Title:
PLASMA CHAMBER AND WAFER ETCHING METHOD USING PLASMA CHAMBER
Document Type and Number:
WIPO Patent Application WO/2024/085410
Kind Code:
A1
Abstract:
The present invention relates to a plasma chamber and a wafer etching method using the plasma chamber. The plasma chamber of the present invention comprises: a housing having a reaction space therein in order to etch a wafer through plasma; a base plate which is provided inside the housing, and which has the wafer mounted thereon; and a pressure adjustment unit for adjusting the pressure inside the housing, wherein the pressure adjustment unit adjusts the pressure inside the housing to 50 to 500 mTorr. The wafer etching method using the plasma chamber, of the present invention, comprises: a pressure adjustment step of adjusting the pressure inside the housing; and a source power adjustment step of adjusting a plasma source.
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Inventors:
KIM NAM HUN (KR)
Application Number:
PCT/KR2023/012525
Publication Date:
April 25, 2024
Filing Date:
August 24, 2023
Export Citation:
Assignee:
NYSEPLASMA CORP (KR)
International Classes:
H01L21/67; H01J37/32; H01L21/3065
Foreign References:
| KR101745686B1 | 2017-06-12 | |||
| KR20200021914A | 2020-03-02 | |||
| KR20060006109A | 2006-01-18 | |||
| KR20170075887A | 2017-07-04 | |||
| KR20070097232A | 2007-10-04 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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