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WO/2024/045328A1 |
The present disclosure relates to a semiconductor structure and a method for forming same. The semiconductor structure comprises: a substrate; and a stack structure located on the substrate, wherein the stack structure comprises a plural...
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WO/2024/045210A1 |
The embodiments of the present disclosure relate to the technical field of semiconductors. At present, as the size of storage units becomes increasingly smaller, the length of gate trenches is reduced accordingly, resulting in the contro...
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WO/2024/047423A1 |
A semiconductor structure includes a first field-effect transistor having a first back side source/drain contact, a second back side source/drain contact, and a first power line and a first signal line each connected to the first back si...
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WO/2024/047488A1 |
Provided is a semiconductor device that occupies a small area. The semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first conductive layer, a second conductive layer,...
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WO/2024/046738A1 |
A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the b...
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WO/2024/048764A1 |
[Problem] To provide: a crystal having excellent crystallinity; a layered structure; and an element, an electronic device, an electronic apparatus, and a system that use the crystal and the layered structure. [Solution] This layered stru...
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WO/2024/047486A1 |
Provided is a storage device which allows for miniaturization and high integration. The present invention comprises: a first insulator on a substrate; an oxide semiconductor covering the first insulator; a first conductor and a second co...
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WO/2024/045345A1 |
The present application provides a semiconductor device and an electronic device. A through hole is formed on a first active layer by arranging an insulating layer. A thin film transistor layer further comprises a third active layer whic...
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WO/2024/048765A1 |
[Problem] The present invention provides: a crystal which has excellent crystallinity; a multilayer structure; and an element, an electronic device, an electronic apparatus and a system, each of which uses the crystal and the multilayer ...
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WO/2024/045860A1 |
The present application provides a thin film transistor and an electronic device using same. An active layer in the thin film transistor comprises a first active layer, a channel layer and a second active layer which are stacked; the fir...
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WO/2024/050158A1 |
A transistor and method of fabricating the same comprising a channel layer; an epitaxial barrier layer on the channel layer; an epitaxial cap layer on the epitaxial barrier layer; a dielectric layer on the epitaxial cap layer having an o...
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WO/2024/048766A1 |
[Problem] To provide a crystal having excellent crystallinity, a multilayer structure, and an element, an electronic device, an electronic appliance, and a system which are obtained using these. [Solution] An electroconductive crystal wh...
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WO/2024/046026A1 |
Embodiments of the present application provide a semiconductor prepration method and apparatus, and a semiconductor device. The present application relates to the technical field of semiconductor manufacturing. The method comprises: dete...
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WO/2024/045019A1 |
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first conductive layer, a second conductive layer, and a gate electrode. The second nitride-based semi...
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WO/2024/045113A1 |
A method includes assigning a respective initial credit value to each LUN of a block stripe; performing an erase operation across the block stripe; reducing, in response to the erase operation, each respective initial credit value by a u...
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WO/2024/047500A1 |
Provided is a storage device which can be micro-fabricated or highly integrated. This storage device has a memory cell on a first transistor including silicon in a semiconductor layer. The memory cell has a capacitance element and a seco...
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WO/2024/047353A1 |
A Novel Transistor Device There is described a vertical transistor having a collector and emitter regions of a first type of semiconductor and base region that includes a sub-region of semiconductor of a second type and a channel of the ...
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WO/2024/043676A1 |
The present invention relates to a method for manufacturing a group 3 nitride semiconductor template and a semiconductor template manufactured thereby, wherein a laser lift-off technique and a chemical lift-off technique are used so that...
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WO/2024/040516A1 |
The present disclosure provides a nitride-based electronic device with wafer-level dynamic on-resistance monitoring capability which can be integrated into an integrated circuit chip. The nitride-based electronic device comprises: a cont...
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WO/2024/043221A1 |
This photosensitive surface treatment agent contains a compound represented by formula (M1). (In formula (M1), R1 represents a hydrogen atom, a tert-butoxycarbonyl group, or an ester-based protecting group, R2 represents a hydrogen atom ...
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WO/2024/040880A1 |
The present application provides a composite silicon carbide substrate and a preparation method therefor. The composite silicon carbide substrate comprises a single crystal layer, a bonding layer and a supporting layer stacked in sequenc...
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WO/2024/041867A1 |
A semiconductor device includes a first vertical field-effect transistor comprising a first set of vertical fins and a second set of vertical fins separated by a first isolation pillar structure. The semiconductor device further includes...
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WO/2024/042997A1 |
An oxide semiconductor film according to the present invention has a polycrystalline structure and is provided on a substrate; the crystal structure of the oxide semiconductor film is a bixbyite structure; and with respect to the out-of-...
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WO/2024/042777A1 |
Provided is a group-III element nitride substrate that is capable of having an improved yield. A method for inspecting a group-III element nitride substrate according to an embodiment of the present invention comprises: preparing a group...
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WO/2024/040515A1 |
A method for manufacturing a nitride-based semiconductor device is provided. The method includes steps as follows. An epitaxy structure is formed on a silicon-based substrate. An oxide structure is formed on the epitaxy structure. A mask...
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WO/2024/040883A1 |
The embodiments of the present disclosure relate to the field of semiconductors. Provided are a semiconductor structure and a manufacturing method therefor. The structure comprises: a substrate, which comprises a first active area and a ...
