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WO/2024/118120A1 |
A functionally graded abrasive structure with controlled variation in abrasive content in one or more directions ranging from 5% to 60% by volume, together with variation in porosity content ranging from 5% to 50% within the structure, w...
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WO/2024/116448A1 |
The one-side polishing apparatus for a workpiece according to the present invention is further provided with a surface displacement measuring unit capable of measuring displacement of an exposed upper surface, which is a part of the uppe...
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WO/2024/112735A1 |
The disclosure relates to fixed-abrasive grinding plates, fixed-abrasive grinding tools formed therefrom, and related methods. The grinding plate generally has a composite structure with abrasive beads (e.g., beads with diamond abrasives...
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WO/2024/107282A1 |
An apparatus for processing a substrate, the apparatus comprising a polishing assembly and a controller. The polishing assembly is configured to (a) polish a surface of the substrate. The controller is configured to (b) detect a first su...
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WO/2024/106249A1 |
Provided is a polishing composition that is capable of suppressing the generation of an agglomerated powder of abrasive grains, has excellent abrasive grain dispersibility, and is capable of producing a smooth surface having high smoothn...
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WO/2024/106248A1 |
A substrate processing device comprises: a plurality of polishing modules (1A-1D) that are disposed in a polishing level and that polish a substrate; a post-processing lane (2A, 2B) that is disposed in a post-processing level and that pe...
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WO/2024/102293A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) silica abrasive; (b) an amine-based compound, wherein the amine-based compound comprises a carbon to nitrogen ratio of about 1:1 to about 3:1; (c) optiona...
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WO/2024/101242A1 |
Provided is, according to one embodiment, a polishing liquid composition having excellent dispersion stability and capable of both improving polishing speed and reducing post-polishing scratches on the substrate surfaces. The present d...
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WO/2024/098612A1 |
The present invention relates to a method for ameliorating post-epitaxy cracking of a substrate polished wafer, comprising the following steps: step 1, performing rough grinding on peripheral parts and a peripheral OF edge of a chamfer; ...
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WO/2024/102266A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive particle; (b) an ionic oxidizer; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 1 to about 7, the abra...
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WO/2024/094145A1 |
Disclosed in the present invention is an electrochemical mechanical polishing and planarization system for CMP equipment, comprising: power supplies each provided with a first electrode and a second electrode; polishing heads connected t...
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WO/2024/095997A1 |
This polishing device comprises: a polishing table that supports a polishing pad; a polishing head capable of pressing a substrate onto a polishing surface of the polishing pad; and a processor that estimates a polishing index of the pol...
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WO/2024/092170A1 |
A controller of a chemical mechanical polishing system is configured to cause a carrier head to sweep across a polishing pad in accord with a sweep profile. The controller is also configured to select values for a plurality of control pa...
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WO/2024/091314A1 |
A chemical mechanical polishing apparatus has a platen to support a polishing pad, the platen having a recess, a carrier head to hold a surface of a substrate against the polishing pad and comprising a retaining ring to retain the substr...
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WO/2024/084957A1 |
Provided are: a polishing method which can maintain a sufficiently high insulating-film polishing rate and selectivity and can be sufficiently inhibited from causing polishing flaws; and a method for producing a semiconductor component u...
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WO/2024/085217A1 |
This polishing agent composition for a plastic lens contains alumina, a water-soluble polymer compound, and water, wherein the water-soluble polymer compound is an oxazoline group-containing water-soluble polymer compound in which an oxa...
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WO/2024/082358A1 |
The present disclosure relates to the field of semiconductors, and provides a semiconductor structure manufacturing method, and a semiconductor structure. The semiconductor structure manufacturing method comprises: providing a dielectric...
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WO/2024/085218A1 |
This polishing agent composition for a plastic lens contains alumina, polyvinyl alcohol, and water, wherein the degree of saponification of the polyvinyl alcohol is 40-98 mol%, and the degree of polymerization of the polyvinyl alcohol is...
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WO/2024/080189A1 |
Provided is a top ring with which it is possible to improve uniformity of polishing. This top ring for holding a substrate comprises: a base member connected to a rotary shaft; a substrate suctioning member including a porous member ha...
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WO/2024/078567A1 |
Disclosed in the present invention is an eddy-current end-point detection apparatus. The apparatus comprises: a plurality of resonant circuits which are connected in series, wherein each resonant circuit generates a set frequency; a magn...
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WO/2024/081201A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 or less. The invention...
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WO/2024/074631A1 |
The invention relates to a plate grinding/polishing device (10) for surface grinding and/or polishing the sample surface on the lower side of, in particular, embedded and/or non-embedded samples by way of a rotating grinding/polishing pl...
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WO/2024/076421A1 |
A polishing system includes a pressure system, a substrate carrier including a membrane, a first sensor, and a control system. A first compartment of the membrane is fluidly coupled to the pressure system. The first sensor is configured ...
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WO/2024/075546A1 |
Provided is a polishing agent, a polishing method, and a method for manufacturing a semiconductor component that exhibit a good polishing speed in CMP of a surface to be polished, said surface including boron-doped silicon. The polishi...
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WO/2024/070832A1 |
The present invention provides a composition for finish polishing, the composition enabling efficient proceeding of etching, thereby being capable of improving the polishing rate, while maintaining the surface quality after the polishing...
