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JP2024502752A |
Additive manufacturing using powder bed fusion bonding A powder bed fusion bonding apparatus configured to irradiate a powder bed using a charged particle beam, the apparatus comprising neutralizing particles of opposite charge to the ch...
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JP7414602B2 |
There is provided an ion generation device including a plasma generation chamber that generates a plasma for extracting an ion, and a heating device configured to heat the plasma generation chamber by irradiating a member that defines th...
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JP7412074B2 |
The present invention provides a negative ion irradiation device and a control method of the negative ion irradiation device that can improve the manufacturing efficiency and the quality of a compound semiconductor. A control unit (50) c...
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JP2024500329A |
The ion source includes a first end, a second end opposite the first end, a first wall extending from the first end to the second end, and a first wall extending from the first end to the second end. and a second wall opposite the first ...
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JP7404119B2 |
An apparatus for producing negative ions capable of suppressing damage to an object is provided. The apparatus for producing negative ions (1) comprises an ultraviolet light suppression device (60) for suppressing ultraviolet light (UV) ...
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JP7404134B2 |
To produce a large amount of multivalent ions using a PIG ion source device.An ion source device 1 (PIG ion source device) includes a cold cathode type PIG ion source 2, and a control unit 5 that changes at least one of the gas pressure ...
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JP7030696B6 |
Approaches herein increase a ratio of reactive ions to a neutral species in a plasma processing apparatus. Exemplary approaches include providing a processing apparatus having a plasma source chamber including a first gas inlet, and a de...
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JP7395761B2 |
A filter (104a, 104b, 108) for a cathode arc source comprises: a filter duct having at least one bend (104a, 104b), and a first magnetic field source for steering plasma through the filter duct for removal of macroparticles from the plas...
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JP2023172015A |
To provide a vaporizer capable of reducing the waiting time on switching ionic species compared to conventional ones.A vaporizer 1 includes a solid material 16 containing aluminum, a crucible 2 having a gas inlet 2b into which fluorine-c...
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JP2023550482A |
An ion source assembly for use in a mass spectrometer includes a first anode that defines a first ionization volume, and a first ionization volume that is disposed proximate the first anode and that passes through the first anode to gene...
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JP7389954B2 |
To provide an operation method of an ion beam irradiation device, which can shorten a start-up time of the ion beam irradiation device, and can extend the life of the ion source by simplifying a configuration.An operation method of an io...
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JP2023169465A |
To provide high efficiency electron sources, plasma sources, and switching devices.According to one embodiment, an electron source includes a base body and a first cathode layer. The first cathode layer includes a first diamond layer inc...
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JP7383486B2 |
An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation...
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JP7382877B2 |
To provide a negative ion generating device capable of irradiating a target object with negative ions by a new method.A negative ion generating device 1 includes a radical source 4 for generating radicals in a chamber 2. Therefore, the r...
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JP2023548015A |
Ion implantation systems, ion sources, and methods having gaseous aluminum-based ion source materials are provided. The gaseous aluminum-based ion source material may be or contain dimethylaluminum chloride (DMAC). DMAC is a liquid that ...
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JP2023547815A |
Ion implantation systems, ion sources, and methods are provided. The ion source is configured to ionize an aluminum-based ion source material to form an ion beam and a byproduct including a non-conductive material. The etchant gas mixtur...
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JP2023161580A |
To provide practical implementation of particle-induced X-ray emission (PIXE) for a focused ion beam device or for a dual beam device having both a focused ion beam and a scanning microscope function.An analytical method includes the ste...
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JP7371213B2 |
An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic em...
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JP2023544172A |
Ion implantation devices, systems, and methods are described, and in particular, ion sources useful for producing aluminum ion beams are described. [Selection diagram] Figure 1
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JP2023154377A |
To provide a new vaporizer capable of solving the problem of insulation of an extraction electrode without using hydrogen gas.A vaporizer 1 includes a crucible 2 in which an aluminum-containing solid material 7 is placed, and a heater 5 ...
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JP7361092B2 |
The invention relates to a low-erosion radio frequency ion source, comprising:- A hollow body (11) with conductive interior walls that define a cylindrical cavity (13), with a gas supply inlet (14) for plasma-forming gases and a power su...
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JP2023140709A |
To provide a negative ion irradiation device which can irradiate a granular material with negative ions.A negative ion irradiation device 1 includes: a plasma gun 14 which generates plasma; and a chamber 2 which has a space which can sup...
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JP2023137423A |
To provide an ion source and an accelerator, which can be miniaturized.In an ion source 11, a wiring part 33 from a power source 31 is connected to a negative electrode 13A on a lower end 12a side, and a wiring part from the power source...
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JP7350779B2 |
A terminal system for an ion implantation system has an ion source with a housing and extraction electrode assembly having one or more aperture plates. A gas box is electrically coupled to the ion source. A gas source is within the gas b...
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JP2023127907A |
To improve workability during gap adjustment between a filament and a cathode.A cathode support includes: a cylindrical or rod-like cathode holder 1 supporting a cathode 6 at one end and having a flange 2 at the other end; and clamps 3, ...
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JP2023124873A |
To provide a high power ion beam generator system and method.Provided herein are a high energy ion beam generator system and a method that provide low cost, high performance, robust, consistent, uniform, low gas consumption and high curr...