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WO/2024/043234A1 |
A majority-decision logic device 1 comprises a non-magnetic semiconductor layer 10 made of a material that, when irradiated with light having at least two kinds of mutually different polarization states, generates electron spin waves hav...
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WO/2024/041122A1 |
Provided in the present disclosure are a high-electron-mobility transistor and a preparation method therefor. The high-electron-mobility transistor comprises a substrate, an epitaxial layer, a source electrode, a drain electrode, a gate ...
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WO/2024/040698A1 |
Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure manufacturing method and a semiconductor structure. The semiconductor structure manufacturing method comprises: providing ...
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WO/2024/042419A1 |
Provided is a storage device which can be micro-fabricated or highly integrated. This storage device comprises a memory cell and a first insulator. The memory cell comprises a capacitive element and a transistor disposed on the capacitiv...
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WO/2024/041431A1 |
Provided in the present application are an integrated device, an electronic device, and a method for manufacturing an integrated device. The integrated device comprises a substrate, the substrate comprising a first substrate and a second...
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WO/2024/041626A1 |
Disclosed in the present application are a gate structure, a semiconductor device, and a method for preparing a semiconductor device. The gate structure comprises a gate portion and a field plate portion, wherein the field plate portion ...
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WO/2024/042602A1 |
This quantum device includes: a first surface; a waveguide extending in a first direction parallel to the first surface; a plurality of nano-pillars connected to the first surface and arranged in the first direction; colour centres respe...
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WO/2024/040645A1 |
The embodiments of the present disclosure provide a semiconductor structure and a manufacturing method therefor, and a memory. The semiconductor structure comprises: a substrate; active pillars, which are located on a surface of the subs...
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WO/2024/040622A1 |
The embodiments of the present disclosure disclose a semiconductor structure. The semiconductor structure comprises: a substrate, and an isolation structure located in the substrate, wherein the isolation structure defines an active regi...
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WO/2024/042404A1 |
Provided is a novel semiconductor device. A vertical channel transistor is provided overlapping a capacitive element. A ferroelectric body is used as a dielectric layer of the capacitive element. It is preferable that the ferroelectric b...
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WO/2024/041860A1 |
Techniques for co-integrating gate-all-around nanosheet devices having bottom dielectric isolation with an ideal vertical P-N-P diode on a common substrate are provided. In one aspect, a semiconductor structure includes: a diode in a fir...
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WO/2024/040463A1 |
A semiconductor device includes a first and a second nitride-based semiconductor layers, a first passivation layer, a gate electrode, and a first field plate. The first passivation layer has a first portion with at least one thickness mo...
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WO/2024/042408A1 |
Provided is a semiconductor having a small occupied area. This semiconductor device has a first conductive layer, a second conductive layer on the first conductive layer, a first insulating layer on the second conductive layer, a semicon...
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WO/2024/042809A1 |
A chip-scale package semiconductor device (1) which can be mounted face-down comprises a semiconductor substrate (32), a semiconductor layer (40) formed on the semiconductor substrate (32), a vertical field effect transistor (10) formed ...
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WO/2024/040465A1 |
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a doped nitride-based semiconductor layer, and a gate electrode. The doped nitride-based semiconductor l...
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WO/2024/042814A1 |
This field effect transistor suppresses the dielectric breakdown of a gate insulating film when a current diffusion n-layer is provided. The field effect transistor includes: a semiconductor substrate having a trench in the upper face th...
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WO/2024/041311A1 |
Provided are a display panel and display apparatus, which belong to the technical field of display. The display panel comprises a base substrate, a plurality of first pixels and a plurality of second pixels. The base substrate has a spec...
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WO/2024/040600A1 |
A semiconductor device includes a first and a second nitride-based semiconductor layers, a drain, a source electrodes, a gate electrode, a plurality of field plates, a conductive layer, and at least one contact via. The field plates are ...
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WO/2024/043001A1 |
A semiconductor device including a semiconductor substrate having a first surface on which a first electrode is disposed, a first semiconductor region, of a first conductivity type, disposed on a second surface of the semiconductor subst...
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WO/2024/040513A1 |
A semiconductor device includes a substrate, a plurality of epitaxy structures, a protection layer, and a dielectric layer. The substrate includes a plurality of first regions and a second region having at least one groove surrounding ea...
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WO/2024/041861A1 |
Backside and frontside contact structures wrapping around source/drain regions provide increased contact areas for electrical connections and allow increased silicide areas. Sidewall metallization of epitaxially grown source/drain region...
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WO/2024/040843A1 |
The present application provides a display panel (100) and a drivr substrate (1) thereof. The drive substrate (1) is used for driving an inorganic light-emitting diode to emit light. The drive substrate (1) comprises a substrate (11) as ...
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WO/2024/041001A1 |
The present invention provides a high-voltage power semiconductor device and a manufacturing method therefor. A plurality of second resistive field plate structures extending through an epitaxial layer to a substrate in a first direction...
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WO/2024/037873A1 |
Backside contacts wrapping around source/drain regions provide increased contact areas for electrical connections between field-effect transistors and metallization layers. Cavities formed within a device layer expose sidewalls of select...
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