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WO/2024/088791A1 |
A microwave plasma reactor (1) according to the present invention comprises a plasma chamber (2), a workpiece holder (6), a gas flow system, one or more microwave generators, a plurality of microwave emitters (10) each comprising an ampl...
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WO/2024/091261A1 |
Examples of a substrate support assembly are provided herein. In some examples, the substrate support assembly has a ceramic electrostatic chuck having a first side configured to support a substrate and a second side opposite the first s...
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WO/2024/091857A1 |
Systems and methods for fast control of impedance associated with an output of a plasma source are described. One of the systems includes the plasma source that generates a radio frequency (RF) signal. The system further includes a load ...
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WO/2024/087153A1 |
A quality improvement method and apparatus for a semiconductor device, and a high-energy particle beam lithography device. The method comprises: by means of a preset pixel point recognition policy, recognizing, from i-th to j-th layers o...
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WO/2024/087395A1 |
A scanning method of a scanning electron microscope (100), and a scanning electron microscope (100). The scanning electron microscope (100) comprises a first detector (4) and a second detector (5) arranged opposite to each other. The sca...
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WO/2024/091844A1 |
Methods of filling a gap with a dielectric material including using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. A passivation plasma may remove inhibitor species ads...
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WO/2024/091318A1 |
A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the...
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WO/2024/091829A1 |
A method of milling a diagonal cut in a region of a sample, the method comprising: positioning the sample in a processing chamber having a charged particle beam column; moving the region of the sample under a field of view of the charged...
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WO/2024/091528A1 |
Embodiments of process kits for use in a substrate process chamber are provided herein. A process kit for a substrate process chamber including: a cover ring configured to extend over unprotected dicing tape of a tape frame substrate dur...
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WO/2024/091319A1 |
A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and af...
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WO/2024/088719A1 |
The invention provides an apparatus for generating a plasma from a process gas, the apparatus comprising: a) a power supply b) a hollow cathode arc tube comprising: i) an inert gas inlet ii) a cathode tube connected to the power supply a...
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WO/2024/088718A1 |
An electron-optical projection device for projecting a plurality of charged particle beams towards a sample, the device comprising: a stack of plates comprising beam directing elements configured to project the plurality of charged parti...
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WO/2024/091408A1 |
A cupped baffle plate for a showerhead of a substrate processing system includes: a baseplate to be disposed in a plenum of the showerhead to receive a fluid from a stem of the showerhead, the baseplate includes holes to receive standoff...
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WO/2024/091337A1 |
An apparatus for limiting the deposition and thermal distortion of an electrode is disclosed. The apparatus includes a fluid source in communication with a cooling channel that is embedded in the electrode. By circulating fluid through t...
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WO/2024/091404A1 |
The present disclosure relates to methods, systems, and apparatus for monitoring temperature at multiple sites within a substrate processing chamber. A system for processing substrates includes: a process chamber comprising a processing ...
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WO/2024/090934A1 |
The present invention provides a substrate processing method. In the substrate processing method according to an embodiment, a substrate is processed by supplying process gas into a chamber, wherein a part of the process gas is excited i...
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WO/2024/091305A1 |
The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing vol...
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WO/2024/091280A1 |
Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber that configured to adjust the timing and characteris...
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WO/2024/085938A1 |
Systems and methods provide a solution for efficiently generating high density plasma for a physical vapor deposition (PVD). The present solution includes a vacuum chamber for a PVD process. The system can include a target located within...
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WO/2024/083068A1 |
Provided in the embodiments of the present disclosure are an objective lens system for a scanning electron microscope, and a scanning focusing method. The objective lens system comprises a magnetic lens, a first deflection apparatus, a d...
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WO/2024/083437A1 |
Described herein is a method for die-to-die (D2D) image alignment using a defect map associated with an image. The method includes accessing a set of images of a substrate, which correspond to different image capture conditions. The loca...
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WO/2024/086606A1 |
Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support in...
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WO/2024/085410A1 |
The present invention relates to a plasma chamber and a wafer etching method using the plasma chamber. The plasma chamber of the present invention comprises: a housing having a reaction space therein in order to etch a wafer through plas...
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WO/2024/083470A1 |
A particle transfer system, including: a particle trap apparatus configured to trap a plurality of particles; and a particle conveyance structure configured to convey the particles in parallel from the particle trap apparatus to a substr...
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WO/2024/085975A1 |
A modular gas pallet assembly is disclosed herein, along with a cleaning unit and chemical mechanical polisher having the same. In one example, the gas pallet assembly includes three outlets and two or less inlets. The gas pallet assembl...
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WO/2024/086323A1 |
Disclosed are systems and methods relating to a vehicle for roadway construction which includes radiation shielding rollers, additional radiation shielding, and a particle source configured to generate a particle beam, a beam scan horn, ...