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JP7336863B2 |
To provide a negative ion generating apparatus in which a member constituting a plasma guide portion for guiding plasma can be protected.In a negative ion generating apparatus 1, a gas supply unit 12 supplies gas as a raw material for ne...
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JP2023537391A |
Embodiments of systems, devices, and methods relate to initiating beam transport for accelerator systems. An exemplary method includes increasing a bias voltage of one or more electrodes of an accelerator system to a first voltage level ...
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JP2023120230A |
To provide a high power ion beam generator system and method.Provided herein are a high energy ion beam generator system and a method that provide low cost, high performance, robust, consistent, uniform, low gas consumption and high curr...
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JP2023120247A |
To provide a negative ion generator which allows a member forming part of a plasma induction part for inducing plasma to be protected.A negative ion generator 1 comprises: a gas supply part 12 operable to supply a gas to be used as a mat...
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JP2023119144A |
To provide a negative ion source and a negative ion generation method that can achieve high negative ion generation efficiency.A housing 108 includes: an introduction port 106 that introduces a sample; a plasma generation region 113 that...
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JP7329833B2 |
To provide a laser ablation ion source for a beam accelerator, and more specifically provides a long life ion source that can be used for a long time and is maintenance-free for a long time, which is suitable for medical use (for example...
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JP7325723B2 |
To stably raise and lower an ion source, and improve the workability of work of attaching and detaching the ion source to and from a device main body.An ion source mover 10 can move an ion source 20 having a chamber 21 fixed to face a de...
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JP2023534240A |
a plasma chamber; a plasma plate juxtaposed with the plasma chamber and defining a first extraction aperture; a beam shield disposed within the plasma chamber and facing the extraction aperture; An ion beam processing system is provided ...
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JP7319865B2 |
To provide a cathode in which particles are hardly generated from a cathode repeller and which is long in life and can be used stably.A cathode is used for an ion source that extracts an ion beam using gas. A cathode constituting the ion...
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JP2023532907A |
The ion implantation system has an aluminum trichloride source material. An ion source ionizes the aluminum trichloride source material to form an ion beam. Ionization of the aluminum trichloride source material further forms by-products...
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JP2023105381A |
To provide an ion source capable of suppressing short-circuiting of a cooling pipe with a surrounding structure.An ion source 1 comprises an electrode 20 including a movable member (a second electrode 22). Therefore, the ion source 1 is ...
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JP7314408B2 |
An ion source having a thermally isolated repeller is disclosed. The repeller comprises a repeller disk and a plurality of spokes originating at the back surface of the repeller disk and terminating in a post. In certain embodiments, the...
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JP7313422B2 |
A foil liner comprising a plurality of foil layers is disclosed. The foil layers may each be an electrically conductive material that are stacked on top of each other. The spacing between adjacent foil layers may create a thermal gradien...
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JP2023531519A |
Embodiments of systems, devices, and methods relate to ion beam source systems. The ion source is configured to provide a negative ion beam to a tandem accelerator system downstream of the ion source, and a modulator system connected to ...
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JP2023101120A |
To provide an ion milling source, a vacuum processor, and a method for vacuum processing which have an excellent resistance to fluorine as well when using fluorine-based gas as a processing gas.The ion milling source includes a vacuum co...
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JP7312316B2 |
An apparatus for directional processing is disclosed. The apparatus includes a workpiece support and an ion source, having a plurality of walls. An extraction aperture is disposed on at least one of the plurality of walls. In certain emb...
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JP2023530881A |
An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity and a cathode shield has a cathode shield surface at least partially surrounding the c...
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JP7311038B2 |
An ion analyzer 1 including: a first member 16 fixed to an ion outflow port and provided with a fixing pin 1621 on one side and a pin hole 1631 on the other side sandwiching the ion outflow port; a second member 12 to be fixed to the fir...
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JP7303918B2 |
An extraction set including an extraction plate, a blocker and the holding mechanism for the blocker is disclosed. The extraction set includes an extraction plate that may be constructed of titanium coated with a ceramic material. The ex...
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JP7300197B2 |
An ion source according to the present invention comprises: an electron source (101); an anode electrode (102) and a cathode electrode (103) for extracting a hollow electron beam (EB) from the electron source (101); a drift tube (105) su...
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JP2023526406A |
An ion source baffle (1), an ion etching apparatus and a method for using the same, wherein the ion source baffle (1) includes a baffle body (11) of hollow structure, and the inner wall of the baffle body (11) is provided symmetrically. ...
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JP2023526404A |
The present invention includes a discharge chamber, a coil support, an upper insulating fixed block, a discharge member, and an ion source chamber, wherein the discharge member includes an RF coil, a lower conductive connection, and an u...
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JP2023081884A |
To provide a device in which a plasma source may include a plasma chamber including a first plane defining a first plane, and an extraction assembly including at least two electrodes and positioned adjacent to this face of the plasma cha...
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JP7286420B2 |
To provide an ion implanter capable of increasing a radiation amount of ions.In an ion implanter, a current of an ion beam is detected by a first detector 41 crossing the flight range of ions between an extraction electrode 22 and a mass...
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