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WO/2024/090143A1 |
According to the present invention, sufficient interfacial strength is ensured in a solder joint portion even after undergoing a high-temperature process, such as reflow junction, and the like. This device has a base, an electrode contai...
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WO/2024/091104A1 |
Provided are cerium oxide particles for chemical-mechanical polishing and a chemical-mechanical polishing slurry composition comprising same. By combining the cerium oxide particles that are characteristic of the present invention with a...
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WO/2024/090273A1 |
This film formation method comprises the following (A) to (D): (A) a substrate is prepared, which has, in different regions of the surface thereof, a first film and a second film formed from a different material than the first film; (B) ...
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WO/2024/091405A1 |
Embodiments of the present disclosure relates to methods, systems, and apparatus for monitoring radiation output of lamps of processing chambers. In some embodiments, a system contains a plurality of lamps coupled to a chamber, and one o...
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WO/2024/090428A1 |
Provided are an information processing method, a computer program, and an information processing device that can be expected to effectively utilize data obtained from a substrate processing device. With an information processing method...
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WO/2024/091414A1 |
Gate-all-around transistor devices and methods for manufacturing the same are provided. The semiconductor device includes a substrate. The substrate includes a plurality of isolation regions formed in the substrate, the plurality of isol...
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WO/2024/092072A1 |
The disclosed integrated circuit for offset cross field effect transistors can include a first transistor include a first channel oriented in a first direction; an oxide layer adjacent to the first transistor; and a second transistor adj...
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WO/2024/087514A1 |
A semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises a substrate (100), a gate structure (200) and a channel region (300), wherein the substrate (100) comprises a gate trench (110). The cha...
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WO/2024/091103A1 |
Provided are cerium oxide particles for chemical-mechanical polishing and a chemical-mechanical polishing slurry composition comprising same. By combining the cerium oxide particles that are characteristics of the present invention with ...
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WO/2024/090082A1 |
In the present invention, on the basis of the inclination of a peripheral portion relative to a central portion of a substrate that is acquired in advance, parameters of a pressing force and a movement speed are adjusted in accordance wi...
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WO/2024/091261A1 |
Examples of a substrate support assembly are provided herein. In some examples, the substrate support assembly has a ceramic electrostatic chuck having a first side configured to support a substrate and a second side opposite the first s...
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WO/2024/089907A1 |
This substrate processing device comprises: a transfer unit that transfers a chip that is adhered to a tape that covers an opening of a frame from the tape to a conveyor plate; a first cleaning unit that cleans a surface of the chip, in ...
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WO/2024/091323A1 |
Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and i...
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WO/2024/091100A1 |
Provided are cerium oxide particles for chemical mechanical polishing and a chemical mechanical polishing slurry composition comprising same. A combination of the characteristic cerium oxide particles of the present invention with a dish...
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WO/2024/091470A1 |
Methods for forming an EUV photoresist hard mask are provided. The method includes treating a metal-rich layer on a substrate with a reductive plasma to form a metallic surface on the metal-rich layer, the metal-rich layer having a top p...
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WO/2024/087153A1 |
A quality improvement method and apparatus for a semiconductor device, and a high-energy particle beam lithography device. The method comprises: by means of a preset pixel point recognition policy, recognizing, from i-th to j-th layers o...
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WO/2024/091612A1 |
A method for forming an aperture pattern in a substrate, the substrate including a film disposed thereon and a patterned mask layer disposed on the film, comprises 1 ) exposing the substrate to a vapor of a passivation molecule in a non-...
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WO/2024/091431A1 |
A cassette support system is disclosed and includes in one embodiment, a pedestal assembly, with a shaft, a plurality of arms coupled to the shaft and extending radially from the shaft, wherein at least two radially adjacent arms include...
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WO/2024/091618A1 |
A method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer without forming the passivation layer on a surface of the second layer by exposing the first layer and...
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WO/2024/089963A1 |
The present invention provides a method for filling up a trench, which is formed in a silicon substrate and has a small opening width and a large aspect ratio, by means of high-rate epitaxial growth, while preventing closing of the openi...
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WO/2024/089919A1 |
This method selects a raw material for obtaining abrasive grains, wherein the raw material includes cerium, and the raw material is selected on the basis of an average value of the positron lifetime measured by positron annihilation spec...
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WO/2024/091415A1 |
In one implementation, a method of monitoring film thickness on a substrate, comprises: generating light from a light source; collimating the light from the light source to form a collimated beam; reflecting the collimated beam off of a ...
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WO/2024/087461A1 |
An anti-fuse structure and a method for forming same, and a memory. The anti-fuse structure comprises a substrate (1), a first dielectric layer (21), a second dielectric layer (22), a first groove (201), a second groove (202), a first di...
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WO/2024/091647A1 |
The present disclosure relates to a system for inspecting devices, such as semiconductor devices, or units under test (UUTs). The system may include a transport media transport system that adjusts to accept transport media of different s...
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WO/2024/090945A1 |
An electrode formation method according to an embodiment of the present invention may include: a step of preparing a substrate; a step of forming a method thin film layer by spraying a precursor including ruthenium (Ru) on the substrate;...