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WO/2024/085481A1 |
The present embodiment is an impedance adjustment circuit for adjusting impedance by adjusting equivalent capacitance, the impedance adjustment circuit including: a unit leg that changes equivalent capacitance according to connection to ...
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WO/2024/084762A1 |
In order to make it possible to improve the uniformity of plasma within a processing chamber of a plasma processing device, this plasma processing device comprises: a sample chamber 0112 that comprises, in the interior thereof, a sample ...
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WO/2024/084031A1 |
The present invention relates to a method and equipment for transferring an object from a donor substrate (30) towards a target substrate (40), the donor substrate (30) containing the objects that are to be transferred and have dimension...
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WO/2024/080530A1 |
The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to a plasma-resistant glass, an...
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WO/2024/077416A1 |
The present invention relates to a machining control method for a semiconductor device, and a high-energy particle beam lithography device. The machining control method for a semiconductor device comprises: acquiring an integrated circui...
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WO/2024/081473A1 |
Examples are disclosed relate to using an inhibitor with a silicon oxide ALD deposition process to refill recesses in STI regions. One example provides a method of processing a substrate. The method comprises depositing an inhibitor on t...
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WO/2024/081015A1 |
Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and imp...
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WO/2024/081176A1 |
Plasma parameters at a surface of a wafer are determined with a plasma hypermodel based on plasma processing conditions. A post-processing profile can be predicted for the surface of the wafer with a feature-scale profile model. Correlat...
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WO/2024/077586A1 |
The present invention relates to a machining control method for a semiconductor device, and a high-energy particle beam lithography device. The method comprises: by means of a pixel point recognition policy, recognizing, from an i-th lay...
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WO/2024/078912A1 |
A charged particle-optical element for a charged particle-optical module configured to direct charged particles along at least one beam path, the charged particle-optical element comprising: a substrate comprising at least one aperture f...
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WO/2024/081735A1 |
An antenna assembly, comprising: an antenna; a dielectric enclosure surrounding the antenna; and a Faraday shield, disposed around the antenna, and arranged between the antenna and the dielectric enclosure, wherein the Faraday shield com...
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WO/2024/080531A1 |
The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to a plasma-resistant glass, an...
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WO/2024/078910A1 |
A stack of planar elements for a charged particle-optical module configured to project charged particles along a beam path, the stack comprising: a pair of adjoining planar elements arranged across the beam path, wherein one of the plana...
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WO/2024/078821A1 |
A charged particle assessment system comprising: a charged-particle beam apparatus configured to direct a charged particle beam onto a sample so that secondary particles and backscattered particles are generated in response to the charge...
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WO/2024/078063A1 |
A plasma etching apparatus, a dielectric window heating device and a system. In the present invention, a heating element is wrapped by a heat conductor; on one hand, the heat of the heating element can be directly transferred to a dielec...
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WO/2024/078739A1 |
A multi -beam charged particle system and a method of operating a multi-beam charged particle system can provide improved image contrast. The multi-beam charged particle system comprises a filter element or an active array element in a d...
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WO/2024/081816A1 |
Systems and methods for capturing and processing image data captured by an optical microscope, such as an Open Top Light Sheet (OTLS) microscope are disclosed. Image data can be processed by techniques including flat fielding, image dept...
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WO/2024/080532A2 |
The present invention relates to plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and manufacturing methods therefor and, particularly, to plasma-resistant glass, an inner chamber component fo...
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WO/2024/078227A1 |
Provided in the specific embodiments of the present invention are an organosilicon nanometer hydrophobic film layer and a preparation method therefor. The organosilicon nanometer hydrophobic film layer is formed by the plasma polymerizat...
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WO/2024/081087A1 |
A bimetallic faceplate for substrate processing is provided including a plate having a plurality of gas distribution holes and formed of a first metal having a first coefficient of thermal expansion, the plate having at least one groove ...
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WO/2024/074173A1 |
The invention relates to the provision of a suitable interior for a near-atmospheric-pressure operating mode and a vacuum-pressure operating mode of an entrance portion of a material analysis system. The entrance portion comprises a hous...
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WO/2024/076767A1 |
Embodiments of bipolar electrostatic chucks are provided herein. In some embodiments, a bipolar electrostatic chuck includes a ceramic plate; a plurality of electrodes disposed in the ceramic plate, wherein the plurality of electrodes in...
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WO/2024/074314A1 |
A method of calibrating analog-to-digital converters, ADCs, of a charged particle-optical device comprises: providing, for each of the ADCs, image data of charged particles detected from a sample output by the ADC; calculating, for each ...
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WO/2024/076477A1 |
A showerhead for a substrate processing chamber configured to perform bulk deposition includes a faceplate, a backplate, and a faceplate. The faceplate defines a first plenum corresponding to center and middles zones and a second plenum ...
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