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WO/2024/070831A1 |
The present invention provides a polishing composition that allows etching to proceed efficiently. Provided is a polishing composition containing: silica particles as the abrasive grains; a basic compound; and water. Here, the basic comp...
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WO/2024/073211A1 |
Synthesis of guanidinium-based polymers is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising guanidinium-based polymers; and water. The use of the synthesized ...
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WO/2024/071086A1 |
Provided are a polishing composition, a substrate protection agent, and manufacturing methods therefor, said polishing composition containing a cellulose derivative, and being effective for reducing surface defects after polishing. Provi...
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WO/2024/064259A1 |
A precursor for preparing a chemical mechanical polishing pad includes a prepolymer, a disulfide-containing component, and a curative. The chemical mechanical polishing pad prepared from the precursor includes a disulfide bridge in a pol...
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WO/2024/056315A1 |
The invention relates to an electrolyte medium for electrochemical polishing of metal workpieces, which on the one hand contains a plurality of solid granulate particles and on the other hand contains a liquid electrolyte. According to t...
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WO/2024/057749A1 |
The present invention enables data of interest to be found quickly from among multiple sets of measured data in a polishing device. Provided is a method for displaying measured data relating to a polishing device as a graph. The method...
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WO/2024/053390A1 |
The present invention provides: a polishing agent which is capable of polishing a surface to be polished, the surface containing a resin, highly flat at a high rate; an additive solution for polishing agents; and a polishing method. Th...
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WO/2024/052980A1 |
A work (1) is rotationally symmetric with respect to an axis (L0), and a section of a surface (5) thereof to be polished which is formed by cutting the surface (5) along a virtual plane containing the axis (L0) includes a circular arc (5...
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WO/2024/049890A1 |
A retaining ring for a carrier head of a chemical mechanical polishing system includes an annular outer portion having an annular outer surface and a plurality of flanges projecting radially inward from the annular outer portion. Adjacen...
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WO/2024/049642A1 |
The present disclosure is directed towards polishing modules for performing chemical mechanical polishing of a substrate. The substrate may be a semiconductor substrate. The polishing modules described have a plurality of pads, such as p...
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WO/2024/048271A1 |
Provided are: a composition for chemical mechanical polishing; and a polishing method using the same. The composition allows rapid polishing of a polishing surface that contains a silver material for wiring, and makes it possible to obta...
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WO/2024/049562A1 |
The present disclosure generally relates to methods and system used to collect waste fluids. A system controller is disclosed to control the operation of at least a portion of the system. The controller has a CPU. The fabrication facilit...
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WO/2024/043061A1 |
Provided is a polishing composition capable of achieving high HLM rim protrusion resolving ability while maintaining a polishing rate. Also provided is a polishing composition for preliminarily polishing the surface of a silicon material...
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WO/2024/041159A1 |
An ultrasonic thinning device for a wafer, comprising an adsorption unit and a grinding unit. The adsorption unit comprises vacuum suction cups (20) each having a cup body (201); air flow channels (202) and adsorption holes (203) are eve...
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WO/2024/036983A1 |
A polishing pad (2), comprising a polishing layer (20). The polishing layer (20) comprises a polyurethane substrate, and the polyurethane substrate is obtained by reacting a polyfunctional isocyanate, a polyol composition and a polyamine...
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WO/2024/036569A1 |
A polishing system (100), a fluid reuse system (500) and a method of polishing a substrate. The polishing system comprises a catch basin (200), a vacuum device (400), and a polishing fluid recycling module (501) for recycling polishing f...
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WO/2024/039407A1 |
Embodiments of the present disclosure provide a multiple disk pad conditioner and methods of using the multiple disk pad conditioner during a chemical mechanical polishing (CMP) process. The multiple disk pad conditioner has a plurality ...
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WO/2024/033205A1 |
The invention relates to a device and a method for pressing an upper polishing cloth against an upper polishing plate of a machine for simultaneously polishing a front side and a rear side of a semiconductor wafer between the upper polis...
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WO/2024/034618A1 |
The present invention provides a polishing liquid which contains: abrasive grains; an ether compound which has at least one group that is selected from the group consisting of a carboxy group and a carboxylate group; and water. The prese...
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WO/2024/030291A1 |
A chemical mechanical polishing apparatus has a heating system, a purge gas source, a purge liquid source, and a controller. The heating system includes a source of heated gas, an arm extending over a platen, and a manifold in the arm wi...
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WO/2024/029236A1 |
[Problem] To provide an information processing device that makes it possible to appropriately predict reliability information of a polishing end-point detection function, the reliability information indicating the reliability of an end-p...
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WO/2024/029457A1 |
Provided is a polishing composition containing a water-soluble polymer, the polishing composition being capable of achieving a high-quality surface without compromising polishing rate. The polishing composition comprises: silica particle...
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WO/2024/025797A1 |
A composition includes at least one pH adjuster, at least one chelating agent, at least one anionic surfactant, at least one nitrogen containing heterocycle, at least one alkylamine compound, and an aqueous solvent, wherein the compositi...
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WO/2024/025792A1 |
Exemplary polishing methods for chemical mechanical polishing may include engaging a substrate with a membrane of a substrate carrier. The methods may include chucking the substrate against a substantially planar surface defined by the s...
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WO/2024/024178A1 |
This management device 20 comprises a control unit 22 that manages a plurality of wafer processing devices 1. The control unit 22 selects a wafer processing device 1 to be assigned to processing of a prescribed type of wafer from among t...
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