Title:
PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/084762
Kind Code:
A1
Abstract:
In order to make it possible to improve the uniformity of plasma within a processing chamber of a plasma processing device, this plasma processing device comprises: a sample chamber 0112 that comprises, in the interior thereof, a sample stage where a substrate 0113 under processing is placed; a magnetic field production means 0116 that produces a magnetic field in the interior of the sample chamber; a microwave power source 0101 that produces microwave power; microwave power conveyance parts 0103, 0106 that convey the microwave power; and a microwave three-dimensional circuit part that supplies the conveyed microwave power to the interior of a processing chamber via a dielectric window, wherein the microwave three-dimensional circuit part is configured comprising a branch circuit 0202 that causes the microwave power which was conveyed by the microwave power conveyance parts to branch in a plurality of azimuth angle directions, a ring resonator 0201 that causes the microwave power, which the branch circuit has caused to branch in the plurality of azimuth angle directions, to resonate, and a coaxial passage part 0110 that supplies the microwave power, which the ring resonator has cause to resonate, into the interior of the processing chamber via the dielectric window.
Inventors:
TAMURA HITOSHI (JP)
IKEDA NORIHIKO (JP)
IKEDA NORIHIKO (JP)
Application Number:
PCT/JP2023/026919
Publication Date:
April 25, 2024
Filing Date:
July 24, 2023
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01J37/32; H05H1/46
Foreign References:
| JP2012190899A | 2012-10-04 | |||
| JP7139528B2 | 2022-09-20 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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