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Title:
CAPACITIVELY COUPLED PLASMA PROCESSOR
Document Type and Number:
WIPO Patent Application WO/2024/093697
Kind Code:
A1
Abstract:
A capacitively coupled plasma processor, comprising a reaction cavity (10). A base (20) and an upper electrode (24), which is arranged opposite the base (20) are comprised in the reaction cavity (10), wherein the base (20) is used for supporting a substrate to be processed. A high-frequency radio-frequency power source (HF) and a low-frequency radio-frequency power source (LF) are connected to the base (20). A radio-frequency signal processing apparatus (30) is connected to a unidirectional coupler (14) at a high-frequency radio-frequency power output end and is used for measuring a fundamental frequency reflection power for reflection to the high-frequency radio-frequency power source (HF). The radio-frequency signal processing apparatus (30) comprises a radio-frequency power detector (32), a fast Fourier transform module (34) and a processor (36), wherein the processor (36) receives a first reflection power value outputted by the radio-frequency power detector (32) and a power proportion parameter of each frequency obtained from the fast Fourier transform module (34), and calculates, according to a preset algorithm, a second reflection power value obtained after an intermodulation reflection power is removed.

Inventors:
ZHANG YICHUAN (CN)
YE RUBIN (CN)
Application Number:
PCT/CN2023/125906
Publication Date:
May 10, 2024
Filing Date:
October 23, 2023
Export Citation:
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Assignee:
ADVANCED MICRO FABRICATION EQUIPMENT INC CHINA (CN)
International Classes:
H01J37/24; H01J37/30; H05H1/46
Foreign References:
CN112447471A2021-03-05
CN101346031A2009-01-14
CN113241296A2021-08-10
CN103632927A2014-03-12
CN115003001A2022-09-02
CN101221881A2008-07-16
JPWO2020054005A12021-05-20
US20080128087A12008-06-05
US20090255800A12009-10-15
US20210057188A12021-02-25
Attorney, Agent or Firm:
SUNSHINEIP INTELLECTUAL PROPERTY LAW FIRM (CN)
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