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WO/2024/091178A1 |
Various embodiments may relate to a method of forming a semiconductor structure. The method may include forming a plurality of openings in a substrate. The plurality of openings may extend from a surface of the substrate into the substra...
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WO/2024/087174A1 |
The embodiments of the present disclosure provide a thin film transistor device and a manufacturing method therefor, a compound etching solution, and an array substrate. The method comprises: forming an active structure material layer co...
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WO/2024/089923A1 |
Provided is a selection method for a raw material for obtaining abrasive grains, wherein the raw material contains cerium, and the raw material is selected on the basis of a peak top temperature in a differential curve of a thermogravime...
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WO/2024/087254A1 |
A method and apparatus for quickly removing particles by using an organic thin film. The method comprises: S1, coating an organic solution on the surface of a material substrate containing particles to be removed, wherein the organic sol...
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WO/2024/088040A1 |
Provided in the present application are a wafer-level packaging structure (100) and a manufacturing method therefor, and an electronic device. The wafer-level packaging structure (100) comprises a substrate layer (10), a wall film (20) a...
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WO/2024/091914A1 |
An apparatus, system and method for a substrate flipper capable of accommodating substrates of varying sizes. The apparatus, system and method may include a base housing providing a rotating feature extending outwardly from the base hous...
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WO/2024/088555A1 |
The disclosure relates to a semiconductor package (100) comprising: an integrated circuit (140) comprising at least one first connection terminal (141) and at least one second connection terminal (143); an encapsulant (150) encapsulating...
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WO/2024/089570A1 |
Provided is a new semiconductor device. This semiconductor device has: a memory cell circuit having a first transistor and a capacitive element; and a read-out circuit having a second transistor and a third transistor. An element layer i...
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WO/2024/090475A1 |
This substrate treatment device (100) comprises a chamber (201), a fan mechanism (3), a substrate holding unit (4), a substrate rotating unit (5), a first liquid mixture discharging unit (6), and a first super-heated steam blowing unit (...
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WO/2024/087955A1 |
A semiconductor device and a manufacturing method therefor, the semiconductor device comprising: a substrate (1); a semiconductor layer (2) provided on the substrate (1) and comprising a first semiconductor lamination layer and a second ...
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WO/2024/087109A1 |
An array substrate, a display panel, a display device, and a manufacturing method for an array substrate. The array substrate comprises: a base substrate (10); a plurality of data signal lines (20) provided on the base substrate (10); a ...
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WO/2024/091102A1 |
Provided are cerium oxide particles for chemical-mechanical polishing and a slurry composition for chemical-mechanical polishing comprising same. By means of a combination of cerium oxide particles, the characteristic of the present inve...
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WO/2024/087541A1 |
Disclosed in embodiments of the present disclosure are a manufacturing method for a semiconductor structure, a semiconductor structure, and a memory. The method comprises: providing a substrate, a metal layer and a sacrificial layer bein...
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WO/2024/088332A1 |
The present application relates to the technical field of communication devices, and discloses a chip assembly, an electronic device, and a manufacturing method for a chip assembly. The chip assembly comprises a wiring layer, a chip, at ...
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WO/2024/091395A1 |
Implementations of the present disclosure relate to apparatus, systems, and methods of using a transfer chamber. In one or more implementations, gaseous impurities are reduced in a transfer chamber. In one implementation, a method includ...
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WO/2024/087905A1 |
The present application relates to the technical field of printing. Provided are a laser transfer printing method and device, and a solar cell. The laser transfer printing method comprises: providing a transfer printing medium, and arran...
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WO/2024/091543A1 |
A molybdenum silicide layer is formed on a bottom surface in a recessed feature in a silicon or silicon-germanium substrate. The bottom surface may be a silicon or silicon-germanium. A first molybdenum layer may be deposited on or over t...
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WO/2024/087199A1 |
A display substrate and a display apparatus, which relate to the technical field of display. The display substrate comprises a plurality of display units separated from each other, and a plurality of connecting units. Each of the connect...
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WO/2024/091413A1 |
Methods for selectively depositing an epitaxial layer are provided. In some implementations, the selective epitaxial deposition process includes providing the co-flow of chlorosilane precursors with at least one of an antimony-containing...
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WO/2024/087189A1 |
Disclosed in the present application are an anti-radiation field effect transistor device and application thereof in an anti-radiation environment, which are used for solving the problem in the prior art of an anti-radiation method for a...
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WO/2024/091302A1 |
A semiconductor structure includes a stack of alternating doped semiconductor epitaxial layers and cap epitaxial layers formed on a substrate. Each doped semiconductor epitaxial layer includes silicon having carrier dopants, and each cap...
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WO/2024/091304A1 |
An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. Th...
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WO/2024/090384A1 |
Provided is a technology by which a chemical can be effectively fixed to the surface of a substrate. A substrate treatment device 1 comprises: an activating device 40 configured so that, in a state where a liquid is supplied to a surfa...
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WO/2024/087780A1 |
Disclosed in the embodiments of the present disclosure are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate, which comprises a core region and a stepped region; at least on...
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WO/2024/087373A1 |
A bonding structure and a manufacturing method therefor. The bonding structure comprises a first structural portion and a second structural portion. The first structural portion comprises a first base portion and a first connecting porti...
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