matching network comprises an input, and a first matrix tuning element on a first branch from the input, where the first matrix tuning el...
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WO/2024/054223A1 |
Embodiments include a method of processing a substrate in a plasma processing system, comprising delivering an RF signal, by an RF generator, through an RF match to an electrode assembly while the RF match is set to a first matching poin...
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WO/2024/050878A1 |
Provided are an ion source filament structure, an ion source device and an ion implantation apparatus. The ion source filament structure comprises a filament (10), a feed connection rod (20) and a clamping component (30). The filament (1...
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WO/2024/054774A1 |
An outer upper electrode for plasma processing. A shaped bottom surface and a top surface having a radial width, wherein a middle portion of the top surface has an oval shape. A cylindrical outline traversing a height of the outer upper ...
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WO/2024/047150A1 |
A plasma state monitoring device (1) for a plasma production system (100) having an impedance matching circuit (50) is designed: a) to capture a first group of time-variant measurement values (30) which are associated with the impedance ...
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WO/2024/046685A1 |
Systems, apparatuses, and methods include a detector including a detection element (400) including a portion of a silicon substrate (402) comprising: a front side (410) of the portion of the silicon substrate including a PIN diode that c...
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WO/2024/046987A1 |
The present invention relates to a charged-particle irradiation unit (100) and to a diffractometer comprising such an irradiation unit (100), wherein the irradiation unit (100) comprises a charged-particle source (10), a charged-particle...
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WO/2024/049800A1 |
Target assemblies for PVD chambers are provided herein. In some embodiments, a target assembly for a PVD chamber includes: a backing plate; and a target coupled to the backing plate and having a substrate facing surface opposite the back...
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WO/2024/050248A1 |
An apparatus includes a shower head comprising a disk and a stem coupled with the disk and an adjuster coupled with the stem. The adjuster includes an adapter comprising a heater cartridge; and a fluid line adjacent to the heater cartrid...
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WO/2024/045390A1 |
A plasma flow control device, a plasma etching machine and a uniformity optimization method therefor. The plasma etching machine comprises a plasma reaction cavity, a wafer supporting table and the plasma flow control device, wherein the...
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WO/2024/046668A1 |
The invention relates to a method for calibrating a charged-particle spectrometer (SM), comprising the following steps: A. generating a monochromatic incident charged-particle beam (FP) having a first energy E1; B. generating an incident...
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WO/2024/049595A1 |
A system and method for creating a beam current profile that eliminates variations that are not position dependent is disclosed. The system includes two Faraday sensors; one which is moved across the ion beam and a second that remains at...
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WO/2024/049620A1 |
In some embodiments, a showerhead assembly includes a heated showerhead having a heater plate and a gas distribution plate coupled together; an ion filter spaced from the heated showerhead; a spacer ring in contact between the heated sho...
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WO/2024/050406A1 |
Bias supplies and bias control methods are disclosed. One method comprises applying an asymmetric periodic voltage waveform and providing a corresponding current waveform at an output node relative to a return node; receiving a signal to...
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WO/2024/050252A1 |
Examples are disclosed that relate to using in-situ sputtering in an atomic layer deposition tool to form an angular surface feature in a substrate. One example provides a method of forming an angular surface feature on a substrate in an...
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WO/2024/044925A1 |
A system with an image sensor including: M metal layers (i) and M radiation detectors (i), i=1, …, M. M is an integer greater than 1. The radiation detector (i) includes a radiation absorption layer (i) and IC chips (i, j), j=1, …, N...
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WO/2024/049616A1 |
A plasma source is provided that is configured to form a section of a wall of a vacuum component. The plasma source comprises a body including a dielectric member, a first surface exposed to an exterior region of the vacuum component, an...
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WO/2024/044462A1 |
Embodiments include semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, where...
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WO/2024/044224A1 |
Embodiments of radio frequency (RF) power connection rods are provided herein. In some embodiments, an RF power connection rod includes a first connection rod having a first connection end, a first socket end opposite the first connectio...
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WO/2024/042076A1 |
The invention relates to a coating method for depositing a coating system (S) on a substrate (1), wherein at least one HiPIMS layer (HS) and one DCMS layer (DS) are deposited on the substrate (1) by means of magnetron sputtering. In the ...
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WO/2024/040526A1 |
The present disclosure generally relates to plasma semiconductor processes and related components and tools. In an example, a focus ring includes first and second ring layers. An upper surface of the second ring layer is configured to su...
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WO/2024/044498A1 |
Disclosed herein are systems, methods, and devices processing feed material utilizing a microwave plasma apparatus comprising a powder ingress preventor (PIP). In some embodiments, the microwave plasma apparatus comprises a core plasma t...
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WO/2024/044460A1 |
Embodiments include semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The o...
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WO/2024/044165A1 |
A gas recycling system attachable to a semiconductor processing chamber is provided. A membrane filtering system is in fluid connection with the semiconductor processing chamber, the membrane filtering system comprising at least one gas ...
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WO/2024/037843A2 |
The invention relates, inter alia, to an ion source (10) for generating ions (16) or ion beams (16a), having an ion generation chamber (11) in which the ions (16) are generated. To monitor the ion source (10) and in particular ensure its...
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WO/2024/038824A1 |
The present invention addresses the problem of providing a method for creating detection data for outputting detection data for which an electron beam application device itself has effectively used a gradation range. The method for cre...
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WO/2024/040004A1 |
Systems and methods of monitoring a cleaning process for a deposition chamber are provided. A chamber cleaning source is activated to supply a cleaning agent to a deposition chamber and a foreline cleaning source disposed downstream of t...
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WO/2024/039060A1 |
Disclosed are a viewport for plasma monitoring, a plasma generator comprising same, and a monitoring method. The viewport for plasma monitoring may comprise a transparent substrate and a transparent detection unit formed thereon and be a...
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WO/2024/039061A1 |
Disclosed are an electrode for a capacitively coupled plasma generating device, a capacitively coupled plasma generating device comprising same, and a capacitively coupled plasma uniformity adjusting method. This electrode for a capaciti...
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WO/2024/034937A1 |
Provided is an alloy for plasma etching equipment, the alloy comprising: stainless steel; and dysprosium (Dy) added to the stainless steel.
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WO/2024/035426A1 |
Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a method for waveform generation, wh...
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WO/2024/034155A1 |
Provided are a standard sample for use in a transmission electron microscope, whereby an observation condition that emphasizes contrast in an observation image can be easily set, and a method for manufacturing the standard sample. The pr...
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WO/2024/034052A1 |
The present invention comprises: a sample chamber (109); a sample stage (102) on which a sample (120) is placed via a rotation stage (103) that can be tilted about a tilt axis (T) and rotates about a rotation axis (R) and a 3-axis drive ...
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